Positive PR Developer - CMOS grade

Cat. No.: P1523723
주문 가능
등급 & 순도 CMOS grade ? CMOS grade — ultra-pure quality for CMOS semiconductor manufacturing. Use where the strictest metal/particle limits protect device yield.
Storage
Room temperature
Shipped In
Normal
★
크기
USA
독일 (EU)*
가격
수량
500ml
P1523723-500ml
주문제작 · 8~12주
US$49.90
Enter a quantity for the sizes you want to add.
🧪
이 등급을 선택하는 이유

CMOS grade CMOS grade 최소한의 기준선 간섭이 필요한 민감한 크로마토그래피 및 분석 워크플로우용.

🌡

보관 및 배송

Room temperature Normal 출고. 정확한 사양은 로트별 COA를 확인하세요.

📋

품질 문서

SDS, COA, 데이터시트, 사양서를 다운로드할 수 있습니다. 로트별 COA는 로트 번호 조회를 통해 확인할 수 있습니다.

📚

문헌적 근거

크로마토그래피, 유기 합성 및 교차 커플링 반응 분야의 동료 심사 논문 0편에서 인용되었습니다.

사양

사양 및 순도
CMOS grade
보관 조건
Room temperature
배송
Normal
등급
CMOS grade

문서

📋 안전 데이터 시트(SDS)

위험성, 취급, 보관 및 규제 준수를 포괄하는 종합 문서.

<<<<<<< HEAD SDS 다운로드 → ======= SDS 다운로드 → >>>>>>> release248-p3

✅ 분석 성적서(COA)

로트별 품질 데이터. 로트 번호를 입력하여 정확한 COA를 확인하세요.

COA 조회 →

📊 데이터시트

제품 사양 및 응용 분야에 대한 빠른 참조 요약.

데이터시트 보기 →

🔬 사양서

이 등급의 전체 품질 특성 및 합격 기준.

사양서 보기 →

고급 데이터

인증서(CoA, COO, BSE/TSE 및 분석 차트)
C of A & Other Certificates(BSE/TSE, COO):
Analytical Chart:
솔루션 계산기
리뷰

고객 리뷰

Application Protocols

Item-specific, validated protocols are Not specified for this item; refer to CoA/Spec Sheet and your resist vendor’s process guidelines.

General photolithography development workflow (literature/industry practice; not item-specific):

  1. Coat and soft-bake positive photoresist per supplier instructions; optionally apply bottom/anti-reflective coatings if required.
  2. Expose (UV/DUV/EUV) with calibrated dose; perform post-exposure bake (PEB) as specified for the resist.
  3. Develop using this product by puddle/spin or spray:
    • Control bath/wafer temperature (e.g., 20–25 °C typical) and time (e.g., 30–90 s typical). Optimize via FEM.
    • Ensure continuous refresh of developer over wafer surface; avoid puddle stagnation.
  4. Quench and rinse immediately with high-purity DI water; consider multi-stage rinse to minimize residues and watermarking.
  5. Dry via spin and/or Marangoni IPA dry as appropriate; inspect CDs and sidewalls (CD-SEM).
  6. Iterate time/temperature/agitation to meet CDU and LER targets; verify pattern integrity before etch or lift-off.

Cleanroom notes: Use dedicated, low-metal dispense lines and point-of-use filtration; monitor bath age and loading; document lot/CoA traceability.

Biological Roles

This product is a semiconductor processing chemical (photoresist developer) and does not have biological roles in cellular pathways or metabolism.

General note: Some developer chemistries in the industry are strong bases (e.g., quaternary ammonium hydroxides in water). These are handled strictly as industrial/ laboratory processing agents. No biological function, nutritional role, or signaling relevance is associated with this product. All uses are restricted to research and fabrication processes, as indicated by the Research Use Note: For research use only.

Buffer Applications

Not typically applicable. Positive PR developers are not used as biological buffers or pH-control reagents in biochemical assays. If a high-purity alkaline aqueous medium is needed for microfabrication, use this product only within lithography processes following your fab’s procedures. For any buffer preparation or biochemistry work, select appropriate biological buffer systems (e.g., phosphate, Tris, HEPES) instead.

Green Alternatives

While this product’s exact chemistry is Not specified for this item; refer to CoA/Spec Sheet, the developer space offers greener strategy options (general/industry literature):

• Replace or reduce quaternary ammonium hydroxides: TMAH is effective but acutely toxic; alternatives include carbonate/bicarbonate developers or choline hydroxide, which may offer improved toxicological profiles. Trade‑off: different dissolution kinetics, possible CD shift, and resist compatibility must be requalified. • Lower concentration and smarter process control: Using reduced-normality developers with optimized PEB and development time can maintain CDs while cutting chemical consumption. • Closed-loop recirculation with inline filtration: Minimizes waste and exposure, improves bath longevity; requires tight monitoring of loading and normality. • Point-of-use mixing from concentrates: Decreases packaging waste and transport footprint; needs high-purity DI and precise metering. • Rinsing efficiency: Optimizing DI water usage and employing cascade rinses reduce total effluent volume and conductivity load.

Comparison (literature, not item-specific):

  • TMAH-based: excellent CD control; high toxicity; mature supply chain; strong metal contamination control available.
  • Carbonate-based: improved EHS profile; may require different resist/process tuning; potential for slower dissolution or swelling in some platforms.
  • Choline-based: lower acute toxicity than TMAH; viscosity/wetting differences; emerging data for advanced resists.

Any substitution must be validated by FEM and line monitor data (CDU, LER, defectivity).

Pharmaceutical Uses

Not applicable. This product is a materials-science developer for microfabrication and is not intended for pharmaceutical formulation or manufacturing as an excipient. No pharmacopeial status is claimed or implied. Use is restricted to research and semiconductor processing contexts only.

Physical Properties

Item-specific physicochemical specifications (e.g., density, pH, conductivity, water content, metal ion content, refractive index) are Not specified for this item; refer to CoA/Spec Sheet.

General/literature context for positive PR developers (not item-specific): • Physical state: typically clear, colorless to slightly tinted aqueous solution. • Solubility: miscible with water; designed to wet Si/SiO2, Si3N4, many dielectric stacks, and PR films. • pH: often strongly basic for positive-tone development (commonly pH > 12 for alkaline developers; literature examples only). • Conductivity: high, consistent with ionic content in aqueous base (literature). • Typical operating temperature window: 20–25 °C for critical dimension control; some processes use 18–23 °C or 23–27 °C (literature guidance, not item‑specific). • Viscosity: near that of water for dilute aqueous developers (literature). • Volatility: low (aqueous system); negligible VOC vs organic solvents (literature).

Important: For process simulation and CDU tuning you will need the exact normality/molarity, metal ion levels, particles, and surfactant package. These parameters are not provided here and must be taken from the product’s CoA/Spec.

Quality and Grades

• Grade provided: CMOS grade (item-specific). This denotes suitability for semiconductor processing with stringent controls on ionic/metallic contamination, particles, and organics. • What CMOS grade typically implies (general/industry understanding; not item-specific specifications):

  • Ultra-low metal ions (e.g., Na, K, Ca, Fe, Cu) to minimize device leakage and mobility degradation.
  • Particle control to sub-100 nm regimes, often specified as counts per mL above a given size threshold.
  • TOC and organic residue control to protect resist profiles and downstream adhesion.
  • Compatibility with cleanroom packaging (e.g., HDPE or fluoropolymer) and point-of-use filtration. • Why it matters: Developer purity directly impacts line edge roughness (LER), footing/undercut behavior, and critical dimension (CD) uniformity. Trace metals can adsorb on wafer surfaces or catalyze defects; particles can seed pattern collapse or bridging. • Verification: For process qualification, obtain the lot-specific Certificate of Analysis detailing normality/molarity, particle counts, metal content (ppb), anion/cation profile, TOC, and microfiltration rating. Those figures are Not specified for this item; refer to CoA/Spec Sheet. • Stabilizers/additives: Any dissolution modifiers or surfactants, if present, will affect wettability and development kinetics. Additive identity and level are Not specified for this item; refer to CoA/Spec Sheet.
Reaction and Applications

Primary application: photolithographic development of positive-tone photoresists in microfabrication (CMOS, MEMS, microfluidics).

• Mechanistic overview (general/literature): Exposure (UV/DUV/EUV) creates acid or deprotects moieties in chemically amplified resists, increasing solubility of exposed regions in basic developer. Developer selectively dissolves the exposed polymer matrix, leaving the masked regions intact. • Process integration:

  • Post-exposure bake (PEB) to drive deprotection/diffusion (per resist datasheet), then develop in this product per your process window, followed by DI water quench/rinse and dry.
  • Typical development modes: puddle/spin, spray, immersion; selection affects uniformity and defectivity. • Metrics impacted: CD and CDU, LER/LWR, sidewall angle, footing/undercut, pattern collapse resistance. Additives and ionic strength can alter diffusion fronts and swelling. • Use cases:
  • Advanced logic and memory patterning steps matched to positive PR platforms (i-, g-, KrF, ArF; general context).
  • MEMS patterning where profile control and footing suppression are critical.
  • Lift-off processes where overdevelopment must be avoided to maintain undercut. • Practical tips (general):
  • Control bath temperature (±0.1–0.2 °C) and time to maintain CDU.
  • Employ point-of-use filtration (e.g., 0.05–0.1 µm) and periodic bath refresh to limit loading effects.
  • Minimize CO2 absorption in open tanks (can shift effective alkalinity) using lids/N2 blankets where appropriate. • Note: Composition and operating specifications for SKU P1523723 are Not specified for this item; consult CoA/Spec and your resist vendor’s recommendations.
Reaction Conditions

While not a chemical “reaction” in the synthetic sense, development conditions strongly determine lithographic outcomes. The following are general literature guidelines for positive PR development and are not item-specific instructions:

• Mode: puddle/spin or spray development; immersion less common for advanced CDs. • Temperature: typically 20–25 °C with tight control (±0.1–0.2 °C) to stabilize dissolution kinetics. • Time: often 30–90 s for many g-/i-/KrF/ArF positive resists; confirm by focus-exposure matrix and rate curves for your resist. • Agitation: controlled puddle dynamics or spray parameters to ensure fresh developer at the resist surface; avoid excessive shear that promotes pattern collapse. • Quench/rinse: immediate DI water rinse to arrest development and remove residues; multi-stage rinses improve defectivity. • Filtration: point-of-use filters (e.g., 0.05–0.1 µm) to minimize particles; recirculating baths require monitoring for loading and normality drift. • Materials: use high-purity, low-extractable containers and plumbing (HDPE, PTFE, PFA) to maintain CMOS-grade purity.

Note: Exact concentration/normality, additives, and optimal dwell times for SKU P1523723 are Not specified for this item; refer to CoA/Spec Sheet and your photoresist supplier’s process window.

Safety and Handling

Hazard classification specific to this item (GHS categories, pictograms, signal word, H/P statements) is Not specified for this item; refer to SDS.

General safety considerations for positive PR developers (literature/industry practice; not item-specific): • Many positive developers are strongly alkaline and can be corrosive to skin and eyes. Use appropriate PPE: chemical splash goggles, face shield for bulk handling, alkali-resistant gloves (e.g., butyl, nitrile), lab coat, and closed footwear. • Use in a clean, well-ventilated area or wet bench with appropriate exhaust. Avoid aerosol generation and splashes. • Incompatibilities: acids (exothermic neutralization), aluminum and some soft metals (corrosion), halogenated oxidizers, and CO2 uptake if highly basic (can shift effective normality). Store away from acid vapors and oxidizers. • First aid (overview; defer to SDS):

  • Skin/eye contact: immediate decontamination with copious water for ≥15 minutes; remove contaminated clothing; seek medical attention for eye exposures.
  • Ingestion/inhalation: rinse mouth; do not induce vomiting; move to fresh air; seek medical advice. • Spills: contain, neutralize carefully (e.g., with dilute acid) if allowed by site procedure, collect as alkaline waste; prevent release to drains if contaminated with resist/solvents. • Waste: segregate developer from acid and solvent waste; follow local regulations and facility EHS guidance. • Semiconductor cleanroom practice: use dedicated, low-metal tools and containers; filter handling lines to minimize particle addition.
Solvent Selection

This product is a developer formulation rather than a synthetic solvent. Traditional “solvent selection” does not directly apply. However, selection/compatibility considerations for process engineers include:

• Polarity/matrix interaction (general): Positive PR developers are aqueous and highly polar, optimized to solvate deprotected PR domains while minimizing attack on unexposed regions. Surfactant packages (if present) tune wetting and rinse efficiency. • Miscibility: Fully miscible with deionized water; typically followed by DI water rinse and spin-dry to arrest development and remove residues (literature practice). • Substrate compatibility: Compatible with Si, SiO2, Si3N4, many low‑k dielectrics, and common antireflective coatings; may attack certain Al-containing films and some metals depending on pH and complexants. Verify compatibility with your specific stack. • Alternatives/comparators (literature examples):

  • TMAH-based vs carbonate/bicarbonate-based developers: balance of dissolution rate, CD control, and toxicity profile.
  • Concentration/normality variants (e.g., “0.26 N” class) influence dissolution kinetics and LER; selection hinges on resist chemistry and target CDs. • Practical tip: Match developer family to the photoresist platform recommended by the resist vendor; run focus-exposure matrix (FEM) and development time sweeps to lock in CDU and sidewall angle.
Storage and Reconstitution

• Storage conditions (item-specific): Room temperature (per Product Data). Maintain in original, tightly closed container. • Shipping (item-specific): Shipped under normal conditions. • Reconstitution: Not applicable; supplied ready-to-use unless otherwise stated. Concentration and any dilution requirements are Not specified for this item; refer to CoA/Spec Sheet if a concentrate is supplied. • Handling/storage best practices (general for developers; not item-specific):

  • Store in clean, inert, low-extractable containers (e.g., HDPE, fluoropolymers). Avoid contact with acids and reactive metals.
  • Protect from CO2 ingress if a strongly basic developer to maintain normality; use intact seals and minimize headspace exchange.
  • Use point-of-use filtration and clean dispense hardware to preserve CMOS-grade purity.
  • Label with receipt and opening dates; follow fab policies for bath life and shelf life. • Stability/shelf life: Not specified for this item; refer to CoA/Spec Sheet. • Research Use Note: For research use only.
Structure and Identity

• Product type: positive photoresist (PR) developer formulation used in semiconductor/microfabrication processes. • Composition: Not specified for this item; refer to CoA/Spec Sheet. This product is a formulation rather than a single defined molecule. • CAS, InChIKey, SMILES, Molecular Formula, Molecular Weight: Not specified for this item; refer to CoA/Spec Sheet. • Structural features: As a formulated developer, it does not have a single 2D molecular structure to depict. Positive PR developers are commonly aqueous alkaline systems (literature examples include quaternary ammonium hydroxide solutions such as TMAH, or carbonate/bicarbonate developers), often with proprietary additives for dissolution rate control, surfactancy, and metal-ion sequestration. These examples are general industry knowledge and not item‑specific. • Functional role (process identity): selectively dissolves UV/DUV/EUV-exposed regions of positive-tone photoresists by promoting deprotection and base-catalyzed dissolution of the exposed polymer matrix, enabling pattern transfer in lithography. • Category: Materials Science; CMOS processing auxiliary (developer). • Notes: When needed for regulatory or process qualification, request the exact composition, impurity profile, and ionic contamination limits from the CoA/Spec for SKU P1523723.

Synthetic Utility

Not directly applicable as a reagent in organic synthesis. Positive PR developers function as process chemicals for pattern development rather than as building blocks, catalysts, or solvents in synthetic transformations.

Related fabrication utility (general): • Pattern definition: Enables selective removal of exposed resist to transfer patterns into underlying films by etching or deposition steps. • Process sequencing: Critical in lithographic stacks before dry/wet etch, electroplating, or lift-off. Development uniformity affects downstream etch bias and feature fidelity.

For synthetic chemistry needs (bases, nucleophiles, solvents), choose defined reagents with known composition and reactivity profiles rather than a lithographic developer formulation.

Target Specificity

Not applicable. This product is not a biological reagent or antibody and does not have targets, epitopes, clones, or species reactivity. It is a materials processing chemical for photoresist development.

등급 선택에 도움이 필요하신가요?

당사의 등급 선택 가이드는 카탈로그의 모든 변형 제품에 대해 순도, 안정제 상태 및 용도 적합성을 다룹니다.

CMOS grade 등급 가이드 보기 →

Shall we send you a message when we have discounts available?

Remind me later

Thank you! Please check your email inbox to confirm.

Oops! Notifications are disabled.