packaged for use in deposition systems for sensitive chromatographic and analytical workflows requiring minimal baseline interference.
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Storage & shipping
Room temperature Ships Check lot-specific COA for exact specifications.
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Quality documents
SDS, COA, datasheet, and spec sheet available for download. Lot-specific COA accessible via lot number lookup.
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Literature proof
Cited in 0 peer-reviewed publications across chromatography, organic synthesis, and cross-coupling reactions.
Descripción general
Description
Atomic number of base material: 40 ZirconiumAdvanced precursor for atomic layer deposition of ZrO2thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO2and ZrO2films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.Precursors Packaged for Depositions Systems
Specifications
Sinónimos
ZrD-CO₄, ZRCMMM
Especificaciones y pureza
packaged for use in deposition systems
Condiciones de almacenamiento de almacenamiento
Room temperature
Documentation
📋 Safety Data Sheet (SDS)
Comprehensive hazard, handling, storage, and regulatory compliance document.
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