Thermoelectric Materials Selection Guide: Evaluation Framework, Temperature-Range–System Map, and Modularization Gatekeeping Criteria (with Product Navigation Tables 1–4)
Thermoelectric Materials Selection Guide: Evaluation Framework, Temperature-Range–System Map, and Modularization Gatekeeping Criteria (with Product Navigation Tables 1–4)
I. Why are thermoelectric materials worth paying attention to?
All around us, “temperature differences” are constantly being wasted: the outer walls of engines and industrial equipment, heatsinks in data centers and power electronics, even the thermal pathways that cool a laptop. Heat is continuously carried away—yet a temperature gradient itself is a usable driving force. Thermoelectric (TE) materials offer a very distinctive energy-conversion route: they enable solid-state devices that require no moving parts and do not rely on refrigerants or working-fluid cycles, while still being able to convert a temperature difference directly into electricity (for power generation/energy harvesting) or use electricity to directly pump heat (for cooling and precision temperature control).
Thermoelectrics are not trying to “replace all heat engines or vapor-compression refrigeration.” A more realistic positioning is that they are most valuable in small-scale, distributed, maintenance-unfriendly scenarios where quiet, reliable operation or precise temperature control is required. In these settings, thermoelectrics may compete with conventional fluid-based systems, and they are also frequently used for smaller-scale applications. In a Science review, Bell explicitly emphasized this positioning and provided typical application examples such as automotive seats, night-vision systems, and electrical cabinet cooling.
The thermoelectric effect can be understood in two sentences:
1. Seebeck (ΔT → voltage): when the two ends of a material are at different temperatures, a potential difference appears. Built into a device, this effect enables electrical power output driven by a temperature gradient.
2. Peltier (current → heat pumping): when current passes through an appropriately designed thermoelectric device, one side absorbs heat while the other releases heat, enabling solid-state cooling/heating and temperature control. However, Joule heating and the device’s own thermal conduction also exist, so the net cooling capacity/COP depends on current, internal resistance, thermal conductivity, and the temperature difference.
Advanced thermoelectric materials = within the target operating temperature range, they deliver sufficiently high and reproducible overall performance and can clear the “device-ization” threshold (contacts/interfaces/stability), turning material advantages into module-level advantages.
Note: Why emphasize the “target temperature range”? Because thermoelectric performance changes with temperature, and devices must span both hot and cold ends. Engineering cares more about the overall level across a temperature window than about a peak value at a single temperature point.
II. A four-question framework for “how strong” a thermoelectric material really is
Four key questions | What is being measured? | What it implies for subsequent selection |
① Under a given temperature difference, how strong is the thermoelectric voltage response? | The ability to generate an electromotive force from ΔT (whether “voltage can be built up”) | If the response is weak, achieving the target voltage often requires a larger ΔT, more thermocouple pairs in series, or switching to a material system better matched to the temperature range. |
② When delivering current, are resistive losses sufficiently low? | Electrical transport capability and internal resistance (whether “power can be delivered”) | If internal resistance is too high, output power and efficiency are significantly reduced by Ohmic loss, and the device heats up more easily; both the bulk material and the electrical contacts must be considered. |
③ When establishing a temperature difference, is heat leakage small enough—can the ΔT be sustained? | The rate of heat transfer (whether “the temperature gradient can be maintained”) | With large heat leakage, maintaining the same ΔT requires greater heat input, and the upper limit of efficiency/COP is suppressed; comparisons should be made in the target range, with attention to how structure/microstructure affects heat transport. |
④ Within the target operating window, is the overall performance consistently excellent and reproducible? | A comprehensive score (commonly characterized by zT), and its temperature dependence | Selection should prioritize the overall level within the target window (average/integral sense) and reproducibility, rather than a peak at a single temperature point; this provides a unified criterion for later material-system tables and product tables. |
Supplement: definition of zT
where S is the Seebeck coefficient, σ is electrical conductivity (ρ = 1/σ), κ is total thermal conductivity, and T is absolute temperature.
Because S, ρ, κ often vary strongly with temperature, it is usually better to compare average/integral performance over the target window (and reproducibility) rather than focusing only on a peak zT at one temperature.
Tips:
1. Tie your judgment to a temperature range: TE properties change with temperature; excellent near room temperature does not guarantee excellence at mid–high temperature. Whether a material is “strong” must be judged under the actual operating window.
2. Material performance ≠ module performance: even if the material has a high comprehensive score, real devices can still underperform due to poor electrical/thermal contacts, interfacial reactions and element diffusion, thermal-cycling fatigue, and packaging/heat-path design.
3. Check whether the measurement basis is consistent: when comparing across papers or samples, pay attention to test conditions (how ΔT is established, sample form/anisotropy, measurement methods and repeatability). Otherwise, “higher/lower” may reflect methodology and uncertainty rather than true material differences.
III. Temperature-range–material-system map
Target temperature range (typical) | Common representative material systems | Typical application positioning | Key decision points during selection |
Near room temperature / low ΔT: ~250–500 K | Bi₂Te₃-based alloys (n/p pairs: Bi₂Te₃–Bi₂(Te,Se)₃ / Sb₂Te₃, etc.) | Solid-state cooling/precision temperature control; energy harvesting from low-grade temperature differences (small power) | First: overall performance in the target window (don’t fixate on a peak). Then: maturity of n/p pairing and whether robust solutions exist for electrical/thermal contacts and interfacial layers (often determining whether a module “drops out”). |
Low–mid temperature: (~300–700/723 K) | Mg₃(Sb,Bi)₂-based (Zintl) | Cooling/temperature control and low-grade waste-heat power generation from near-room to mid temperature; considered an important candidate to replace/supplement traditional low-temperature systems | First: does it cover your window with strong “average performance” (e.g., average over 300–700 K)? Then: joining/brazing temperature window and thermal stability (mismatch in joining temperature can introduce service risk). |
Mid temperature: ~400–900 K | Mid-temperature chalcogenides: PbTe (classic mid-T reference), plus SnSe, GeTe (common research mainlines) | Mid-temperature waste-heat power generation (hot side clearly above room temperature) | First: compatibility with environment/compliance constraints (e.g., Pb-containing systems may be restricted in some applications). Then: chemical/thermal stability and packaging strategy at elevated temperature (oxidation/interfacial reactions become more limiting). |
Mid-temperature power generation: ~600–900 K | Skutterudites (CoSb₃-based, filled types, etc.) | One of the more mature module routes for mid-temperature power generation (literature and device “chain” relatively complete) | First: whether there is a complete evidence chain from “material → module” (how diffusion barriers, contact layers, interconnect electrodes are implemented). At mid temperature, interface engineering often determines reliability. |
Mid–high temperature: ~700–1000 K (≈427–727 °C) (some systems extend higher) | Half-Heuslers (common families: (Ti,Zr,Hf)NiSn (n-type) / (Ti,Zr,Hf)CoSb (p-type)) | Mid–high temperature waste-heat power generation, emphasizing power density, mechanical/thermal stability, and scalability | First: where the peak temperature point lies (is it near your hot side?). Then: high-temperature interfacial reactions/diffusion barrier layers and thermal-cycling reliability (at mid–high T, “advanced” leans more toward engineering realization). |
High temperature: ~900–1300 K | SiGe alloys (classic high-T system) | High-temperature power generation and aerospace/extreme environments (historical chain for RTGs, etc.) | First: long-term high-temperature stability and joining/packaging system. Then: cost and processing window (SiGe has clear high-T advantages, but material and process costs are also more pronounced). |
IV. Why can a thermoelectric module still perform poorly even when the material is “strong”?
1. Contact losses (electrical/thermal contact issues): if electrical contact resistance or thermal contact resistance is too high, the input temperature difference or electrical energy is “consumed” by interfacial losses, directly reducing output power (generation) or cooling capacity (cooling).
2. Interfacial reactions and element interdiffusion: more pronounced during mid–high temperature service; reactions or element migration at interfaces can cause time-dependent degradation. A suitable diffusion barrier layer and joining process are typically required to suppress this.
3. Insufficient thermal cycling reliability: repeated heating/cooling cycles can induce debonding, cracking, or microstructural evolution, causing performance drift and compromising long-term stable operation.
4. Inadequate thermal management & packaging: the heat-rejection path and packaging structure determine whether a temperature difference can be “established and maintained.” Once significant parasitic heat leakage appears, power-generation efficiency drops, and cooling COP (Coefficient of Performance) also worsens markedly.
V. Product Navigation Table | Thermoelectric-Materials-Related Chemicals: Quickly Locate Tables 1–4 by “Research Task / Experimental Need”
Research task / experimental need | Which table to check first | Why start there | What you typically look for in the table (example products) |
Preparing to synthesize TE materials, but worried the formulation/doping may be off; want to first lock down elemental content and impurities (ICP/AAS, ion analysis, doping-level verification, contamination troubleshooting) | Table 1 | Reference materials & analytical standards | Before/after synthesis you must be able to quantify what you actually made; elemental quantification and calibration are the lowest-cost quality loop. Build instrument calibration and standard curves first so the “doping–property” relationship is credible. |
Running thermal analysis (DSC/DTA: phase transitions, melting, reaction exotherms, sintering window, phase diagram / thermal-stability comparison) | Table 1 | Reference materials & analytical standards | TE systems often include low-melting chalcogenides and multiphase eutectics; an inaccurate temperature axis directly misleads phase-transition and processing-window interpretation. Calibrate the temperature scale with melting-point standards before testing real samples. |
Synthesis route not finalized; want to assemble a universal “raw-material kit” that covers common systems (chalcogenides/antimonides/silicides/half-Heuslers, etc.) | Table 2 | Elemental substances & metal precursors + Table 4 | Parent-phase TE compounds |
Working on near-room-temperature TE (common benchmark systems); need a starting point that can be compared to literature quickly | Table 4 | Parent-phase TE compounds | Bi₂Te₃/Sb₂Te₃/Bi₂Se₃, Ag₂Se, etc. are the most common near-room/low-temperature reference systems. Starting from parent phases yields comparable data fastest, then you can decide whether to return to Table 2 for high-purity batching and doping. |
Working on mid-temperature TE (typical PbTe / PbSe / SnTe / GeTe); want systematic doping, solid solutions, nanostructuring to reduce thermal conductivity | Table 4 | Parent-phase TE compounds (start) → Table 2 | Elemental precursors (advanced) |
Pursuing superionic / low-lattice-thermal-conductivity routes (Cu₂Se/Cu₂S, etc.); focused on cycling stability, ion migration, phase stability | Table 4 | Parent-phase TE compounds | Cu₂Se/Cu₂S are classic systems with high performance but sensitive stability and phase behavior. Securing stable, reproducible parent-phase samples is the priority before discussing doping/compounding. |
Working on skutterudites (CoSb₃) or Zn–Sb antimonides; focused on mid–high-T performance, filling/defect/compounding control | Table 4 | Parent-phase TE compounds (start) + Table 2 | Elemental precursors (when custom batching is needed) |
Working on silicide TE (Mg₂Si, FeSi₂); prioritizing high-temperature stability, oxidation resistance, or lower-toxicity directions | Table 4 | Parent-phase TE compounds (start) → Table 2 | Elemental precursors (custom batching/doping) |
Working on oxide TE thin films / interface engineering (epitaxy, heterostructures, thin-film transport/anisotropy) | Table 3 | Oxides & single-crystal substrates | For thin-film/interface routes, the “first-principles variable” is often the substrate and orientation. Lock the growth platform (substrate) first, then decide material/doping and downstream measurements. |
Planning CVT (chemical vapor transport) crystal growth for single crystals/high-quality crystals (intrinsic transport, anisotropy, defect studies) | Table 2 | Elemental substances & metal precursors | CVT often needs halogen transport agents and high-purity precursors. Preparing “transport agent + high-purity sources” first improves crystal quality and reproducibility. |
Exploring processing windows “from powder to bulk” (ball milling/mechanical alloying, hot pressing/SPS, composite fillers, nanostructuring) | Table 2 | Elemental substances & metal precursors (powders/nanopowders first) + Table 4 | Parent-phase powders** |
Safety/compliance-first: want to avoid highly reactive/sensitive reagents and start with a conservative reference route | Table 4 | Parent-phase TE compounds (start) + Table 1 | Analytical standards** |
Usage suggestions:
1. “Get it running first”: usually start with Table 4 (parent phases) to obtain measurable samples and baselines fastest.
2. “Mechanisms & doping rules”: return to Table 2 (high-purity elements/powders) for controlled formulations.
3. “Data-credibility loop”: keep Table 1 (calibration/standards) as a full-process companion.
4. “Thin films / epitaxy”: prioritize Table 3 (substrates & oxide platforms).
Table 1 | Reference Materials & Analytical Standards (Thermal-Analysis Calibration / Elemental Quantification QC)
Category | CAS No. | Aladdin Cat. No. | Name | Specification / Purity | Product features & applications (thermoelectric materials) |
Reference material | Thermal analysis (DSC/DTA) calibration | 7439-92-1 | Thermal analysis reference material (lead) | Melting temperature: 327.77 °C | Used for DSC/DTA temperature calibration (near the melting point) to improve the accuracy of thermal-analysis data for TE materials (phase transitions/melting/sintering window), supporting phase-diagram interpretation and process-window comparisons. | |
Reference material | Thermal analysis (DSC/DTA) calibration | 7440-31-5 | Thermal analysis reference material (tin) | Melting temperature: 231.81 °C | Used for DSC/DTA calibration in the lower-temperature range; helps calibrate measurements of low-temperature phase transitions and low-melting components in TE materials (e.g., Bi/Te-based systems). | |
Standard solution/CRM | ICP/elemental analysis (Ni) | 7440-02-0 | Nickel standard solution (water quality) | Concentration: 1.39 mg/L; matrix: water | Used for ICP/AAS QC and calibration to monitor Ni content/contamination (Ni is common in half-Heuslers and Ni-based alloy TE systems for composition control and impurity management). | |
Standard solution | ICP/elemental analysis (K) | 7440-09-7 | Potassium standard solution | 500 mg/L in water | Used for ICP/ion-analysis calibration: monitors alkali-metal (K) doping/impurities (alkali metals can strongly change carrier concentration and defect chemistry), improving TE formulation reproducibility. | |
Standard solution | ICP/elemental analysis (Hf) | 7440-58-6 | H492379 | Hafnium standard solution | 1000 μg/mL in 1.0 mol/L HNO₃, trace HF | Used for Hf quantification (Hf is often used to tune half-Heusler solid solutions such as (Hf,Zr)NiSn via mass-disorder/phonon scattering); supports QC validation of doping/solid-solution ratios. |
Table 2 | Elemental Substances & Metal Precursors (High-Purity Metals / Semiconductor Elements / Reactive Metals)
Category | CAS No. | Aladdin Cat. No. | Name | Specification / Purity | Product features & applications (thermoelectric materials) |
Element | Chalcogen (Se) | 7782-49-2 | Selenium, black, 99+ | Suitable for analysis, superior grade | Key precursor for selenide TE materials (e.g., SnSe, Bi₂Se₃, PbSe, Cu₂Se). Used for stoichiometry compensation and doping controls, and as a Se source for thin-film/powder systems—useful for reproducible composition-window studies. | |
Element | High-purity chalcogen (Te) | 13494-80-9 | T434724 | Tellurium | PrimorTrace™, ≥99.999% metals basis, pieces | Core Te source for telluride TE materials such as Bi₂Te₃, PbTe, Sb₂Te₃, GeTe, SnTe. High purity helps reduce background doping/defect introduction, improving reproducibility and comparability. |
Auxiliary reagent | CVT transport / halogen chemistry | 7553-56-2 | I116351 | Iodine | Chemical pure (CP), ≥99.5% | Common halogen transport agent for chemical vapor transport (CVT) crystal growth; also used for halogen-related chemical tuning/controls (corrosive and volatile; use under proper ventilation). |
Element | Metal precursor (Co) | 7440-48-4 | Cobalt | Carbon-coated magnetic nanomaterial, nanopowder, <50 nm (TEM), ≥99% | Co source for CoSb₃ (skutterudites) and Co-based alloy/composite TE materials. Nanopowder (carbon coating slows oxidation) suits mechanical alloying, composite fillers, and pre-sinter batching for carrier/phonon-scattering engineering studies. | |
Element | Semiconductor element (Si) | 7440-21-3 | Silicon | Nanopowder <100 nm (BET); <3% oxygen passivation | For Si-based/SiGe TE and nanostructure research; also a reactive Si source for forming silicide TE materials such as Mg₂Si and FeSi₂. Nanoscale Si promotes solid-state reaction kinetics and densification. | |
Element | High-purity semiconductor element (Ge) | 7440-56-4 | G434829 | Germanium | PrimorTrace™, ≥99.999% metals basis, sheet, thickness 2.0 mm, size 10×24 mm | High-purity Ge as a precursor/component for GeTe and SiGe TE systems. High purity helps decouple carrier concentration effects from impurity scattering; sheet form also suits melt alloying or use as an evaporation source. |
Element | High-purity metal/metalloid (Bi) | 7440-69-9 | B109170 | Bismuth shot | PrimorTrace™, ≥99.999% metals basis, 1–6 mm | Key Bi source for near-room-temperature TE mainlines such as Bi₂Te₃ and Bi–Sb–Te. Shot form is convenient for weighing and alloying; also useful for Bi-rich phases and low-melting sintering-aid control studies. |
Element | Metalloid (Sb) | 7440-36-0 | A109133 | Antimony powder | Chemical pure (CP), ≥99% | Key precursor for Sb₂Te₃, CoSb₃, Zn–Sb and related TE systems. Powder form aids solid-state reaction and batching for sintering; supports p-type carrier tuning and alloying-window exploration. |
Reactive metal | Reducing / flux metal (compliance required) | 7440-23-5 | S477592 | Sodium (explosion precursor) | Lump; max lump size 200 mm; weight 100 g; rod form | In inorganic/materials research, can serve as a strong reductant/flux to accelerate reaction kinetics and tune composition in selected intermetallic/chalcogenide routes. Requires strict compliance, storage, and safety control (avoid moisture/water reaction). |
Reactive metal | Alloying / reducing (compliance required) | 7439-95-4 | M109153 | Magnesium powder (explosion precursor) | AR, ≥99.5% | Key Mg source for Mg₂Si/Mg-based silicides, Mg-containing Zintl/alloy TE materials; also usable for reduction/deoxygenation controls. Powder is reactive—handle under compliant safety management. |
Alloy precursor | Half-Heusler / alloying metal (Zr) | 7440-67-7 | Z112792 | Zirconium powder (explosion precursor) | 99.5% metals basis (Hf excluded), ≥200 mesh | Common precursor for Zr-based half-Heuslers (e.g., ZrNiSn) and other high-temperature-stable alloy TE systems. Powder form supports solid-state alloying and sintered sample preparation. |
Alloy precursor | Half-Heusler / alloying metal (Ti) | 7440-32-6 | T109127 | Titanium powder | PrimorTrace™, ≥99.99% metals basis, powder, ≥300 mesh | Ti powder is used for Ti-based half-Heuslers (e.g., TiNiSn directions) and multicomponent alloy TE precursors. Fine powder promotes solid-state reaction, mechanical alloying, and densification during sintering. |
Table 3 | Oxides & Single-Crystal Substrates (Oxide Thermoelectrics / Thin-Film Epitaxy Platform)
Category | CAS No. | Aladdin Cat. No. | Name | Specification / Purity | Product features & applications (thermoelectric materials) |
Oxide / titanate | Oxide thermoelectrics | 1314-13-2 | Zinc oxide (ZnO) | European Pharmacopoeia (Ph. Eur.), suitable for analysis, ACS, premium grade | Candidate oxide-thermoelectric system: ZnO can be tuned to n-type conduction and its thermoelectric properties can be engineered via defects/doping (e.g., Al/Ga-related research directions). It is also commonly used as a filler or interfacial layer in composites to adjust thermal conductivity and improve interface stability. | |
Oxide / titanate | Substrate / oxide thermoelectrics | 12060-59-2 | Strontium titanate (SrTiO₃) | Single-crystal substrate ⟨100⟩ | SrTiO₃ single-crystal substrates are widely used for epitaxial growth of oxide thin films and heterostructures (including oxide-thermoelectric and interface-engineering studies). A well-defined orientation facilitates thin-film transport measurements and anisotropy benchmarking. |
Table 4 | Thermoelectric Parent Phases (Chalcogenides / Antimonides / Silicides / Skutterudites)
Category | CAS No. | Aladdin Cat. No. | Name | Specification / Purity | Product features & applications (thermoelectric materials) |
Chalcogenide semiconductor | Pb–S (benchmark/precursor) | 1314-87-0 | Lead sulfide (PbS) | Galena (natural), 0.06–0.19 inch | Pb–S semiconductor mineral sample: useful as a mineral-phase benchmark, for precursor comparisons, or for quantum-dot/nanostructure research. Natural minerals typically contain more impurities, so they are better as references than as “high-purity matrices” for pursuing peak thermoelectric performance. | |
Chalcogenide thermoelectric | Sn–S | 1314-95-0 | Tin(II) sulfide (SnS) | PrimorTrace™, ≥99.99% metals basis | SnS is a layered, relatively “friendlier-element” thermoelectric candidate; used for exploring lower-toxicity sulfide routes, defect control, and anisotropic transport. | |
Cu/Ag chalcogenide thermoelectric | Cu–S | 22205-45-4 | Cuprous sulfide (Cu₂S) | Powder, −325 mesh | Representative superionic-conductor thermoelectric system: low lattice thermal conductivity, suitable as a matrix/secondary phase for high-zT directions. Fine powder is convenient for hot pressing/SPS and composite mixing to study phonon scattering and stability benchmarks. | |
Chalcogenide thermoelectric | Bi–S | 1345-07-9 | Bismuth(III) sulfide (Bi₂S₃) | PrimorTrace™, ≥99.999% metals basis | A common material in low-thermal-conductivity sulfide directions; used in nanowire/composite systems, interface engineering, and exploratory thermoelectric routes aimed at lower-toxicity substitutions. | |
Chalcogenide thermoelectric | Sn–Se | 1315-06-6 | Tin selenide (SnSe) | PrimorTrace™, ≥99.999% metals basis | Signature layered thermoelectric (mid–high temperature direction). A high-purity parent phase is suitable for studying defect/doping (carrier concentration) and anisotropic-transport mechanisms. | |
Chalcogenide thermoelectric | Pb–Se | 12069-00-0 | Lead selenide (PbSe) | PrimorTrace™, ≥99.999% metals basis, lumps, max. lump size 6 mm, weight 50 g | Common parent phase for mid-temperature thermoelectrics and PbTe/PbSe solid solutions. High purity supports systematic studies of doping trends, solid-solution phase diagrams, and thermal-conductivity engineering. | |
Cu/Ag chalcogenide thermoelectric | Cu–Se | 20405-64-5 | Cuprous selenide (Cu₂Se) | ≥99.9% metals basis | Representative superionic-conductor thermoelectric system with many high-zT reports; used for bulk/thin-film/composite research (phonon scattering, phase stability, suppressing ion migration, etc.) as benchmarks and controls. | |
Cu/Ag chalcogenide thermoelectric | Ag–Se | 1302-09-6 | Silver(I) selenide (Ag₂Se) | ≥99.9% metals basis | Common parent phase for near-room-temperature (including flexible directions) thermoelectrics; used for Ag–Se composites, nanowires/thin films, and low-temperature transport benchmarking. | |
Cu/Ag chalcogenide thermoelectric | Ag–Te | 12002-99-2 | Silver(I) telluride (Ag₂Te) | Powder, bulk pieces | Typical low-temperature / near-room-temperature thermoelectric and narrow-bandgap material; used for flexible/low-temperature thermoelectrics and Ag–Te composites, and as a dopant/second-phase component for two-phase tuning. | |
Chalcogenide thermoelectric | Ge–Te | 12025-39-7 | G302585 | Germanium telluride (GeTe) | PrimorTrace™, ≥99.999% metals basis | Classic p-type mid-temperature thermoelectric parent phase; widely used for solid-solution/doping engineering (band engineering, phase-transition-related transport) and composite thermal-conductivity reduction studies. |
Chalcogenide thermoelectric | Sn–Te | 12040-02-7 | Tin(II) telluride (SnTe) | PrimorTrace™, ≥99.999% metals basis | Important p-type mid-temperature parent phase; used for band convergence, defect engineering, and alloying studies (e.g., benchmarking against PbTe/GeTe-related systems). | |
Chalcogenide thermoelectric | Pb–Te | 1314-91-6 | Lead telluride (PbTe) | PrimorTrace™, ≥99.99% metals basis | Classic high-performance mid-temperature thermoelectric. High-purity parent phase enables systematic n/p-type doping and nanostructuring for reduced thermal conductivity; a key benchmark reference. | |
Chalcogenide thermoelectric | Bi₂Te₃ benchmark | 1304-82-1 | Bismuth(III) telluride (Bi₂Te₃) | PrimorTrace™, ≥99.99% metals basis, powder | The near-room-temperature “benchmark material” for thermoelectrics. Powder form is convenient for SPS/hot pressing to make bulk and composites, enabling comparisons of Seebeck/electrical/thermal conductivity and doping effects. | |
Chalcogenide thermoelectric | Bi–Se | 12068-69-8 | Bismuth(III) selenide (Bi₂Se₃) | PrimorTrace™, ≥99.99% metals basis | Common component for Bi–Te–Se solid solutions and bandgap tuning; also used as a reference in thin-film and topology-related transport studies coupled with thermoelectric behavior. | |
Chalcogenide thermoelectric | Sb₂Te₃ | 1327-50-0 | A119270 | Antimony(III) telluride (Sb₂Te₃) | ≥99.96% metals basis, powder | Classic p-type layered thermoelectric; often forms solid solutions with Bi₂Te₃ to optimize near-room-temperature performance, and is also used as a reference for topological/thermoelectric-coupling studies. |
Antimonide thermoelectric | Zn–Sb (mid-T) | 12039-42-8 | Z476582 | Zinc antimonide | ≥99.9% metals basis, powder, −80 mesh | Mid-temperature Zn–Sb family thermoelectrics (often p-type). Powder form supports solid-state reaction and sintering; suitable for studying phase-composition–transport correlations, mechanical stability, and thermal-conductivity reduction strategies. |
Antimonide thermoelectric | ZnSb (mid-T) | 12039-35-9 | Z466818 | Zinc monoantimonide (ZnSb) | ≥99.9% metals basis, −80 mesh | Representative mid-temperature p-type thermoelectric; suitable for benchmarking off-stoichiometry/defect chemistry and thermal stability, and for mechanistic studies across the Zn–Sb phase field. |
Skutterudite thermoelectric | CoSb₃ | 12187-20-1 | C476583 | Cobalt triantimonide (CoSb₃) | ≥99.9% metals basis, powder, >80 mesh | Mid–high-temperature skutterudite parent phase; performance is often improved via filling/doping/nanostructuring (lowering lattice thermal conductivity). This powder is suitable for direct sintering and for mapping doping/composition windows. |
Silicide thermoelectric | FeSi₂ | 12022-99-0 | Iron disilicide (FeSi₂) | ≥99.9% metals basis, powder, −20 mesh | Silicide direction such as β-FeSi₂: high-temperature stable and relatively oxidation-resistant; suitable for high-temperature thermoelectric and harsh-environment reference studies. Powder is convenient for hot pressing/SPS shaping and composite design. | |
Silicide thermoelectric | Mg–Si | 22831-39-6 | Magnesium silicide (Mg₂Si) | ≥99.7% metals basis, powder, 3–12 mm | Mg₂Si (Mg–Si silicide) is a lightweight, relatively low-toxicity n-type thermoelectric parent phase; suitable for high-temperature stability studies, doping, and composite thermal-conductivity reduction. | |
Cu/Ag chalcogenide thermoelectric | Cu–Te | 12019-52-2 | Copper telluride (Cu–Te) | ≥99% | Cu–Te chalcogenides can be used for thermoelectrics and composite tuning (as a second phase/dopant component affecting carriers and thermal transport). They are also common as Cu–Te sources in nanostructure and interface-engineering studies. |
Note: The products above are representative Aladdin items. For more specifications, please refer to the product list at the end of the article or search the Aladdin website using the “product name / CAS / catalog number.”
Aladdin: https://www.aladdinsci.com/
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