Positive PR Stripper - MOS grade

Cat. No.: P1523746

GRADE & PURITY MOS grade

Storage

Room temperature

Shipped In

Normal

Specifications

Spécifications et pureté

MOS grade

Conditions de stockage de stockage

Room temperature

Expédié en

Normal

Grade

MOS grade

Application Protocols

No product-specific validated application protocols are provided in the product data for SKU P1523746.

For general process guidance on positive photoresist removal, see the Reaction Conditions and Reaction & Applications sections. Always consult the product SDS/CoA and qualify any procedure on test substrates before integrating into a process of record.

Biological Roles

Not applicable. This product is an industrial/laboratory process chemical for microfabrication and materials processing. It is not intended for biological systems.

• No biological pathways, enzymatic roles, or metabolic functions are associated with this product category.
• Research Use Note: For research use only.

If biological compatibility or cytotoxicity data are required for specialized applications (e.g., bio-MEMS processing), they are Not specified for this item; refer to CoA/Spec Sheet and conduct application-specific testing.

Buffer Applications

Not applicable. Positive PR strippers are not used as buffer components. For wet processing context, see:

• Reaction & Applications: process uses in lithography and lift-off.
• Reaction Conditions: general time/temperature/agitation guidance for stripping.

No buffer recipes or pH buffering roles apply to this product.

Green Alternatives

Photoresist strip traditionally relied on high-boiling dipolar aprotic solvents (e.g., NMP). Greener strategies focus on reducing toxicity, improving biodegradability, and facilitating aqueous processing while maintaining performance. The following are general comparisons; they are not specifications for this SKU.

Greener options (literature/general):

• NMP-free, amine-activated blends based on DMSO, propylene carbonate (PC), and/or γ-butyrolactone analogs, sometimes with water co-solvents.
• Aqueous alkaline strippers for specific positive resists and lift-off resists, leveraging water miscibility to simplify waste handling.
• Supercritical CO2 with co-solvents for delicate substrates (specialized equipment required).

Comparison highlights (general):

• Classic NMP systems: strong solvency; regulatory and EHS burdens.
• DMSO/PC-based systems: lower toxicity profile; may require elevated temperature or longer dwell for hardened films.
• Aqueous alkaline blends: best EHS profile; substrate/corrosion constraints; not universal for cross-linked resists.

Trade-offs to consider:

• Strip rate vs. temperature: greener systems may need more time/heat.
• Metal/dielectric compatibility: verify with coupon tests.
• Waste profile: aqueous systems can reduce VOCs but still generate contaminated waste streams requiring treatment.

Selection guidance: If your POR allows, evaluate NMP-free MOS-grade strippers under identical process conditions (time/temperature/agitation) and benchmark strip completeness, corrosion, and residue metrics.

Pharmaceutical Uses

Not applicable. This product is a microfabrication process chemical and is not intended for pharmaceutical formulation or as an excipient.

• No pharmacopeial monograph or excipient status is provided.
• Do not use in clinical, diagnostic, or therapeutic applications. Research use only.

Physical Properties

Item-specific physical constants are not provided.

• Appearance: Not specified for this item; refer to CoA/Spec Sheet.
• Density, refractive index, viscosity: Not specified for this item; refer to CoA/Spec Sheet.
• Boiling point, flash point, vapor pressure: Not specified for this item; refer to CoA/Spec Sheet.
• Solubility: Not specified for this item; refer to CoA/Spec Sheet.

Typical characteristics for positive PR strippers (literature/general, not specifications for this SKU):

• Physical state: liquid; often high-boiling to enable heated bath processing.
• Solvent class: frequently polar aprotic; miscibility with water ranges from partial to complete depending on formulation.
• Typical BP range: many commercial strippers use components with BP > 150–200 °C (literature, general) to minimize evaporative loss during heated processing.
• pH: amine-activated systems are basic; amine-free systems may be near-neutral but strongly solvating (literature, general).
• Substrate compatibility: designed to minimize attack on common metals (Al, Cu, W, Ti/TiN) and oxides; actual compatibility is formulation-specific and process-dependent.

Because the composition and constants for SKU P1523746 are not disclosed here, please use the SDS and CoA for operational limits (temperature, materials compatibility, drying/rinsing behavior) before integrating into a process of record.

Quality and Grades

• Grade: MOS grade (as provided). For semiconductor chemicals, MOS-grade generally denotes stringent control of ionic and particulate contamination compatible with metal–oxide–semiconductor device fabrication.

What MOS grade typically implies (general/industry practice; not item-specific specifications):

• Low total metal ions and alkali content to mitigate threshold voltage shift, leakage, and corrosion risks on Al/Cu interconnects and gate oxides.
• Particle control suitable for lithography/cleanroom handling to avoid pattern defects.
• Process compatibility with common integration stacks (e.g., Si, SiO2, Si3N4, Ti/TiN, W, Cu) when used under recommended conditions.

Important notes for this SKU:

• Specific numeric limits (e.g., metal ppb, particle counts, UV cutoff, water content) are Not specified for this item; refer to CoA/Spec Sheet.
• Stabilizers or inhibitors: Not specified for this item; refer to CoA/Spec Sheet.
• UV absorbance profile (for track/bath monitoring): Not specified for this item; refer to CoA/Spec Sheet.

Recommendation: For process of record (POR) qualification, request a current CoA/SDS lot package including ionic contamination, particles, and non-volatile residue (NVR) if relevant to your fab controls.

Reaction and Applications

Primary use is in microfabrication processes rather than in synthetic chemistry. Key application domains (general/literature):

• Post-lithography photoresist removal: Effective on positive-tone resists following pattern transfer, including post-etch or implant where partial cross-linking has occurred.
• Lift-off processing: Dissolves the sacrificial PR layer beneath deposited metals to release excess film; minimizes metal flake redeposition when coupled with proper agitation and rinsing.
• Post-ash clean assist: After O2 plasma ashing, strippers can remove residual organics and sidewalls.
• Substrate range: Si, SiO2, Si3N4, GaAs, glass; metals such as Al, Cu, W, Ti/TiN—actual compatibility depends on formulation and process parameters.

Mechanistic notes (literature/general):

• Swelling of the polymer matrix followed by dissolution of resin and PAG/deprotection byproducts (for chemically amplified resists).
• Amine-promoted cleavage of acid-labile groups and disruption of cross-links in hardened films, when present in the formulation.

Practical tips (general):

• Pre-wet wafers to reduce pattern collapse risk in high-aspect features.
• Use temperature control to tune strip rate; avoid overheating sensitive stacks.
• Employ filtered recirculating baths or single-wafer dispense to limit particulate redeposition.
• Rinse sequence such as solvent displacement (e.g., IPA) followed by DI water and N2 dry can reduce watermarking.

Reaction Conditions

General process conditions for positive PR stripping (literature/general; not product-validated for this SKU):

• Temperature: 20–80 °C depending on resist bake history and substrate stack. Hardened or post-etch resists typically require 50–70 °C.
• Time: 2–30 minutes typical; extend for thick or cross-linked films.
• Agitation: Magnetic stirring in bath tools, megasonic or mild ultrasonic (observe safety to avoid aerosol exposure), or single-wafer spray/soak cycles.
• Sequence: Pre-wet (optional) → Strip in fresh or filtered bath → Intermediate solvent displacement rinse (e.g., IPA) → Thorough DI water rinse → N2 dry or spin-dry.
• Filtration: 0.2–1.0 µm in recirculating baths to control particulates; periodic bath refresh to limit NVR buildup.
• Materials of construction: Use PTFE, PFA, PVDF, or glass; verify stainless alloys for corrosion resistance with your specific formulation.
• Metal/dielectric care: Validate on Al, Cu, Ti/TiN, W, low-k dielectrics, and porous films; monitor for corrosion, swelling, or delamination.

Process qualification tips:

• Run blanket and patterned wafer coupons; inspect via optical/SEM and perform residue/metrology checks (contact angle, XPS/ToF-SIMS if needed).
• Establish SPC for temperature, dwell time, and bath age; define strip endpoint criteria and cleanliness metrics for your POR.

Always adapt parameters to the exact formulation per SDS/CoA.

Safety and Handling

Hazard details for this specific formulation are not provided in the product data.

• GHS classification, signal word, H-statements, pictograms: Not specified for this item; refer to SDS.

General safety guidance for PR strippers (literature/general):

• Potential hazards: Many PR strippers contain strong organic solvents and/or alkanolamines that can be corrosive/irritating to skin and eyes; some high-boiling solvents (e.g., NMP) may pose reproductive toxicity concerns. Avoid inhalation of mists and prolonged skin contact.
• PPE: chemical-resistant gloves (e.g., butyl rubber, laminate; verify compatibility), lab coat, splash goggles/face shield. Use in a fume hood or exhausted wet bench.
• Incompatibilities: Strong oxidizers; acids/bases depending on formulation; reactive metals (e.g., alkali metals). Some formulations may attack certain plastics and elastomers—use glass, PTFE, PFA, or compatible metals per SDS.
• Process precautions: Heated baths increase vapor exposure; implement local exhaust and temperature controls. Avoid aerosolization/ultrasonic mist exposure.
• First aid (overview): Eye/skin contact—immediate decontamination with copious water for ≥15 minutes; remove contaminated clothing. Inhalation—move to fresh air. Ingestion—do not induce vomiting; seek medical attention. Always follow SDS.

Waste: Collect spent stripper and rinses as hazardous organic waste; segregate from oxidizers and acids. Follow institutional and regulatory disposal guidelines.

Solvent Selection

This product functions as a dedicated positive photoresist stripper. Solvent selection considerations revolve around substrate compatibility, resist chemistry, and downstream rinsing.

• Polarity class (general): PR strippers are commonly polar aprotic blends, sometimes with amine activators. They swell and dissolve novolak/DNQ and chemically amplified positive resists.
• Miscibility profile (general): Many are water-miscible or at least water-rinsable; verify with this item’s CoA/SDS. Follow with appropriate rinses (e.g., IPA then DI water) to prevent watermarking.
• When to choose a formulated stripper vs single solvents:
  • Choose this product for complete PR removal after develop or etch steps, especially where acetone/IPA are insufficient or cause redeposition.
  • Prefer formulated strippers for lift-off resists and stubborn cross-linked films (e.g., post-etch, ion implant, or hard-baked resists), where swelling plus chemical cleavage is beneficial.
  • For sensitive metals (Al, Cu, Ti/TiN), use MOS-grade strippers designed for minimal corrosion; confirm with coupon testing.

Comparison (literature/general):

• Acetone/IPA: fast evaporation, poor on hardened resists, risk of redeposition.
• NMP/DMSO single-solvent: good solvency, slower on cross-linked films; may lack corrosion inhibitors.
• Formulated MOS-grade stripper (this category): balanced solvency, activation, and corrosion protection; process-tunable with temperature/time.

Always confirm compatibility with dielectrics, low-k materials, and passivation layers using test wafers.

Storage and Reconstitution

• Storage conditions (as provided): Room temperature. Keep container tightly closed in a clean, dry, well-ventilated area.
• Shipping: Normal conditions.
• Reconstitution: Not applicable—ready-to-use liquid formulation (typical for this category). Any dilution or blending, if desired, should be qualified by the user; no vendor instructions are provided here.

Best practices (general):

• Minimize moisture ingress if the formulation is hygroscopic or water-sensitive; use dry nitrogen blanket where process controls require.
• Store in compatible containers (glass, PTFE, PFA, or vendor-approved materials). Avoid reactive metals and incompatible plastics.
• Avoid temperature extremes and direct sunlight. Do not freeze unless specified on the CoA/SDS.
• Label containers with open date and track bath age if used in recirculating systems; replace per your POR to control NVR and particulate load.

Shelf life and specific stabilizers: Not specified for this item; refer to CoA/Spec Sheet.

Structure and Identity

This product is a formulated process chemical designed to remove positive-tone photoresists (PR) from semiconductor and microfabrication substrates. It is a mixture, not a single defined compound.

• Item type: formulated PR stripping solution (mixture)
• CAS: Not specified for this item; refer to CoA/Spec Sheet.
• Molecular formula: Not specified for this item; refer to CoA/Spec Sheet.
• Molecular weight: Not specified for this item; refer to CoA/Spec Sheet.
• SMILES / InChI / InChIKey: Not applicable for mixtures; Not specified for this item; refer to CoA/Spec Sheet.
• Structural features (general, literature): PR strippers commonly comprise high-boiling polar aprotic solvents (e.g., N-alkylpyrrolidones, sulfoxides, carbonates) optionally combined with alkanolamines or proprietary amine activators and corrosion inhibitors. Exact composition for this SKU is not disclosed.
• 2D description in words: As a mixture, no single discrete structure applies. Functionally, the formulation solubilizes and/or chemically cleaves novolak/DNQ and chemically amplified positive resists by swelling, base-catalyzed deprotection, and dissolution mechanisms (literature, general).

Note: Identity details and any regulatory identifiers specific to this SKU are not provided here; consult the product’s CoA/SDS for definitive information.

Synthetic Utility

Not typically applicable as a reagent in synthetic organic chemistry. Positive PR strippers are engineered solvents/additives for removing lithographic polymers and residues, not for performing chemical transformations.

For users in micro/nanofabrication, consider the following utility notes (general):

• Enables clean pattern transfer by removing sacrificial positive resists without attacking underlying device layers when properly selected.
• Useful in lift-off workflows for metal patterning, helping minimize fences and flakes when paired with appropriate resist undercuts and agitation.

For chemical synthesis applications, choose purpose-built reagents instead (e.g., base catalysts, polar aprotic solvents) and see the Solvent Selection section for general solvent property considerations.

Target Specificity

Not applicable. This is not a biological targeting reagent, antibody, or probe. No antigen/epitope specificity, clone, isotype, or species reactivity data apply.