semiconductor grade Semiconductor grade for sensitive chromatographic and analytical workflows requiring minimal baseline interference.
Room temperature Ships Normal Check lot-specific COA for exact specifications.
SDS, COA, datasheet, and spec sheet available for download. Lot-specific COA accessible via lot number lookup.
Cited in 0 peer-reviewed publications across chromatography, organic synthesis, and cross-coupling reactions.
High speed bright copper electroplating solution is an electrolytic acid copper process engineered for plating copper bumps, pads, patterns and redistribution layers as well as filling vials and trenches on wide varieties of substrates including semiconductors, glass, polymers et al. This copper electroplating solution is made up of cupric sulphate and sulphuric acid with small additions of hydrochloric acid and organic additives. The organic additives have a wide concentration process window eliminating the need for separate additive solutions and replenishment for about 120 Amp-hours of electroplating.
Features and Benefits
· The use of single electroplating solution containing plating additives.
· Stable additives with large process window.
· High purity electrolyte and long shelf life.
· High cloud point (>80 °C) and low foaming.
· Low surface tension plating bath (∼44 dyne/cm @ 25 °C).
· High speed plating (Up to 5 μm/min).
· Uniform and flat bumps, pads, patterns and redistributions layers.
· Void free filling of vials and trenches.
Quality
Deposits characteristics:
· Density of 8.9 g/cm3.
· Electrical resistivity of 1.7–1.8 μΩ cm.
· Stress <50 MPa.
· High in-film purity (<10 ppm for N, S, C, O, Cl).
· Low surface roughness, RMS <10 nm @ 1 μm thick Cu.
· Planarization of trenches (no recess in 1 μm wide x 0.5 μm deep trenches with 0.8 μm thick Cu).
· Strong (111) texture with small (220) and (200).
· Reflectivity >75%.
· Elongation of 19–32%.
| PH | <2.5 |
|---|
Comprehensive hazard, handling, storage, and regulatory compliance document.
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A2612568