DPh-DNTT , CAS No.1310198-13-0

CAS: 1310198-13-0 Cat. No.: D1504921

Storage

Room temperature

Specifications

Storage

Room temperature

Application Protocols

General protocol for DPh-DNTT thin-film transistors (literature/typical; adjust to your tools and safety policies):

• Substrate prep: Clean heavily doped Si/SiO₂ wafers (piranha or sequential solvent sonication), dry, and treat with HMDS vapor (120 °C, 1 h) or OTS (1–2% in anhydrous solvent) to form a hydrophobic SAM. Rinse and bake to complete silanization.
• Semiconductor solution: Prepare 10 mg mL⁻¹ DPh-DNTT in chlorobenzene or anisole; heat to 80–100 °C with stirring until dissolved. Filter hot through 0.2 µm PTFE.
• Coating: Spin at 1500–2500 rpm for 45 s on a pre-warmed substrate (60–80 °C). Alternatively, blade coat on a 90–110 °C stage at 1–5 mm s⁻¹.
• Anneal: Bake at 100–140 °C for 15–30 min under N₂ to improve crystallinity and reduce traps.
• Contacts: Define Au source/drain (e.g., 30–50 nm) by lift-off or shadow mask; top-contact deposition can follow semiconductor coating. Use contact SAMs if needed to lower injection barrier.
• Encapsulation: Optional parylene C or ALD Al₂O₃ to enhance environmental stability.
• Characterization: Measure transfer/output curves in N₂. Extract µ, Vth, SS, and on/off ratio. Inspect films by polarized microscopy/AFM for grain size and terraces.

Notes:

• Parameters above are general literature guidance, not guaranteed for this SKU. Optimize solvent, concentration, and thermal steps to your dielectric and channel geometry.

Biological Roles

This product is an organic electronic material rather than a biomolecule. It does not have a typical biological role, metabolic pathway, or signaling function. Any interactions with biological systems would be incidental (e.g., cytotoxicity screening for device biocompatibility) and are outside the intended scope.

• No enzyme/cofactor activity, receptor binding, or metabolic role is associated with DPh-DNTT (literature/general).
• For cell-contacting devices or biointerfaces, users should perform independent biocompatibility assessments appropriate to their application and regulatory framework.

Research use only: As indicated in Product Data, this material is supplied strictly for research and laboratory use; it is not intended for use in humans or for clinical/diagnostic applications.

Buffer Applications

Not typically applicable. DPh-DNTT is a hydrophobic semiconductor and is not used to prepare aqueous buffers or biological buffer systems. For practical use, refer instead to the Solvent Selection, Reaction & Applications, and Application Protocols sections focused on thin-film processing.

Green Alternatives

Greener processing considerations focus on solvent and energy use (literature/general):

• Replace chlorinated aromatics:
  • Greener options such as anisole, toluene, p-cymene, or limonene-based solvent blends can often dissolve DPh-DNTT at elevated temperatures. These reduce halogenated solvent waste and toxicity.
• Lower-temperature processing:
  • Utilize additives or solvent mixtures to enable film formation at lower bake temperatures, reducing energy consumption. Control drying kinetics to promote large-grain growth without high anneal temperatures.
• Deposition choice:
  • Where feasible, solution coating with greener solvents can substitute for vacuum thermal evaporation, lowering energy/capital footprint. However, VTE may yield superior purity and film order; trade-offs should be evaluated.

Illustrative comparison (literature; qualitative):

• Chlorobenzene/o-DCB: high solubility; good film uniformity; higher toxicity and regulatory burden; halogenated waste stream.
• Anisole/toluene: moderate solubility; faster drying; improved EHS profile; may require heating and concentration tuning to avoid defects.
• Limonene/cyclopentanone: bio-based/low-tox; variable solubility; slower drying may aid grain growth but can complicate uniformity.

Best practices:

• Use closed or semi-closed coating systems to minimize VOC emissions.
• Implement solvent recovery and recycling where possible.
• Validate device metrics (mobility, on/off ratio, threshold voltage) under greener solvent conditions to ensure parity with legacy processes.

Note: Solvent choice must be verified for your specific equipment and design rules.

Pharmaceutical Uses

Not applicable as a therapeutic agent or excipient. DPh-DNTT is an organic semiconductor intended for research in materials science and device fabrication (e.g., OFETs). It has no pharmacopeial monograph and is not formulated for clinical use. Any discussion of pharmaceutical applications would be outside the scope of this product’s intended research-only use.

Physical Properties

Item-specific specifications:

• Appearance: Not specified for this item; refer to CoA/Spec Sheet.
• Molecular weight: Not specified for this item; refer to CoA/Spec Sheet.

Literature/general properties for DPh-DNTT-class materials (not product specifications):

• Physical state: high-melting, thermally robust polycyclic aromatic solid; typically yellow to orange powders or flakes.
• Thermal behavior: exhibits excellent thermal stability suitable for vacuum thermal evaporation; decomposition temperatures commonly well above 300 °C for DNTT derivatives (literature).
• Solubility: sparingly soluble in nonpolar and moderately polar solvents at room temperature; solubility can improve in high-boiling aromatic/chlorinated aromatic solvents (e.g., toluene, chlorobenzene, o-dichlorobenzene, 1,2,4-trichlorobenzene) upon gentle heating (literature). Often processed from solutions ca. 5–20 mg/mL at elevated temperature, or from the vapor phase.
• Optical properties: strong π–π* absorption in the near-UV/visible; thin-film absorption onset often in the ~520–560 nm range for DNTT derivatives (film-dependent; literature). Photoluminescence observable in the visible range.
• Electrical: p-type organic semiconductor; thin-film hole mobilities for DPh-DNTT reported up to the 1–10 cm² V⁻¹ s⁻¹ range under optimized device fabrication and substrate treatments (literature). Exact performance is device- and process-dependent.

Important: Do not treat the above as guaranteed specifications for this SKU. Always verify item-specific data on the CoA/Spec Sheet.

Quality & Grades

Item-specific quality information:

• Grade/purity: Not specified for this item; refer to CoA/Spec Sheet.

Context for materials science users (general guidance):

• Electronic/semiconductor grade: For organic thin-film transistors (OTFTs), logic circuits, sensors, and photonics, very low ionic/metallic contamination and minimal oxidative byproducts are critical. Trace metals, residual catalysts (e.g., Pd from cross-coupling), and halides can degrade mobility, increase hysteresis, and elevate off-currents.
• Purification practices: High-performance materials such as DPh-DNTT are commonly purified by gradient temperature sublimation under high vacuum to remove non-volatile and ionic impurities after synthetic workup and chromatographic purification. Multiple resublimations may be used for device-grade material.
• UV/Vis cleanliness: For solution processing and optical characterization, low baseline absorbance and absence of scattering particulates (verified by 0.2 µm filtration) are favored.
• Batch-to-batch consistency: Lot-specific film morphology and grain size can influence charge transport. Review CoA data (e.g., NMR, HRMS, HPLC area %, residual metal analysis) to correlate with your device metrics.
• Stabilizers/additives: None are typically added to small-molecule semiconductors; if any processing aid were present, it would be listed explicitly. For this item, stabilizers are Not specified; refer to CoA/Spec Sheet.

Recommendation: For publication-quality OTFT data, consider post-purchase thermal gradient sublimation in a clean apparatus to achieve the lowest trap density.

Reaction & Applications

Primary use (materials science; literature/general):

• DPh-DNTT is a high-performance p-type organic semiconductor for thin-film electronic devices, including organic field-effect transistors (OFETs/OTFTs), logic inverters, ring oscillators, chemical sensors, and phototransistors. Phenyl substitution on DNTT promotes solution processability while retaining excellent π–π stacking and high intrinsic mobility.

Application highlights and practical tips:

• Thin-film transistors (TFTs): Employed as the active semiconductor in bottom-gate/bottom-contact or top-contact architectures. Reported mobilities for DPh-DNTT thin films can reach 1–10 cm² V⁻¹ s⁻¹ under optimized deposition and dielectric surface treatment (e.g., HMDS or SAM-modified SiO₂) with low threshold voltages (literature; process-dependent).
• Deposition routes: (i) Vacuum thermal evaporation (VTE) for highly ordered, pinhole-free films; (ii) Solution processing (spin coating, blade/slot-die coating, inkjet printing) from aromatic solvents at 5–20 mg/mL, commonly with mild thermal annealing (80–150 °C) to enhance crystallinity.
• Interface engineering: Surface energy and molecular orientation are critical. Use octadecyltrichlorosilane (OTS), hexamethyldisilazane (HMDS), or phosphonic-acid SAMs on high-k dielectrics to reduce trap density and promote edge-on packing.
• Contact engineering: Gold source/drain often preferred; self-assembled monolayers on contacts can reduce injection barriers.
• Encapsulation: Optional barrier coatings (parylene, ALD oxides, flexible laminates) can improve environmental stability against O₂/H₂O.

Synthesis note: In research labs, DPh-DNTT is commonly accessed by cross-coupling onto a dibromo-DNTT core (e.g., Suzuki–Miyaura) followed by purification and gradient sublimation (literature). This is background, not a use of this SKU as a reagent.

Reaction Conditions

This section provides general processing conditions for device fabrication with DPh-DNTT; these are literature-derived guidelines, not specifications for this SKU.

Vacuum thermal evaporation (VTE):

• Source temperature: Adjust to achieve 0.1–1.0 Å s⁻¹ deposition rate (exact temperature depends on crucible geometry and vacuum level). High vacuum (~10⁻⁶–10⁻⁷ mbar) recommended.
• Substrate temperature: Room temperature to ~120 °C; mild heating can enhance crystallinity and domain size.
• Film thickness: 20–60 nm typical for OFET channels; optimize per dielectric and device architecture.

Solution processing:

• Solvents: toluene, anisole, chlorobenzene, o-DCB (see Solvent Selection).
• Concentration: commonly 5–20 mg mL⁻¹; warm to dissolve fully; filter (0.2 µm PTFE) before coating.
• Spin coating: 1000–3000 rpm for 30–60 s; hot-plate anneal 80–150 °C for 10–30 min to promote ordering.
• Blade/slot-die coating: 60–120 °C stage; slow coating speeds and high-boiling cosolvents can encourage large-grain films.

Substrate/interface preparation:

• Clean Si/SiO₂ or flexible substrates thoroughly (solvent wash + UV–ozone/oxygen plasma as compatible).
• Apply HMDS or OTS SAMs to reduce trap density and tune surface energy.

Performance notes:

• Encapsulation or inert processing can mitigate ambient p-doping and hysteresis.
• Contact engineering (e.g., Au with thiol/phosphonic SAMs) can reduce barriers and improve linear regime behavior.

Always calibrate these conditions on your equipment and verify electrical metrics post-fabrication.

Safety & Handling

Regulatory/SDS notes (Product Data):

• Signal word: Not specified for this item; refer to SDS.
• H-statements / GHS classification / pictograms: Not specified for this item; refer to SDS.

General safety guidance for polycyclic organic semiconductors (literature/best practice):

• Hazards: Combustible organic solid; dust may form explosive mixtures with air. Mechanical irritation possible to eyes/respiratory tract if dust is generated. Thermal decomposition can yield irritating fumes (SOx/COx).
• PPE: Wear safety glasses with side shields, lab coat, and appropriate gloves (e.g., nitrile). Use a dust mask/respirator if handling fine powders or during weighing in open vessels. Handle in a fume hood when heating or preparing solutions.
• Handling: Avoid dust generation; use antistatic measures when dry-transferring. When formulating inks/solutions, filter through 0.20–0.45 µm PTFE to remove particulates. For thin-film applications, consider cleanroom protocols to minimize particle contamination.
• Incompatibilities: Strong oxidizers; strong electrophiles; excessive heat/open flame. Avoid prolonged exposure to UV/strong light during processing to limit photooxidation.
• First aid (overview): If inhaled, move to fresh air; seek medical attention if symptoms persist. In case of eye/skin contact, rinse with water for several minutes; remove contaminated clothing. If ingested, rinse mouth and seek medical advice. Refer to SDS for authoritative instructions.
• Waste: Dispose of solid residues and solvent solutions as halogenated or non-halogenated organic waste per local regulations.

Always consult the item-specific SDS before use.

Solvent Selection

Polarity and miscibility (literature/general for DPh-DNTT-type semiconductors):

• Nonpolar, hydrophobic aromatic semiconductor; insoluble in water. Shows workable solubility in aromatic and chlorinated aromatic solvents, especially at elevated temperature.
• Common processing solvents: toluene, anisole, chlorobenzene (CB), o-dichlorobenzene (o-DCB), 1,2,4-trichlorobenzene (TCB). For greener choices, see anisole, cyclopentanone, or limonene-based blends.

When to choose which solvent (general guidance):

• Toluene/anisole: lower toxicity/greener profile; suitable for spin-coating/inkjet if solubility allows; may require heating (60–100 °C) and modest concentrations (5–15 mg/mL).
• Chlorobenzene: balances solubility and volatility; often used for uniform thin films with moderate drying times; spin coating or blade coating at room temperature or mildly warmed plates.
• o-DCB/TCB: high-boiling options enabling slow drying and large-grain growth; useful for blade/zone casting and printing; ensure adequate ventilation and higher temperature processing.
• Mixed solvents/additives: small fractions of high-boiling cosolvents or alkylbenzenes can tune film morphology and suppress coffee-ring effects.

Comparison snapshot (literature/general):

• Volatility: toluene > anisole ≈ CB > o-DCB > TCB.
• Toxicity/regulatory: anisole and toluene are generally preferred over chlorinated solvents; o-DCB/TCB present higher EH&S burdens.

Note: Item-specific solubility parameters are Not specified for this item; refer to CoA/Spec Sheet. Validate solvent choice by small-scale solubility and film tests.

Storage & Reconstitution

• Storage conditions (Product Data): Room temperature.
• Shipped in: Not specified for this item; refer to CoA/Spec Sheet.
• Appearance: Not specified for this item; refer to CoA/Spec Sheet.

Best practices (general):

• Keep tightly closed in a clean, dry container. Store in the dark or amber glass to minimize photooxidation. For long-term stability, consider desiccator storage or inert-atmosphere cabinet.
• Minimize repeated opening to avoid moisture/air exposure; allow vial to equilibrate to room temperature before opening to prevent condensation.

Reconstitution/solution preparation (general guidance for processing):

• Dissolve in toluene, anisole, chlorobenzene, or o-dichlorobenzene. Gentle heating (60–100 °C) and stirring may be required. Filter through 0.20 µm PTFE syringe filter before deposition to remove particulates.
• For inkjet or blade coating, prepare solutions at application-specific viscosities; validate stability over intended pot life.

Freeze–thaw guidance:

• Not applicable; store as solid at room temperature. If solutions are prepared, store tightly sealed and protected from light; re-filter before use if precipitates form.

Research use note (Product Data): For research use only.

Refer to the item-specific CoA and SDS for definitive storage, stability, and handling information.

Structure & Identity

• Product name: DPh-DNTT (commonly: 2,9-diphenyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene) (literature naming)
• SKU: D1504921
• CAS: 1310198-13-0 (Product Data)
• Category: Materials science – organic semiconductor (Product Data)
• Molecular formula: Not specified for this item; refer to CoA/Spec Sheet.
• Molecular weight: Not specified for this item; refer to CoA/Spec Sheet.
• SMILES: Not specified for this item; refer to CoA/Spec Sheet.
• InChIKey: Not specified for this item; refer to CoA/Spec Sheet.

Structural features (literature/general):

• Polycyclic, fully conjugated, planar/aromatic core derived from DNTT (dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene), a fused thiophene–thiophene (thieno[3,2-b]thiophene) spine annulated by two naphthalene units.
• Two phenyl substituents at the 2,9-positions of the DNTT core (“DPh-”), increasing steric protection at the long-axis ends while retaining π–π stacking propensity.
• Functional groups: extended polyaromatic system containing two thioether-like sulfur atoms embedded in fused thiophene rings; no heteroatoms capable of hydrogen bonding; neutral molecule.

2D description in words (literature/general):

• Imagine a central thieno[3,2-b]thiophene (two fused thiophene rings, sharing the 3,2-edge) flanked on both sides by peri-fused naphthalene units to yield a rigid, elongated acene–thienoacene framework. Phenyl rings are attached at the 2 and 9 positions along the long molecular axis, roughly co-planar or slightly twisted relative to the core depending on crystal packing. The overall structure is highly anisotropic and optimized for p-type charge transport via π–π stacking.

Note: Identity strings and elemental analysis for this catalog item should be confirmed against the item-specific CoA/Spec Sheet.

Synthetic Utility

As a target functional material, DPh-DNTT is typically the end product rather than a synthetic building block. Accordingly, its direct use as a reagent in organic synthesis is limited. However, understanding its reactivity can assist with post-deposition processing and long-term stability (literature/general):

• Chemical stability: The fused thienoacene core is relatively resistant to electrophilic substitution under mild conditions; peripheral phenyl groups add steric protection. Strong oxidants or radical initiators can degrade the π-system.
• Thin-film chemical modification: Surface doping (e.g., with strong Lewis acids or oxidants) can modulate work function and conductivity, but may compromise stability.
• Processing compatibility: Stable to brief thermal anneals (80–150 °C) and common organic solvents used in multilayer stacks (e.g., orthogonal solvents for dielectrics or encapsulants).

Synthesis background (for context only):

• Commonly assembled by cross-coupling reactions (e.g., Suzuki–Miyaura) between aryl boronates and dibromo-DNTT, followed by oxidative cyclodehydrogenation in some routes, and finished with chromatographic purification and vacuum sublimation. These steps inform likely residuals to scrutinize in quality control (e.g., Pd, P-ligands, halides).

Conclusion: Treat DPh-DNTT as a functional semiconductor layer rather than a synthetic intermediate.

Target Specificity

Not applicable. This product is a small-molecule semiconductor, not a biochemical probe, antibody, or ligand. There is no target antigen, enzyme, receptor, clone, or species reactivity associated with its use.