Understanding ALD Precursor Chemistry: Element Map, Ligand-Based Taxonomy, Typical Pairings, and Troubleshooting (with a Co-Reactant/Precursor List)
Understanding ALD Precursor Chemistry: Element Map, Ligand-Based Taxonomy, Typical Pairings, and Troubleshooting (with a Co-Reactant/Precursor List)
Part A | Getting to Know ALD
ALD (Atomic Layer Deposition) is a vapor-phase thin-film deposition method. It works by alternately introducing precursor A and co-reactant B in sequence, where each step proceeds via a surface self-limiting (self-saturating) reaction. As a result, the film grows in cycles, enabling angstrom-level (Å-level) thickness control and extremely high conformality, making ALD especially suitable for high-aspect-ratio / 3D structures.
A simple analogy: think of it as “painting a wall”
1. In step 1, you “paint” only until you can’t paint any more (surface sites are saturated), then stop.
2. Remove excess “paint/brush/solvent” (purge).
3. In step 2, switch to a different “brush” to swap the surface terminating groups.
4. Repeat the cycles—once steady growth is reached, the thickness is approximately linear with the number of cycles.
Part B | “Element Map”: What Elements Are Involved in ALD Precursors?
A common question is: What elements can ALD deposit? This is tied to what type of film you want, because the film type determines which “element combinations” must be introduced.
B1 | First classify by film type (i.e., anion / non-metal element)
ALD can cover many film classes (oxides, nitrides, sulfides, metals, etc.), which is one key reason it is widely used in both industry and research.
Film type | Key non-metal element(s) | Common co-reactants / reaction environment | Where you’ll typically see it |
Oxides | O | H₂O, O₃, O₂ / oxygen plasma | Dielectrics / passivation / encapsulation / barrier layers |
Nitrides | N | NH₃ (thermal) or N₂/H₂/NH₃ plasma | Diffusion barriers; conductive nitrides |
Sulfides / selenides / tellurides | S / Se / Te | H₂S (etc.) or plasma; sometimes multi-step cycles | 2D materials / optoelectronics / catalysis |
Fluorides | F | Fluorine-containing reactants (system-dependent) | Optics; specialty insulation / etch-related |
Metals / alloys | — | Reducing co-reactants (thermal / plasma) | Electrodes, seed layers, catalytic layers |
Organic / hybrid (extended) | C/H, etc. | Closer to MLD (Molecular Layer Deposition) | Surface functionalization / organic–inorganic hybrids |
Note: The “common co-reactants” above are conceptual exemplars. Real, workable chemistries depend on the material, temperature window, and tool configuration. Co-reactants and energy enhancement (e.g., plasma, ozone) can significantly change the feasible window and the resulting film properties.
B2 | Then classify by “metal center element”: which elements show up most often in ALD precursors?
In principle, many elements are possible, but the most frequent ones in engineering practice and the literature are driven by needs such as dielectrics / high-k, diffusion barriers, metal electrodes, transparent conductors, and oxide semiconductors.
Application scenario | Common ALD films | High-frequency metal elements |
Dielectric / passivation / barrier | Al₂O₃, HfO₂, ZrO₂, TiO₂… | Al, Hf, Zr, Ti… |
Diffusion barrier / conductive nitrides | TiN, TaN, WN… | Ti, Ta, W… |
Metal electrodes / seed layers | Ru, Co, Pt, Ir metallic films | Ru, Co, Pt, Ir… |
Transparent conductors / oxide semiconductors | In₂O₃, ITO (In–Sn–O), ZnO… | In, Sn, Zn, Ga… |
Functional coatings (energy / catalysis / interfaces) | Ultrathin oxide coatings; catalytic metal “dot” layers, etc. | Al, Ti, Zr, Pt, Pd… |
A practical reality: Many “desired films” turn out to be difficult or impossible—not because of the tool, but because a suitable precursor does not exist, or the precursor/co-reactant pairing cannot achieve truly self-limiting surface reactions. That is why precursor chemistry has been emphasized for so long in ALD research.
Part C | What Is a Precursor? Read the Name via “Metal Center + Ligands”
Treat a precursor as a chemical package that is volatile and controllably reactive:
Precursor ≈ (the element you want to deposit: the metal/center atom) + (a set of ligands)
Ligands are not there to “become the film.” Their job is to give the molecule three capabilities:
1. Deliverability into the chamber (sufficient volatility).
2. Stability in the source bottle / lines (thermal stability; no premature decomposition).
3. Self-limiting surface reactivity on the substrate (appropriate reactivity, and byproducts must be volatile/removable).
Part D | The “Four Hard Requirements” for ALD Precursors
Core ALD requirements include volatility, thermal stability, reactivity, self-limiting behavior, and removable byproducts—plus safety, availability, and tool constraints.
D1 Volatility / transport (can you deliver enough dose?)
- If vapor pressure is insufficient → pulse cannot deliver enough dose → reaction does not saturate (GPC won’t reach the expected value).
D2 Thermal stability (does it fail in the bottle/lines?)
- Self-decomposition / polymerization → line clogging, particles, parasitic CVD-like deposition.
D3 Surface reactivity and “true self-limiting” behavior
- Self-limiting growth comes from surface site saturation, not from “slow reaction kinetics.”
- A standard validation is: as dose/residence time increases, the growth per cycle (GPC) approaches a saturation plateau.
D4 Film purity and safety / compliance
- Ligand-derived residues (C/N/Cl, etc.) can affect electrical/optical performance and reliability.
- Halide routes are often highly reactive, but may introduce corrosion, halogen residues, and equipment/material compatibility concerns—these must be judged in context of the application.
Part E | How to Classify ALD Precursors: by “Ligand Family / Bond Type”
Precursor family (ligand type) | Intuitive impression | Typical advantages | Common risks / notes |
Halides (M–Cl, etc.) | “Inorganic salt route with strong reactivity” | Often strong reactivity; classic/established chemistries | Must evaluate corrosion, halogen residues, tool compatibility |
Alkyl / organometallic (M–C) | “Very reactive; often used for oxides” | Can enable excellent self-limiting behavior (many classic cases) | Possible carbon residues; sensitive to water/oxygen |
Alkoxides / metal alkoxides (M–OR) | “Milder oxide route” | Sometimes easier to control byproducts | Volatility/stability vary widely |
Metal amides / amino (amido, M–NR₂) | “Common in metal/nitride systems” | Often improves volatility | Potential N/C residues; depends on co-reactant choice |
β-Diketonates / chelates | “Stable but may be less reactive” | Good stability; tunable | If reactivity is insufficient, self-limiting behavior can be lost or the window narrows |
Cp (cyclopentadienyl) family | “Classic organometallic scaffold” | Common for many metals | May require stronger oxidation/reduction steps to proceed cleanly |
Carbonyls (M–CO), etc. | “May have excellent volatility” | Useful for some metal depositions | Stability and pathways are highly system-dependent |
Part F | Examples of “Typical Pairings”
Case 1: Al₂O₃ (aluminum oxide) — the classic starter system
- Element sources: Al from trimethylaluminum (Trimethylaluminum, TMA); O from H₂O
- Why it is self-limiting: TMA reacts with surface –OH until sites saturate; then H₂O converts surface termination back to –OH for the next cycle
- What to focus on: a textbook-level example of self-limiting half-reactions; surface chemistry has been studied very systematically
Case 2: HfO₂ (hafnium oxide, high-k dielectric)
- Element sources: Hf precursor (halide route or organometallic/amido routes, etc.) + oxidant (H₂O/O₃/plasma)
- What to focus on: oxidant choice affects film density, impurities, and “gentleness” toward underlying materials (especially for sensitive 2D materials)
Case 3: TiN (titanium nitride, common barrier/conductive nitride)
- General idea: metal precursor + nitrogen source (NH₃ or plasma)
- What to focus on: nitrogen source and energy enhancement often determine the temperature window and impurity control (C/N/H residues, etc.)
Case 4: Metal W/Mo (tungsten / molybdenum) and other metal films
- General idea: common halides (e.g., MClₓ / MF₆, etc.) paired with a reducing agent or multi-step cycles to achieve self-limiting growth
- What to focus on: the difficulty and mechanistic complexity of metal ALD is a major theme in precursor-design reviews
Case 5: PEALD (Plasma-Enhanced ALD) for low temperature / special materials
- Value: plasma “strengthens” the co-reactant, lowering temperature and expanding the material/property space
- Risk: stronger is not always better—plasma can cause damage and alter conformality; choices must match structure and underlying materials. Active species have short lifetimes and can recombine/deplete in high-aspect-ratio features → insufficient deep-feature dose (so PEALD can sometimes be less conformal than thermal ALD).
Part G | A “Selection Decision Tree”
- Do you need an oxide / nitride / metal? (Decide film type first)
- How high a temperature can the substrate tolerate? (Polymers / BEOL often require low temperature)
- Can you use plasma or ozone? (Energy enhancement can expand the window, but evaluate damage/conformality)
- Can you accept halide routes? (Corrosion, residues, and tool material compatibility)
- Do you prioritize conformality or purity/electrical performance more? (Trade-off between “highly reactive” vs “milder” chemistries)
- Finally, return to the four hard requirements and check them one by one (transport / stability / self-limiting behavior / impurities & safety)
Part H | Common Failure Modes & Troubleshooting
Symptom | Most likely cause | What to check/adjust first | The ALD logic behind it |
GPC is low and unstable | Insufficient dose / insufficient transport / not saturated | Increase pulse length / residence time; check vapor pressure, source temperature, carrier gas and lines | Self-limiting growth requires surface-site saturation |
GPC rises sharply with temperature | Precursor thermally decomposes → CVD-like growth | Lower temperature; switch to a more thermally stable precursor; shorten residence time / reduce excessive dose | At high temperature you may enter a decomposition / non-self-limiting regime |
Film C/N/Cl content is high | Incomplete reaction / co-reactant not strong enough / insufficient purge | Use stronger oxidation/reduction conditions; extend purge; check surface termination state | Ligand removal and volatile byproduct desorption are essential |
Conformality worsens (non-uniform deep holes/trenches) | Short-lived reactive species / plasma directionality / recombination limits | Reduce energy-enhancement intensity or switch to a thermal route; optimize pulse and residence time | ALD’s advantage comes from sequential self-limiting reactions + transport |
Tool corrosion / powdering / clogging | Corrosive or polymerizing precursor/byproducts | Verify material compatibility; adjust source/line temperatures; evaluate halide routes carefully | Feed/transport engineering is as important as chemistry |
Part I | Recent Trends: Why “New Precursor Chemistry” Matters More Than Ever
- More 3D structures → stronger need for ALD’s conformality and interface control
- More low-temperature and sensitive substrates → greater reliance on energy enhancement and milder / more efficient precursor design
- More complex materials (multi-component / non-traditional) → “lack of suitable precursors” is still one of the biggest bottlenecks
Table J1 | ALD Co-reactants / Process Gases / Plasmas & Cleaning Gases
Category | Name | CAS | Function (typical role in ALD) |
Oxygen source / mild oxidant | Water (H₂O) | Classic co-reactant for oxide ALD (e.g., Al₂O₃, HfO₂, TiO₂, etc.) | |
Strong oxidant | Hydrogen peroxide (H₂O₂) | Stronger oxidation; can improve film formation and impurity control for some metal oxides | |
Oxidizing / plasma gas | Oxygen (O₂) | 7782-44-7 | Oxygen source for thermal ALD or PEALD (often used with plasma) |
Strong oxidant | Ozone (O₃) | Highly active oxygen source; often used for low-temperature / high-quality oxides or systems sensitive to organic residues | |
Oxidizing / weak nitrogen contributor | Nitrous oxide (N₂O) | 10024-97-2 | Can serve as an oxygen source (sometimes introduces N-related effects); used for specific oxides/oxynitrides |
Nitrogen source / nitridant | Ammonia (NH₃) | 7664-41-7 | Typical co-reactant for nitride ALD (e.g., TiN, TaN, etc.) |
Reducing / metallization gas | Hydrogen (H₂) | 1333-74-0 | Reduces metal precursors; promotes metal film deposition (common in noble-metal / metallization processes) |
Sulfur source / sulfidant | Hydrogen sulfide (H₂S) | 7783-06-4 | Co-reactant for sulfide ALD (e.g., ZnS, MoS₂ routes, etc.) |
Phosphorus source / phosphidant | Phosphine (PH₃) | 7803-51-2 | P source for phosphide or P-doping ALD routes (highly hazardous specialty gas) |
F-containing plasma / cleaning gas | Carbon tetrafluoride (CF₄) | 75-73-0 | Generates F•/CFₓ in plasma for chamber cleaning and dry etch (depends on tool and recipe) |
Chamber cleaning gas | Nitrogen trifluoride (NF₃) | 7783-54-2 | Common remote clean gas in semiconductor fabs (frequent in ALD tool maintenance) |
Inert carrier / purge gas | Argon (Ar) | 7440-37-1 | Carrier and purge (Purge); also a plasma feed gas |
Inert carrier / purge gas | Helium (He) | 7440-59-7 | Carrier and purge; improves mass transfer / thermal management (tool-dependent) |
Table J2 | Representative ALD Precursor List
Table (1) | Organometallic / Main-Group Precursors (Halide-Free Routes: alkyl/alkoxide/amino/amido/imido and small molecules containing B/P/Si)
Category | CAS No. | Aladdin Cat. No. | Name | Spec / Purity | Key features or applications |
Al | Alkoxide (alcoholate) | 555-31-7 | Aluminum triisopropoxide | Suitable for synthesis | Al alkoxide as an Al source; more commonly used in sol–gel/precursor synthesis and alumina-material routes; also explored in some ALD/CVD precursor screening (relatively mild reactivity). | |
Al | Alkoxide (alcoholate) | 555-75-9 | A151738 | Aluminum ethoxide | ≥98% | Al alkoxide Al source; suitable for precursor synthesis, alumina routes (sol–gel), and exploration of some halide-free deposition chemistries. |
Al | Metal alkyl | 75-24-1 | Trimethylaluminum (TMA) | Packaged for deposition systems | Classic precursor for Al₂O₃ ALD (commonly paired with H₂O/O₃, etc.); pyrophoric/highly reactive—system packaging is designed for deposition-tool delivery. | |
Al | Metal alkyl (solution) | 97-93-8 | Triethylaluminum solution | 25 wt.% in toluene | Al alkyl source supplied as a solution; facilitates lab dosing and reduces instantaneous exposure risk; used for precursor chemistry and development of selected deposition routes. | |
Ga | Metal alkyl | 1115-99-7 | T475958 | Triethylgallium | Packaged for deposition systems | Ga source (common family in MOCVD/ALD/PEALD); for GaN, Ga₂O₃ and related material development; system packaging supports direct tool use. |
Ga | Metal alkyl | 1445-79-0 | T432113 | Trimethylgallium | Packaged for deposition systems | Highly reactive Ga source; for GaN/Ga₂O₃ (thermal and plasma-assisted processes); system packaging supports safer, controlled delivery. |
Zn | Metal alkyl | 557-20-0 | Diethylzinc | Packaged for deposition systems | One of the classic ZnO ALD precursors (often with H₂O); extendable to ZnS, etc.; pyrophoric—requires compliant gas lines and exhaust treatment. | |
Zn | Metal alkyl (solution) | 544-97-8 | Dimethylzinc solution | 2.0 M in toluene | Zn alkyl source in solution; used for ZnO-route research and feed strategy optimization (solution delivery/safety/dosing convenience). | |
B | Boron–oxygen / B-doping precursor (borate ester) | 121-43-7 | Trimethyl borate | Suitable for synthesis | Volatile borate ester B source; used for boron oxide films and B-doping precursor chemistry/process development. | |
B | Alkyl boron (solution) | 97-94-9 | Triethylborane solution | 2.0 M in diethyl ether | Boron alkyl source; used for B-doping/boride or B-containing film route exploration; solution form supports ratio control and reaction management. | |
B | Aminoborane (boron amine compound) | 4375-83-1 | Tris(dimethylamino)borane | ≥98% | Aminoborane B source featuring B–N character; used for B/N-containing precursor chemistry and BN/doping route exploration. | |
P | Phosphorus source (phosphate ester) | 512-56-1 | Trimethyl phosphate | Analytical standard | P source / organophosphorus precursor; used for P-containing oxides and P-doping process/mechanism studies (better suited when impurity control is stringent). | |
P | Ligand/additive (strong Lewis base) | 1608-26-0 | Hexamethylphosphoramide (HMPT) | ≥97% | Strongly coordinating P-containing solvent/ligand; used in precursor synthesis, complex stabilization, and reaction-environment tuning (also used as a research chemical for P-containing systems). | |
Si | Alkoxide (silicate ester) | 78-10-4 | Tetraethyl orthosilicate (TEOS) | Reagent grade, ≥98% | Classic Si source (TEOS); widely used for SiO₂ routes (sol–gel, CVD/PEALD/ALD process development); compatible with oxygen-containing film chemistries. | |
Si | Aminosilane | 186598-40-3 | Bis(tert-butylamino)silane | PrimorTrace™, ≥99.999% metals basis | Common for SiNₓ/SiCN nitridation routes (with NH₃/plasma); more engineerable in safety/controllability than traditional silanes. | |
Zr | Alkoxide (alcoholate) | 2081-12-1 | Zirconium tert-butoxide | Packaged for deposition systems | A common Zr alkoxide for ZrO₂ routes; suitable for oxide films/sol–gel and selected CVD/ALD exploration (moisture sensitive—requires dry handling). | |
Zr | Amino (alkylamido Zr) | 13801-49-5 | Tetrakis(diethylamino)zirconium(IV) | ≥99.99% metals basis | Common Zr amido route for ZrO₂ oxides; supports halide-lean, controllable volatile feed for ALD process development. | |
Zr | Amino (alkylamido Zr) | 175923-04-3 | Tetrakis(ethylmethylamino)zirconium(IV) | PrimorTrace™, ≥99.99% metals basis | Widely used Zr amido precursor for high-k ZrO₂; helps reduce halogen-related issues; suitable for high-purity process windows. | |
Zr | Amido (amido/amino Zr) | 19756-04-8 | Tetrakis(dimethylamido)zirconium(IV) | Packaged for deposition systems | Common Zr (amido/amino) precursor for ZrO₂ and related oxides; often paired with H₂O/O₃/plasma for controlled growth. | |
Ti | Amino (alkylamido Ti) | 4419-47-0 | Tetrakis(diethylamido)titanium(IV) | PrimorTrace™, ≥99.999% metals basis | High-volatility Ti amido precursor; used for TiN/TiO₂ (with NH₃/H₂O/O₃/plasma); “lower corrosion / lower halogen” vs TiCl₄. | |
Ti | Amino (alkylamido Ti) | 3275-24-9 | Tetrakis(dimethylamido)titanium(IV) | Packaged for deposition systems | Typical Ti amido precursor (TDMAT family); used for TiN/TiO₂; commonly paired with NH₃/plasma or oxidants. | |
Hf | Amino (alkylamido Hf) | 352535-01-4 | Tetrakis(ethylmethylamido)hafnium(IV) | Packaged for deposition systems | Common Hf amido family for high-k HfO₂; generally reduces halogen-related issues vs HfCl₄; designed for system delivery. | |
Hf | Amido (amido/amino Hf) | 19782-68-4 | Tetrakis(dimethylamido)hafnium(IV) | Packaged for deposition systems | Common Hf (amido/amino) route for high-k HfO₂; emphasizes volatility and impurity control; suitable for halide-lean windows. | |
Ta | Amino (polyamido Ta) | 19824-59-0 | Pentakis(dimethylamido)tantalum(V) | PrimorTrace™, ≥99.99% metals basis | Common Ta amido route for TaN/Ta₂O₅; supports halide-lean deposition windows and high-purity film development. | |
Ta | Alkoxide (alcoholate) | 6074-84-6 | Tantalum(V) ethoxide | ≥99.98% metals basis | Common Ta alkoxide for Ta₂O₅ routes; suitable for halide-free routes and sol–gel / ALD–CVD transition development. | |
Ta | Imido–amido (typical TaN family) | 69039-11-8 | tert-Butylimido tris(dimethylamido)tantalum(V) | ≥98%, 73-0700, contained in 50 ml Swagelok® cylinder(96-1070) for CVD/ALD | A common “imido + amido” precursor family for TaN/TaCN; supplied in a deposition cylinder for direct CVD/ALD feed. | |
Sn | Alkoxide (alcoholate) | 36809-75-3 | Tin(IV) tert-butoxide | PrimorTrace™, ≥99.99% metals basis | Sn alkoxide route for SnO₂ and related oxides; moisture sensitive; suited for halide-free / low-corrosion exploration. | |
Sn | Amino (alkylamido Sn) | 1066-77-9 | Tetrakis(dimethylamido)tin(IV) | ≥99.9% metals basis | Sn amido precursor usable for SnO₂/SnNₓ routes; compared with halides, helps reduce halogen-driven side reactions. | |
Mo | Imido–amido (MoN/MoC family) | 923956-62-1 | Bis(tert-butylimido)bis(dimethylamido)molybdenum(VI) | ≥98% | A typical high-volatility Mo(VI) “imido + amido” precursor; used for ALD/CVD of MoNₓ/MoCₓ/MoOₓ and related films. |
Table (2) | Halide Precursors (ClₓM: Classic High-Reactivity Route; watch for halogen byproducts/corrosivity)
Category | CAS No. | Aladdin Cat. No. | Name | Spec / Purity | Key features or applications |
Al | Halide | 7446-70-0 | Aluminum chloride | High purity, reagent grade, ≥99% | Raw material for Al halide-route chemistry; used in precursor synthesis and some CVD/ALD exploration (evaluate halogen byproducts and tool corrosion). | |
Si | Halide | 10026-04-7 | Silicon tetrachloride | Packaged for deposition systems | Si halide route (Si/SiO₂ and related derivatives); corrosive—requires compatible tool materials and exhaust handling. | |
Ti | Halide | 7550-45-0 | T118447 | Titanium tetrachloride | PrimorTrace™, ≥99.99% metals basis | Classic Ti source for TiO₂ ALD/CVD (often with H₂O); highly reactive and corrosive—tool materials and abatement must match. |
Sn | Halide | 7646-78-8 | Tin tetrachloride | PrimorTrace™, ≥99.995% metals basis | Common Sn source for SnO₂ transparent conducting oxides and sensing films; monitor halogen byproducts and corrosion. | |
Hf | Halide | 13499-05-3 | Hafnium tetrachloride | Sublimed grade, ≥99.9% metals basis | Common Hf source for high-k HfO₂ (halide route); volatile/sublimable—watch halogen residues and corrosion (tool materials/byproducts). | |
Ta | Halide | 7721-01-9 | Tantalum(V) chloride | PrimorTrace™, sublimed grade, ≥99.99% metals basis | Ta halide route for Ta₂O₅/TaN; high-purity sublimed grade helps reduce metal impurities; evaluate halogen byproducts. | |
Mo | Halide | 10241-05-1 | Molybdenum pentachloride | PrimorTrace™, ≥99.99% metals basis | Optional Mo halide precursor for MoOₓ/MoNₓ routes; high purity supports impurity control (watch halogen byproducts). | |
W | Halide | 13283-01-7 | Tungsten(VI) chloride | ≥99.99% metals basis, powder; purity excludes molybdenum | W/WOₓ/WNₓ routes; includes a “Mo excluded” purity statement—useful for metal-impurity-sensitive applications (watch halogen byproducts). |
Table (3) | Complexes / Carbonyls / Metallocenes & Noble-Metal Precursors (more for metal films, interconnect/electrodes, low-temperature routes, and mechanistic studies)
Category | CAS No. | Aladdin Cat. No. | Name | Spec / Purity | Key features or applications |
W | Carbonyl | 14040-11-0 | Tungsten hexacarbonyl | Packaged for deposition systems | Volatile W carbonyl precursor; for W/WOₓ/WNₓ routes (thermal/photo/plasma assistance common); suitable for lower-temperature exploration. | |
Mo | Carbonyl | 13939-06-5 | Molybdenum hexacarbonyl | ≥99.9% metals basis | Volatile Mo carbonyl precursor; for Mo/MoOₓ/MoNₓ routes (thermal/photo/plasma assistance common); suitable for lower-temperature exploration. | |
In | β-diketonate complex (acac) | 14405-45-9 | Indium(III) acetylacetonate | PrimorTrace™, ≥99.99% metals basis | Common In precursor for In₂O₃/ITO (β-diketonate); high purity helps reduce impurities; volatility/window must match the process. | |
Cu | β-diketonate complex (acac) | 13395-16-9 | Copper acetylacetonate | ≥97% | Common Cu precursor family for CuO/CuₓO film routes; used for window screening and precursor-chemistry studies. | |
Ru | Organometallic (Cp derivative) | 32992-96-4 | Bis(ethylcyclopentadienyl)ruthenium(II) | PrimorTrace™, ≥99.999% metals basis | Common family for Ru metal films (interconnect/electrodes); high purity supports resistivity and impurity control; suitable for ALD/CVD development. | |
Ni | Metallocene | 1271-28-9 | Nickelocene (bis(cyclopentadienyl)nickel(II)) | ≥98% | Organometallic precursor family for Ni metal/Ni-compound films; used in CVD/ALD research and catalytic-film exploration. | |
Ru | Metallocene | 1287-13-4 | Ruthenocene (bis(cyclopentadienyl)ruthenium) | ≥97% | Metallocene precursor for Ru metal film exploration (common in interconnect/electrode/catalysis contexts). | |
Pt | Organometallic (Cp/alkyl Pt) | 94442-22-5 | Trimethyl(methylcyclopentadienyl)platinum(IV) | Pt ≥61.1% | Common precursor family in ALD/CVD studies for Pt metal films/seed layers/catalysis; useful for noble-metal route screening. |
Note: The items above are representative Aladdin products. For more specifications, please refer to the product list at the end of the article, or search the Aladdin website by product name/CAS.
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