Tris(tert-butoxy)silanol(TBS) - packaged for use in deposition systems , CAS No.18166-43-3

CAS: 18166-43-3 Cat. No.: T432250 Peso molecular: 264.43 Número EC: 801-265-2 PubChem CID: 316157

GRADE & PURITY packaged for use in deposition systems

Synonyms

Tris(tert-butoxy)silanol | NSC 243646 | NSC243646 | NSC-243646 | Silicic acid (H4SiO4), tris(1,1-dimethylethyl) ester | hydroxy-tris[(2-methylpropan-2-yl)oxy]silane | AS-69209 | tris(t-butoxy)silanol | AKOS016012913 | Tri-t-butoxysilanol | Tri-tert-butylh

Storage

Store at 2-8°C,Argon charged,Desiccated

Shipped In

Wet ice

Descripción general

Tris(tert-butoxy)silanol can react with various metal alkyl amides to act as precursors for vapor deposition metal silicates. It also acts as a suitable precursor for deposition of silica.

Tris(tert-alkoxy)silanols reacts with tetrakis(dimethylamino)-hafnium vapor(Hf(N(CH3)2)4) for vapor phase deposition of hafnium silicate glass films. Tris(tert-butoxy)silanol is used for atomic layer deposition of highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates.

Specifications

Sinónimos

Tris(tert-butoxy)silanol | NSC 243646 | NSC243646 | NSC-243646 | Silicic acid (H4SiO4), tris(1, 1-dimethylethyl) ester | hydroxy-tris[(2-methylpropan-2-yl)oxy]silane | AS-69209 | tris(t-butoxy)silanol | AKOS016012913 | Tri-t-butoxysilanol | Tri-tert-butylh

Especificaciones y pureza

packaged for use in deposition systems

Condiciones de almacenamiento de almacenamiento

Store at 2-8°C, Argon charged, Desiccated

Enviado en

Wet ice

Este producto requiere envío en cadena de frío. Los servicios terrestres y otros servicios económicos no están disponibles.

Nombres e identificadores

• Sonrisas canónicas: CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C
• IUPAC Name: hydroxy-tris[(2-methylpropan-2-yl)oxy]silane
• InChIKey: HLDBBQREZCVBMA-UHFFFAOYSA-N
• INCHI: 1S/C12H28O4Si/c1-10(2,3)14-17(13,15-11(4,5)6)16-12(7,8)9/h13H,1-9H3
• Isómeros SMILES: CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C
• WGK Alemania: 3
• PubChem CID: 316157
• Peso molecular: 264.43

Taxonomic Classification

Taxonomy Tree

• Kingdom Organic compounds
  • Superclass Organometallic compounds
    • Clase Organometalloid compounds
      • Subclass Organosilicon compounds

• Kingdom: Organic compounds
• Superclass: Organometallic compounds
• Clase: Organometalloid compounds
• Subclass: Organosilicon compounds
• Intermediate Tree Nodes: Not available
• Direct Parent: Alkoxysilanes
• Alternative Parents: Organic metalloid salts Organooxygen compounds Organic oxoanionic compounds Hydrocarbon derivatives
• Molecular Framework: Aliphatic acyclic compounds
• Substituents: Alkoxysilane - Organic silicate - Organic metalloid salt - Organic oxygen compound - Hydrocarbon derivative - Organic salt - Organooxygen compound - Aliphatic acyclic compound
• Descripción: This compound belongs to the class of organic compounds known as alkoxysilanes. These are organosilicon compounds with the general formula RO[Si](OR')(R'')(R''') (R,R' = organyl; R'',R''' = any atom).
• External Descriptors: Not available

Data sources

1. Djoumbou Feunang Y, Eisner R, Knox C, Chepelev L, Hastings J, Owen G, Fahy E, Steinbeck C, Subramanian S, Bolton E, Greiner R, and Wishart DS. ClassyFire: Automated Chemical Classification With A Comprehensive, Computable Taxonomy. Journal of Cheminformatics, 2016, 8:61.

DOI: 10.1186/s13321-016-0174-y

Propiedades químicas y físicas

• Sensibilidad: moisture sensitive
• Punto de ebullición (°C): 205-210 °C
• Punto de fusión (°C): 63-65 °C
• Peso molecular: 264.430 g/mol
• Hydrogen Bond Donor Count: 1
• Hydrogen Bond Acceptor Count: 4
• Rotatable Bond Count: 6
• Exact Mass: 264.176 Da
• Monoisotopic Mass: 264.176 Da
• Topological Polar Surface Area: 47.900 Ų
• Heavy Atom Count: 17
• Formal Charge: 0
• Complexity: 204.000
• Isotope Atom Count: 0
• Defined Atom Stereocenter Count: 0
• Undefined Atom Stereocenter Count: 0
• Defined Bond Stereocenter Count: 0
• Undefined Bond Stereocenter Count: 0
• The total count of all stereochemical bonds: 0
• Covalently-Bonded Unit Count: 1

XLogP3

Referencias

1. Shuyi Zhu, Qian Zhao, Hao Fu, Hongwen Zhang, Haoming Bao, Zhou Le, Xiaotian Bao, Xinfeng Liu, Tao Zhang, Yue Li, Weiping Cai.  (2022)  Chemical Interface Damping-Induced Attenuation of Surface Plasmon-Enhanced Raman Spectroscopy.  ACS Photonics,      [PMID:] [10.1021/acsphotonics.2c00685]