≥99%,0.8～1.0um for sensitive chromatographic and analytical workflows requiring minimal baseline interference.
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Storage & shipping
Room temperature,Argon charged,Desiccated Ships Normal Check lot-specific COA for exact specifications.
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Quality documents
SDS, COA, datasheet, and spec sheet available for download. Lot-specific COA accessible via lot number lookup.
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Literature proof
Cited in 222 peer-reviewed publications across chromatography, organic synthesis, and cross-coupling reactions.
Overview
Silicon carbide comes in two types: black silicon carbide and green silicon carbide. It is soluble in molten alkalis and molten iron, but insoluble in water, ethanol, and acids. It is irritating. Its microhardness is 2840–3320 kg/mm². It has excellent thermal conductivity. It sublimates and decomposes at 2700℃. It is used in abrasives, high-temperature resistant materials, and in the manufacture of high-purity single crystals and semiconductors.
This compound belongs to the class of inorganic compounds known as miscellaneous mixed metal/non-metals. These are inorganic compounds containing non-metal as well as metal atoms but not belonging to afore mentioned classes.
External Descriptors
organosilicon compound
1. Djoumbou Feunang Y, Eisner R, Knox C, Chepelev L, Hastings J, Owen G, Fahy E, Steinbeck C, Subramanian S, Bolton E, Greiner R, and Wishart DS. ClassyFire: Automated Chemical Classification With A Comprehensive, Computable Taxonomy. Journal of Cheminformatics, 2016, 8:61.
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Application Protocols
Not applicable in the immunoassay/biochemical sense. No validated WB/IHC/IF/FC protocols apply to silicon carbide as a reagent.
Materials-focused usage notes (literature; not specifications for this item)
Microwave heating aid: Place pre-cleaned SiC beads in the reactor; ensure agitation so beads do not block stirring. After reaction, decant or filter to remove beads; rinse and reuse.
Catalyst support workflows: Impregnate SiC with metal salt solution, dry, and reduce/calcine per catalyst recipe; perform reactions under standard heterogeneous catalysis protocols. Characterize by ICP-OES (metal loading) and TEM/SEM.
Mechanochemistry: Blend SiC with solid reactants before loading the milling jar to prevent caking; select jar/ball materials to minimize cross-contamination.
For any detailed, application-specific SOP, consult primary literature and validate at small scale.
Biological Roles
Not applicable as a biological molecule. Silicon carbide is an inorganic, extended covalent solid with no intrinsic metabolic or signaling role.
Literature context (materials–bio interface; not a specification for this item)
Biocompatibility: Certain SiC forms (e.g., coatings, MEMS materials, nanostructures) are studied for chemical inertness and stability in physiological environments, with potential use as protective coatings for sensors or neural interfaces due to corrosion resistance and wide electrochemical window.
Surface modification: Oxidized SiC surfaces can present Si–O–Si terminations that are further silanized to attach biomolecules; such treatments are application-specific and require surface preparation.
Research-use reminder
This product is for research use only (as provided). It is not intended for use in diagnostic or therapeutic procedures.
Buffer Applications
Not applicable. Silicon carbide does not function as a buffering agent and is insoluble in aqueous media. For lab workflows, SiC may appear as:
Solid support/weighting agent in centrifugation or filtration setups.
Abrasive or grinding auxiliary for tissue homogenization in certain extraction protocols.
Select conventional buffers (e.g., phosphate, HEPES, Tris) appropriate to your biological system; SiC will not contribute to pH control.
Green Alternatives
Silicon carbide is often chosen as a durable, inert material that can make processes greener by enabling higher efficiency or longer lifetimes rather than by being a “green reagent” per se. Consider the following comparisons (literature; not item-specific):
Comparison highlights
As a microwave susceptor vs carbon or graphite: SiC offers strong microwave absorption with lower risk of shedding conductive particulates into mixtures; it is more oxidation-resistant than graphite at moderate temperatures.
As a catalyst support vs Al2O3, SiO2, TiO2: SiC is less acidic/basic and more inert, which can diminish undesired side reactions and coking, extending catalyst lifetime and reducing waste/turnarounds.
As a milling aid vs NaCl or alumina grit: SiC’s hardness and chemical inertness limit contamination; media can be reused extensively, reducing consumables.
Illustrative trade-offs
Pros: High thermal conductivity and shock resistance, excellent chemical durability, low leaching, reusability.
Cons: Higher embodied energy in manufacture than some oxides; fewer surface hydroxyl groups can make direct functionalization harder (may require an intermediate SiO2 layer or plasma treatments).
Mini-comparison table
Support needing neutrality and high T stability: Prefer SiC over Al2O3.
Support needing high surface hydroxyl density for grafting: Prefer SiO2 over SiC.
Microwave coupling aid: Prefer SiC or graphite over glass/ceramics; use SiC where oxidation or carbon shedding is a concern.
Pharmaceutical Uses
Generally not applicable as an excipient or API. Silicon carbide is primarily a materials science substrate/support/abrasive. Literature mentions use as:
Durable coatings or mechanical components in processing equipment (e.g., seals, bearings) that contact pharmaceutical streams due to chemical resistance and low leaching.
Potential support materials for heterogeneous catalysts used in fine-chemical manufacturing, where reduced acidity can suppress side products.
No pharmacopeial monograph is typically associated with bulk SiC for formulation. For any process-contact application, verify extractables/leachables, particle-shedding, and compliance with relevant GMP and regulatory expectations. This product is for research use only.
Physical Properties
Item-specific (from Product Data)
Appearance: Not specified for this item; refer to CoA/Spec Sheet.
Literature/General values (typical ranges for bulk SiC; polytype- and microstructure-dependent; not specifications for this item)
Crystal structure: Zinc blende (3C) or wurtzite-derived (4H, 6H) polytypes; all are tetrahedrally coordinated covalent networks.
Density: ~3.10–3.22 g/cm³ (3C ~3.21 g/cm³) depending on polytype and porosity.
Melting/decomposition: Practically incongruent melting; sublimes/decomposes above ~2700–3000 °C in inert atmospheres; oxidizes in air at elevated T.
Thermal conductivity: ~120–270 W·m⁻¹·K⁻¹ (higher for high-quality single crystals; lower for porous ceramics).
Electrical properties: Wide-bandgap semiconductor; Eg ~2.36 eV (3C) to ~3.26 eV (4H) at 300 K. Intrinsic resistivity varies widely with doping/defects.
Hardness: Mohs ~9–9.5; Vickers ~24–30 GPa.
Solubility: Insoluble in water and common organic solvents; attacked by molten alkalis and certain halogen-containing melts at high temperature.
Chemical resistance: Excellent against most acids at ambient T; slowly oxidizes above ~800–1000 °C in air to SiO2/SiOxCy layers.
Practical lab notes
High microwave loss tangent relative to glass/ceramics enables efficient microwave coupling/heating in sealed-vial chemistry (literature).
Quality & Grades
Item-specific (from Product Data)
Grade/Purity: Not specified for this item; refer to CoA/Spec Sheet.
Packaging/conditioning: Argon charged, desiccated (as provided for this listing).
Guidance on grades for silicon carbide (literature/general)
Abrasive/ceramic grade: Typically specified by grit/particle size distribution, friability, and impurity profile suitable for refractories or abrasives.
Electronic/semiconductor grade: Specified by polytype (e.g., 4H-, 6H-SiC), crystal orientation, wafer diameter/thickness, micropipe/dislocation density, doping type/level (n/p), and metal contaminants at ppb–ppm levels. Not applicable unless wafers/epilayers are explicitly supplied.
Catalyst support grade: High surface area (foams/porous bodies or nano-SiC), thermal shock resistance; surface chemistry (oxide layer) may be tailored for metal deposition.
What the listed conditioning implies
Argon-charged, desiccated packaging helps maintain a dry, oxygen-lean headspace to limit adventitious surface oxidation/hydroxylation in fine powders and to preserve as-supplied surface state for reproducible processing (e.g., metallization, catalyst deposition).
Verification and CoA
For critical work, confirm particle size distribution, polytype, surface area (BET), metal content, and loss on drying. Since these are not specified for this item, please request the CoA/Spec Sheet for lot-specific details.
Reaction & Applications
Item-specific
Manufacturer Applications: Not provided in the listing. See below for common research uses of silicon carbide (literature context; not specifications for this item).
Materials and synthesis applications (literature)
Microwave-assisted chemistry: SiC beads/plates are frequently added to sealed or open-vessel microwave reactions to improve coupling, flatten temperature gradients, and enable efficient heating in low-absorbing solvents.
Catalyst support: SiC foams, fibers, or powders serve as thermally stable, low-surface-energy supports for deposited metals (e.g., Pd/SiC, Ni/SiC) used in hydrogenations, dehydrogenations, and environmental catalysis. Their thermal shock resistance and inertness reduce side reactions and coking.
Heterogeneous reaction media: As an inert, hard grinding auxiliary in mechanochemistry to improve energy transfer and reduce agglomeration during ball milling; can accelerate solid–solid transformations and amide couplings.
High-temperature processing: Crucibles, susceptors, and tube liners for CVD/ALD and epitaxy (e.g., SiC susceptors for Si/III–V growth). Substrate for epitaxial graphene via Si sublimation at high T under vacuum or Ar.
Electrochemistry: SiC used as a chemically robust support for conductive coatings; doped SiC exhibits semiconducting behavior for high-power/high-temperature devices.
Practical notes
Pre-cleaning (e.g., solvent rinse, mild plasma) can improve metal adhesion for supported catalysts.
When used as a microwave susceptor, size/packing of SiC beads strongly affects heating profiles; calibrate with fiber-optic probes where possible.
Reaction Conditions
General literature guidance (illustrative only; not specifications for this item)
Microwave-assisted heating with SiC beads
Setup: Add 1–3 g of SiC beads (1–3 mm) to a 10–20 mL sealed microwave vial containing the reaction mixture; ensure headspace for pressure relief and stirring efficiency.
Solvents: Applicable across common solvents, including low-loss media (toluene, dioxane, MTBE) where SiC markedly improves coupling.
Temperature control: Validate setpoint vs actual solution temperature with fiber-optic probes during method development; SiC can heat faster than solvent-only loads.
Pd/SiC-catalyzed transformations
Example (hydrogenation, literature): 1–5 wt% Pd on SiC, substrate 0.1–1.0 M in EtOH/EtOAc/THF, H2 1–5 bar, 25–60 °C, 1–8 h; isolate by filtration of the solid catalyst and solvent evaporation. Yields commonly high for clean substrates.
Example (Suzuki–Miyaura, literature): Aryl halide (1.0 equiv), boronic acid (1.2 equiv), base (K2CO3 or Cs2CO3, 2–3 equiv), 0.5–1.5 mol% Pd/SiC, toluene/H2O or dioxane/H2O, 80–110 °C, 2–12 h.
Mechanochemical assistance
Add 10–50 wt% SiC powder relative to reactants in a ball mill to improve mixing and reduce agglomeration; optimize ball size and frequency.
Notes
Always adapt conditions to the specific catalyst formulation and substrate set; SiC is typically inert, so activity derives from the deposited metal or from thermal/microwave effects.
Safety & Handling
Item-specific (from Product Data)
GHS classification, signal word, pictograms, H-statements: Not specified for this item; refer to SDS.
General safety guidance (literature; not a substitute for the SDS)
Primary hazards: Nuisance dust/mechanical irritation. Fine SiC powders can cause eye/skin irritation and respiratory tract irritation upon overexposure. Employ engineering controls to keep airborne particulate below regulatory limits.
PPE: Safety glasses with side shields, lab coat, appropriate gloves. For powders, use a NIOSH-approved particulate respirator if dust generation cannot be controlled.
Handling: Avoid creating dust. Use in a fume hood or ventilated enclosure for weighing/transfer of fine powders. Ground/bond equipment to minimize static when handling dry powders.
Incompatibilities: Strong oxidizers at elevated temperature (risk of exothermic oxidation). Attacked by molten alkalis (NaOH/KOH), halogen-containing fluxes, and certain silica/oxide-forming melts. Avoid exposure to HF in combination with oxidants.
Thermal operations: Oxidation accelerates above ~800–1000 °C in air; operate under inert gas for high-T processing to prevent surface oxidation.
First aid (overview): If inhaled—move to fresh air; obtain medical attention if symptoms persist. Eyes—rinse cautiously with water for several minutes; remove contact lenses. Skin—wash with soap and water. Ingestion—rinse mouth; seek advice as needed. Always consult the SDS for definitive measures.
Waste: Dispose of particulate waste according to local regulations for inert mineral dusts; avoid release to drains.
Solvent Selection
Not typically applicable. Silicon carbide is an insoluble, extended covalent solid rather than a solvent or solute in common laboratory media. For workup/processing, select media based on the surrounding application:
Cleaning/dispersion (literature): Use polar aprotic solvents (e.g., NMP, DMF, DMSO) or water with surfactants/dispersion aids plus sonication to suspend fine SiC powders; true dissolution is not expected.
Etching/oxidation (literature): Wet chemical modification typically employs high-temperature or aggressive media (e.g., molten alkalis, hot oxidants) and is outside routine solution “solvent selection.”
For synthetic chemistry where enhanced microwave coupling or heat transfer is needed, SiC beads can be added to reaction vials regardless of the solvent choice; select solvent based on the transformation, not on SiC.
Reconstitution: Not applicable; silicon carbide is an insoluble solid.
Practical guidance
Keep container tightly closed when not in use to maintain the argon headspace and dryness. Minimize headspace exchanges to limit surface oxidation/hydroxylation of high-surface-area powders.
Store in a dry environment away from acids that release HF, and away from strong oxidizers—especially if high-temperature processing is anticipated.
For fine powders, consider secondary containment to prevent spill/dispersion; avoid humidity which can promote static and dust adhesion.
Before high-temperature or vacuum use, consider a mild pre-drying step (e.g., 100–150 °C under inert gas) to remove adsorbed moisture, if compatible with your application.
Stability (literature)
Bulk SiC is chemically and thermally stable at ambient conditions for extended periods. Surface oxidation in air becomes appreciable only at elevated temperatures (>~800–1000 °C). For most lab uses, the as-supplied argon-charged, desiccated packaging ensures consistent performance over shelf life.
Literature/General identity (for context; not a specification for this item)
Molecular formula: SiC (literature)
Formula weight: ~40.10 g/mol (Si 28.0855 + C 12.011) (literature)
SMILES/InChI: Not applicable for an extended covalent solid; discrete-molecule notations are generally not used for bulk SiC (literature)
Structural features: Silicon and carbon atoms in a tetrahedrally coordinated, sp3-bonded 3D covalent network. Multiple polytypes (e.g., cubic 3C-SiC, hexagonal 4H- and 6H-SiC) differ by stacking sequence but share the same local tetrahedral connectivity (literature).
2D description: Alternating Si and C atoms form corner-sharing tetrahedra extending in all directions; no discrete functional groups, rings, or stereocenters (literature).
Notes for materials scientists
Polytype, particle size/morphology (powder, whisker, wafer, foam), and defect density strongly influence properties (band gap, mobility, thermal conductivity). These attributes are not specified for this item; refer to CoA/Spec Sheet if applicable.
Synthetic Utility
Literature/general use cases (not specifications for this item)
Catalyst support: Deposition of Pd, Ni, Ru, or Cu on SiC yields robust catalysts for hydrogenation, dehydrogenation, C–C coupling (e.g., Suzuki–Miyaura with Pd/SiC), and environmental reactions. The inert support minimizes metal–support interactions that can induce side chemistry.
Microwave susceptor: Addition of SiC beads/plates to reaction vials improves microwave energy absorption in low-loss solvents (e.g., toluene, THF), enabling faster rates and more uniform temperatures.
Mechanochemistry: As a grinding auxiliary in ball milling, SiC mitigates caking, enhances impact energy, and can lower required milling time in solid-state organic syntheses (e.g., peptide couplings with carbodiimides, MOF assembly).
Thermal process hardware: SiC susceptors/crucibles facilitate CVD, ALD, and high-temperature anneals with low contamination risk.
Electrosynthesis platform: Doped or coated SiC can serve as a chemically robust electrode substrate when broad solvent windows or aggressive electrolytes are used.
Practical tips
For supported catalysts, pre-oxidize (to form a thin SiO2 layer) or silanize SiC to increase metal anchoring density when needed.
Particle size matters: Finer SiC increases surface area and microwave absorption but also dusting; balance with handling safety and pressure profiles in sealed vessels.
Target Specificity
Not applicable. This product is a bulk inorganic material and not a biomolecule or affinity reagent. No antigen/epitope specificity, clone, or isotype information pertains to silicon carbide.
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