Post-Transition Metals and Their Salts: A Classification Guide from Definitions to Value-Chain Applications (Including Product Lists in Tables 1–4)

What are post-transition metals?

Post-transition metals usually refer to a set of main-group metals (mostly in the p-block) that sit to the right of the transition metals in the periodic table, close to the boundary between metals and metalloids/nonmetals. They are also often labeled poor metals / p-block metals / other metals, depending on the source and context. This is a teaching/engineering convenience label, not an element family strictly defined by IUPAC. Its key purpose is to conveniently describe metals whose properties lie between typical metals and metalloids, and whose chemistry behaves more like main-group elements.

Why is the boundary not unique?

Like the category “metalloid,” post-transition metals do not have a globally unified hard boundary. Different textbooks and references disagree on whether to include certain elements (especially Zn/Cd/Hg, or Cu/Ag/Au, Po, etc.). However, many sources emphasize a “core set” that is almost always included.

In most engineering/materials contexts, the elements most often treated as post-transition metals (or as the core set) are:

Al, Ga, In, Sn, Tl, Pb, Bi (sometimes with Po added)

A common consensus is that Ga, In, Sn, Tl, Pb, Bi form the core set.

Typical shared features of post-transition metals

Post-transition metals are often grouped separately because, compared with typical transition metals, they more commonly show these features:

1. Closer to the metal–nonmetal boundary: their structures/bonding more readily show stronger directionality and increased covalent character. Many systems show amphoteric oxides/hydroxides and anionic complexes (e.g., aluminate, stannate, etc.).
2. Oxidation states are more “main-group-like”: unlike typical transition metals, their chemistry is not primarily driven by partially filled d orbitals that enable rich variable valence and coordination chemistry (though they can still form complexes).
3. Inert pair effect: for heavier p-block metals (especially Tl, Pb, Bi, and in part Sn), the outer ns² electron pair is often “less willing” to participate in bonding, making lower oxidation states more stable: Tl(I) is more common than Tl(III), Pb(II) more common than Pb(IV), Bi(III) more common than Bi(V), while Sn(II)/Sn(IV) are both common (with stability/reactivity depending on conditions). This also explains why these elements often exhibit lone-pair-related structural effects and pronounced differences in hydrolysis/coordination behavior.

For comparison: IUPAC defines a transition element as an element whose atom has an incomplete d subshell, or that can form cations with an incomplete d subshell. Post-transition metals generally do not meet this criterion (or at least, it is not their primary chemical driver).

What are post-transition metal salts?

Post-transition metal salts are ionic compounds (salts) built around cations derived from post-transition metal elements (e.g., Al³⁺, Sn²⁺/Sn⁴⁺, Pb²⁺, Bi³⁺, etc.) paired with anions (Cl⁻, NO₃⁻, SO₄²⁻, RCOO⁻, OH⁻, halide-complex anions, etc.). In many real-world contexts, this also includes their salt forms in solution and the associated hydrolysis/complexation equilibria.

In reagent/engineering terms, this typically means a class of halides, nitrates, sulfates, carboxylates, oxides/hydroxides, and their hydrates/complexed forms, sold and used as metal sources. In the solid state and in solution, they may appear as ionic, molecular, polymeric, or complexed structures, depending on composition and conditions.

These salts are often treated in engineering as “weighable, soluble/formulatable, convertible metal sources”, used to:

1. Provide metal ions (for reactions/catalysis/complexation)
2. Serve as precursors (thermal decomposition / hydrolysis / precipitation / sol–gel → oxides, sulfides, halide films, powders)
3. Act as functional additives (flocculation, stabilization, flame retardancy, pigments, plating, electronic-material formulations, etc.)

Are they important? Why?

Yes. They support key industrial value chains including displays, semiconductors, soldering/interconnects, electrochemical energy storage, water treatment, alloys, and lead-free substitution materials.

1. Indium (In): one of the major long-standing uses is ITO (indium tin oxide) transparent conductive films, widely used in flat-panel displays and touch interfaces; also used in some alloys/solders and in compound semiconductor/materials fields.
2. Gallium (Ga): GaN is central to LEDs/laser diodes, power electronics, and RF electronics; GaAs is used in various compound semiconductor devices.
3. Tin (Sn): applications mainly concentrate in tinplate/packaging, solders and alloys, and the broader chemical supply chain (“tin chemicals” as a major source stream).
4. Lead (Pb): consumption is highly concentrated in lead–acid batteries; use in non-battery applications (paints, gasoline additives, solders, water systems, etc.) has declined long-term due to regulation (shares vary by year/region).
5. Aluminum salts (e.g., aluminum sulfate, polyaluminum chloride): widely used as coagulants/flocculants in drinking water and wastewater treatment; performance depends strongly on pH, alkalinity, and dosing conditions.
6. Bismuth (Bi): often considered one option for lead replacement in metallurgy/alloys (requires evaluation of performance and recycling chain); bismuth salts also have established use in gastrointestinal medicines.
7. Thallium (Tl): applications are more specialized (infrared optics, gamma detection, etc.); due to high toxicity and compliance constraints, it usually appears only in controlled R&D or specialized supply chains.

Where are they used, and what roles do they play?

Category	Typical elements/chemical forms (examples)	Typical materials/scenarios	Main role	Selection tips
A Electronics & optoelectronics	In/Sn salts (solution metal sources); ITO/IGZO/FTO oxide systems (targets/films); organogallium precursors TMGa/TEGa (epitaxy)	ITO transparent electrodes; IGZO TFT backplanes; CIGS thin-film PV; GaN/GaAs epitaxy	Upstream metal sources for films/semiconductors	For solution routes: solubility/hydrolysis; for epitaxy: volatility/purity; PVD often corresponds to oxide target systems
B Interconnects & alloys	Sn-based alloys; Bi alloy additives	Solders (incl. lead-free), low-temp soldering; free-cutting alloys/steels; lead-free substitution	Connecting, tuning properties, replacing Pb	Focus on alloy system and melting-point window; Bi often used for lead-free substitution and machinability improvement
C Energy & electrochemistry	Pb/PbO₂; oxides/alloys/doping precursors of Sn/Bi/In/Ga	Lead–acid batteries; selected electrodes/catalysis/conductive oxides (often niche or R&D adoption)	Battery main chain + building blocks for new systems	Emphasis: Pb–acid is mature bulk; others often require system-/form-/purity-specific selection
D Water treatment & environment	Al₂(SO₄)₃ (alum/aluminum sulfate); PACl/PAC (pre-hydrolyzed polyaluminum species)	Drinking water/wastewater coagulation for turbidity removal; removal of colloids/organics	Aggregate particles so they settle/filter out	Mechanisms often summarized as charge neutralization + sweep flocculation; strongly dependent on pH/alkalinity/dose
E Organic synthesis & catalysis	AlCl₃, GaCl₃, InCl₃, SnCl₄ (Lewis acids); SnCl₂ (reducing); some Bi(III) salts (Lewis acid under mild conditions)	Activating carbonyls/epoxides, improving selectivity, widening process window	Faster/more selective/more scalable reactions	Prioritize: oxidation state (Sn(II) vs Sn(IV)), moisture sensitivity, coordination/side-reaction risk
F Pharma & life science	Bismuth salts such as bismuth subsalicylate (GI drugs); Al(OH)₃, aluminum phosphate, etc. (vaccine adjuvants)	GI formulations; vaccine adjuvants and biologics formulations	Active ingredient or functional excipient	Safety note: large differences by element/form; both Al-salt adjuvants and Bi salts have mature uses, but not a “naturally safe” label

How to classify them: what type of post-transition metal salt is it, and how should it be used?

Level	What to look at	What you can conclude	Common examples
Step 1 Element	Element symbol/metal name: Al, Ga, In, Sn, Tl, Pb, Bi	Big picture: value-chain use + compliance/toxicity tier	In → displays/ITO; Ga → GaN/GaAs; Sn → solder/chemicals; Pb → batteries; Al → water treatment; Bi → lead-free substitution/drugs
Step 2 Valence (oxidation state)	(III)/(II)/(IV)/(I) or “Sn(II)”, “Sn(IV)”, etc.	Reactivity/stability framework: redox, Lewis acidity, hydrolysis tendency	Sn(II) is often more reducing and easier to oxidize; Sn(IV) is more stable and more strongly Lewis acidic; Tl often +1; Pb often +2; Bi often +3
Step 3 Anion (salt form)	Cl⁻ / Br⁻ / NO₃⁻ / SO₄²⁻ / OAc⁻ (acetate) / RCOO⁻ / OH⁻	Solubility, moisture sensitivity, suitability as a solution metal source	Anhydrous AlCl₃ is strongly hygroscopic and hydrolyzes readily; Pb(NO₃)₂ is a common soluble Pb source; sulfates/carbonates often lean toward precipitation/ceramic routes
Step 3.5 Hydration/solvation	anhydrous, ·xH₂O, ·MeCN, solution, etc.	Same “name” can differ in effective metal content, activity, and exothermic hydrolysis behavior	“BiCl₃” vs “BiCl₃·xH₂O”; anhydrous AlCl₃ reacts exothermically with water; hydrated metal nitrates are commonly water-containing

Element–valence–typical forms–selection points

Element	Common valence states	Typical examples	Common roles	Selection points
Al	+3	AlCl₃; Al₂(SO₄)₃; PAC	Lewis acid/catalysis; water-treatment coagulation; inorganic precursor	In water systems: focus on hydrolysis/alkalinity window; anhydrous halides are strongly hygroscopic
Ga	+3	GaCl₃, Ga(NO₃)₃; organogallium precursors (epitaxy)	Upstream metal sources for optoelectronics/semiconductors	Electronic-grade routes emphasize purity and precursor form
In	+3	InCl₃, In(NO₃)₃; complex precursors	ITO/display-related; materials precursors	Solution routes: watch hydrolysis/complexation and impurity control
Sn	+2/+4	SnCl₂, SnCl₄; organotin/tin carboxylates	Solders/alloys; materials precursors; selective reagents	First separate Sn(II) vs Sn(IV) (very different reactivity)
Tl	+1/+3	TlNO₃, TlCl	Limited specialized uses/research	Highly toxic and highly constrained; compliance first
Pb	+2 (rarely +4)	Pb(NO₃)₂, Pb(OAc)₂, PbO	Lead–acid battery chain; regulated uses declining	In most contexts: recognize Pb(II) dominance and compliance limits
Bi	+3	Bi(NO₃)₃, BiCl₃; some pharmaceutical salts	Lead-free alloy additive; catalysis/drugs	Bi(III) dominates; common “basic salts/oxyhalides” as intermediate forms

Representative Product Classification Tables for Post-Transition Metals (Tables 1–4)

Quick Guide to the Four Product Tables

1. Table 1 | Pb (Lead): Lead oxides / lead-salt conversion chemistry, lead halides (PbCl₂ / PbBr₂ / PbI₂), and the organolead oxidant lead tetraacetate. Toxicity and regulatory compliance must be confirmed first.
2. Table 2 | Sn (Tin): Tin halides and tin oxides (SnO₂ / SnO), reducing Sn(II) salts (e.g., SnCl₂), and organotin catalysts (DBTDL, stannous 2-ethylhexanoate).
3. 3. and as bismuth precursors.
4. Table 4 | In / Ga / Tl / Al + ITO + Standards: Transparent conductors / semiconductors and thin-film deposition (ALD/MOCVD), high-purity precursors, plus various standard solutions / thermal-analysis standards. Tl is extremely toxic and is limited to compliant materials research.

How to Choose Quickly Within the Tables

1. For bulk materials: prioritize oxides / functional oxides (e.g., ITO, In₂O₃, Ga₂O₃, SnO₂, Bi₂O₃).
2. For precursors / solution routes: prioritize nitrates / halides / complexes (acac); for moisture-sensitive systems choose ultra-dry / anhydrous / high-purity grades.
3. For deposition (ALD/MOCVD): prioritize organometallics (e.g., TMA, TEAl, TMGa/TEGa, TEIn).
4. For calibration / quantification: choose standard solutions / thermal-analysis standards (not primary material feedstocks).

Table 1 | Pb (Lead) System (Including Organolead Reagents)

Category	CAS No.	Aladdin Cat. No.	Name	Specification / Purity	Application or Key Features (Post-transition-metal related)
Pb (Lead) | Metal (foil)	7439-92-1	L433425	Lead foil	Analytical foil, ~0.25 mm thick	Typical metallic lead foil: used for analytical reference, shielding/electrodes/material comparison, etc.; a “form factor” supply of the post-transition metal Pb.
Pb (Lead) | Metal (powder)	7439-92-1	L105392	Lead powder	≥99.95% metals basis	Pb metal source (powder form): for alloys/material preparation, powder metallurgy, and lab formulation benchmarking (particle size and surface oxide layer affect reactivity/sintering); also used in research formulations for shielding/composites (note lead toxicity and compliance).
Pb (Lead) | Oxide	1317-36-8	L141267	Lead(II) oxide, yellow	Orthorhombic, 99.97% metals basis	Typical Pb(II) oxide metal source; for glass/ceramic glazes, precursor to lead salts/lead-oxide systems, and lead-based functional materials (note toxicity and environmental restrictions).
Pb (Lead) | Mixed-valence oxide (red lead)	1314-41-6	L112926	Lead(II,IV) oxide (Pb₃O₄)	AR, ≥95%	Pb₃O₄ (red lead): lead-oxide system/material precursor; also used as a reference in lead chemistry/pigment/protective systems (note toxicity).
Pb (Lead) | Oxide (PbO₂)	1309-60-0	L753005	Lead dioxide	≥99.9% metals basis	Pb(IV) oxide: strong oxidant; relevant to electrode materials (e.g., lead–acid systems, electrochemical reference); note lead toxicity and oxidizing hazard.
Pb (Lead) | Carboxylate (acetate)	6080-56-4	L112922	Lead(II) acetate trihydrate	Premium grade, ≥99.5%	Common soluble Pb(II) metal source: for preparing other lead salts/lead oxides, precursor for materials synthesis; also used in complexation/precipitation chemistry (note toxicity).
Pb (Lead) | Carbonate	598-63-0	L433042	Lead(II) carbonate	Analytical grade, ACS, premium	Typical sparingly soluble Pb(II) salt/lead source: for lead-salt conversions, ceramics/inorganic pigments, and precursor studies (note toxicity and regulations).
Pb (Lead) | Basic salt (basic carbonate)	1319-46-6	L105147	Basic lead carbonate	AR, ≥99%	Common “lead white”/basic lead carbonate: pigment/inorganic precursor and lead-salt conversion chemistry; lead toxicity and regulatory restrictions are significant.
Pb (Lead) | Nitrate (strong oxidizer)	10099-74-8	L431226	Lead(II) nitrate (explosive precursor)	Ph.Eur, analytical grade, ACS, premium	Typical soluble Pb(II) salt / oxidizing nitrate: used to prepare PbO/PbX₂ and other lead compounds/material precursors (note oxidizing hazard and safety/compliance).
Pb (Lead) | Sulfate	7446-14-2	L112940	Lead sulfate	PrimorTrace™, ≥99.999% metals basis	High-purity PbSO₄: sparingly soluble lead salt/reference material; used for lead-salt conversion, material benchmarking, and precipitation chemistry studies (note lead toxicity).
Pb (Lead) | Halide (chloride)	7758-95-4	L407489	Lead(II) chloride	PrimorTrace™, ultra-dry, ≥99.99% metals basis	High-purity PbCl₂ metal source: for lead-halide materials / lead-halide perovskite research and lead-salt conversion; note toxicity and compliance.
Pb (Lead) | Halide (bromide)	10031-22-8	L119346	Lead(II) bromide	PrimorTrace™, ≥99.999% metals basis	High-purity PbBr₂ precursor: commonly used in lead-halide perovskite/optoelectronic materials and lead-salt routes; impurities/moisture strongly affect device/optical performance.
Pb (Lead) | Halide (high-purity iodide)	10101-63-0	L292078	Lead(II) iodide	PrimorTrace™, ultra-dry, ≥99.999% metals basis	High-purity PbI₂ precursor: closely tied to lead-halide optoelectronic/semiconductor materials (e.g., perovskite precursor routes); ultra-dry grade and trace control are key to device consistency.
Pb (Lead) | Organolead reagent (strong oxidant)	546-67-8	L106810	Lead tetraacetate	AR, with 4–10% glacial acetic acid stabilizer	Classic oxidant/cleavage reagent in organic synthesis (Pb(IV) reagent); glacial acetic acid as stabilizer; strict attention required for toxicity and waste disposal.

Table 2 | Sn (Tin) System (Including Organotin Catalysts)

Category	CAS No.	Aladdin Cat. No.	Name	Specification / Purity	Application or Key Features (Post-transition-metal related)
Sn (Tin) | Metal (powder)	7440-31-5	T141462	Tin powder	For elemental analysis	Sn metal source / reducing metal powder: for elemental analysis, alloy/material preparation, and reduction reactions; particle size and surface oxide affect activity.
Sn (Tin) | Oxide	18282-10-5	T432252	Tin(IV) oxide	Basic grade, for preparation	Typical SnO₂ precursor / functional oxide: common in gas-sensing materials, catalysis, and transparent-conductor related systems; also used as a filler and for mixed-oxide preparation.
Sn (Tin) | Oxide (Sn(II))	21651-19-4	T475191	Tin(II) oxide	PrimorTrace™, ≥99.99% metals basis	SnO (stannous oxide): for tin-oxide materials, redox/valence-controlled synthesis; high purity helps phase purity and electrical consistency.
Sn (Tin) | Sulfate (Sn(II))	7488-55-3	S112918	Stannous sulfate	AR	SnSO₄: common Sn(II) metal source / reducing salt; used for tin-salt conversion and precursor preparation.
Sn (Tin) | Halide (tin tetrachloride, crystalline)	10026-06-9	S116324	Tin(IV) chloride, crystalline	Premium grade, ≥99%	Typical Sn(IV) precursor; used for SnO₂/tin-based materials and as a Lewis-acid/catalysis-related precursor (moisture-sensitive; control humidity).
Sn (Tin) | Halide (tin tetrachloride, Sn(IV))	7646-78-8	T433714	Tin(IV) chloride	PrimorTrace™, ≥99.995% metals basis	High-purity SnCl₄: common precursor for SnO₂/tin-based materials and catalysis; moisture-sensitive; ultra-dry/high purity aids controlled synthesis.
Sn (Tin) | Halide (stannous salt)	7772-99-8	T433980	Tin(II) chloride	Anhydrous grade, for synthesis	Typical Sn(II) reducing metal salt: widely used as a reductant and tin source in organic/material synthesis; anhydrous grade benefits moisture-sensitive systems.
Sn (Tin) | Halide (hydrated stannous salt)	10025-69-1	T478535	Tin(II) chloride dihydrate	Reagent grade, 98%	Common soluble Sn(II) tin source: broad use in reduction and coordination chemistry; dihydrate dissolves more readily for solution prep (oxygen/water sensitive—control conditions).
Sn (Tin) | Halide (bromide, Sn(II))	10031-24-0	T302028	Tin(II) bromide	≥99%	SnBr₂: Sn(II) halide metal source / reducing salt; used in tin halide and coordination/synthesis systems.
Sn (Tin) | Halide (fluoride, Sn(II))	7783-47-3	T195033	Tin(II) fluoride	≥99%	SnF₂: Sn(II) fluoride metal source; relevant to fluorine chemistry/material precursors and specific formulation systems.
Sn (Tin) | Halide (iodide, Sn(II))	10294-70-9	T292327	Tin(II) iodide	PrimorTrace™, ultra-dry, ≥99.99% metals basis	High-purity SnI₂ precursor: used for tin iodide/tin-halide semiconductors and materials synthesis; ultra-dry grade suits moisture-sensitive routes and trace control.
Sn (Tin) | Halide (tin tetraiodide)	7790-47-8	T195043	Tin(IV) iodide	Anhydrous, PrimorTrace™, ≥99.998% metals basis	High-purity Sn(IV) halide precursor: for high-purity tin compounds/semiconductors and materials synthesis; trace control suits electronics/optoelectronics.
Organotin | Catalyst (DBTDL)	77-58-7	D100274	Dibutyltin dilaurate (DBTDL)	≥95%	Classic organotin catalyst: promoter for polyurethane and silicone-rubber condensation curing; sensitive to regulations/toxicology—watch substitution trends.
Organotin | Catalyst (stannous 2-ethylhexanoate / stannous octoate)	301-10-0	T100108	Stannous 2-ethylhexanoate	≥95%	Common Sn(II) organocarboxylate catalyst: for polyester polycondensation and polyurethane/silicone systems; a “soluble Sn(II) catalyst form” that is easy to dose and disperse.

Table 3 | Bi (Bismuth) System

Category	CAS No.	Aladdin Cat. No.	Name	Specification / Purity	Application or Key Features (Post-transition-metal related)
Bi (Bismuth) | Metal (granules)	7440-69-9	B109170	Bismuth granules	PrimorTrace™, ≥99.999% metals basis, 1–6 mm	Ultra-high-purity Bi metal source: for alloys/targets/melting and materials preparation; granules are convenient for weighing and melt processing.
Bi (Bismuth) | Oxide (nano)	1304-76-3	B431714	Bismuth(III) oxide	Nanopowder, ≥99.8% trace metals basis, 100–500 nm	Common Bi₂O₃ functional oxide: used in ceramics/glass modification and research on photocatalysis/ion conductors; trace control helps electrical/optical consistency.
Bi (Bismuth) | Halide (chloride)	7787-60-2	B100338	Bismuth(III) chloride	Reagent grade	Common Bi(III) metal source: for preparing bismuth salts/bismuth oxides, exploring Lewis-acid/catalysis systems, and materials synthesis.
Bi (Bismuth) | Nitrate	1304-85-4	B431716	Bismuth(III) nitrate	Ph.Eur, premium reagent, analytical grade, basic	Soluble Bi(III) salt precursor: used for Bi₂O₃/basic bismuth salts, catalysis, and materials; the “basic” form relates to hydrolysis/coordination behavior.
Bi (Bismuth) | Nitrate (pentahydrate)	10035-06-0	B110814	Bismuth(III) nitrate pentahydrate	PrimorTrace™, ≥99.99% metals basis	Common soluble Bi(III) precursor: for Bi₂O₃, basic bismuth nitrate, etc.; widely used in photocatalysis/functional-ceramic precursor routes.
Bi (Bismuth) | Carboxylate (acetate)	22306-37-2	B303104	Bismuth(III) acetate	PrimorTrace™, ≥99.99% metals basis	Convertible Bi(III) metal source: for bismuth oxides/basic bismuth salts and materials precursors; organic-acid salts are convenient in solvent-based processing.
Bi (Bismuth) | Basic halide (oxychloride)	7787-59-9	B304629	Bismuth oxychloride	≥99%	BiOCl: a common layered bismuth oxyhalide; used in photocatalysis, pigments/pearlescent effects, and precursor studies.
Bi (Bismuth) | Organic acid salt (subsalicylate)	14882-18-9	B107666	Bismuth subsalicylate	≥97%	Bi organic-acid/basic bismuth salt system: common in pharma and bismuth-source studies; can also serve as a conversion precursor to other bismuth compounds.

Table 4 | In / Ga / Tl / Al Systems + ITO + Standards

Category	CAS No.	Aladdin Cat. No.	Name	Specification / Purity	Application or Key Features (Post-transition-metal related)
In (Indium) | Reference material (thermal analysis)	7440-74-6	I119584	Thermal analysis reference material (indium)	Melting point: 156.52 °C	Common metal standard for DSC/DTA temperature/enthalpy calibration; post-transition metal In used as a “high-purity fixed point” for instrument metrology.
In (Indium) | Halide (hydrate)	10025-82-8	I431124	Indium(III) chloride hydrate	~39% In basis, 2–3 mol/mol H₂O	Common In(III) metal source: Lewis acid for coordination/organic synthesis and precursor for indium oxide/indium sulfide, etc.; hydrate form facilitates dissolution and solution preparation.
In (Indium) | Halide (high-purity tribromide)	13465-09-3	I290921	Indium(III) bromide	Ultra-dry, ≥99.95% metals basis	High-purity In(III) source: for high-purity indium inorganic/organometallic routes and electronic-material precursors; ultra-dry grade suits moisture-sensitive synthesis.
In (Indium) | Nitrate (hydrate)	207398-97-8	I118831	Indium nitrate hydrate	PrimorTrace™, ≥99.999% metals basis	High-purity soluble In(III) source: for indium oxides/indium salts, sol–gel and impregnation precursors; hydrate form eases solution preparation.
In (Indium) | Oxide (nano In₂O₃)	1312-43-2	I105868	Nano indium oxide	PrimorTrace™, ≥99.99% metals basis, <50 nm (TEM)	In₂O₃ nanopowder: widely used in transparent conductors, gas sensing, and catalysis; particle size affects dispersion, sintering, and conductive networks.
In (Indium) | β-diketonate complex (acac)	14405-45-9	I465809	Indium(III) acetylacetonate	PrimorTrace™, ≥99.99% metals basis	Typical In(acac)₃ precursor: commonly used for sol–gel, spray pyrolysis, thin-film coating/deposition, etc.
In (Indium) | Organometallic (MOCVD precursor)	923-34-2	T770767	Triethylindium	≥99.999% metals basis	Typical In source for MOCVD/epitaxial deposition (e.g., InP/InAs/InGaAs systems); high purity strongly impacts epitaxial defects and electrical properties.
In–Sn (Indium–tin) | Functional oxide (ITO)	50926-11-9	I432805	Indium tin oxide	Nanopowder, <50 nm	Typical transparent conductive oxide (TCO): for transparent electrodes, display/PV/sensor conductive coatings; particle size affects dispersion, sintering, and conductive pathways.
Ga (Gallium) | Analytical standard solution	7440-55-3	G115414	Gallium standard solution	Analytical standard, 1000 µg/mL in 1 mol/L HCl	Trace Ga calibration: for quantifying Ga in semiconductor/material samples and method development.
Ga (Gallium) | Halide (anhydrous chloride)	13450-90-3	G196258	Anhydrous gallium(III) chloride	PrimorTrace™, ≥99.999% metals basis	High-purity GaCl₃ (Lewis acid / Ga source): for coordination/organic synthesis and gallium-compound preparation; anhydrous high purity suits trace-sensitive and moisture-sensitive reactions.
Ga (Gallium) | Halide (high-purity bromide)	13450-88-9	G302444	Gallium(III) bromide	Ultra-dry, ≥99.999% metals basis	High-purity Ga(III) source: for Ga compound/semiconductor precursor routes; ultra-dry grade suits moisture-sensitive/high-purity synthesis.
Ga (Gallium) | Halide (iodide)	13450-91-4	G284076	Gallium(III) iodide	PrimorTrace™, ultra-dry, ≥99.99% metals basis	High-purity GaI₃ precursor: for gallium-halide/electronic-material chemistry and inorganic synthesis; ultra-dry grade benefits moisture-sensitive systems.
Ga (Gallium) | Nitrate (hydrate)	69365-72-6	G118483	Gallium(III) nitrate hydrate	PrimorTrace™, ≥99.999% metals basis	High-purity soluble Ga(III) salt: for Ga₂O₃/gallium salts and materials precursors; common Ga source for aqueous processing.
Ga (Gallium) | Sulfate (hydrate)	13780-42-2	G190759	Gallium sulfate hydrate	PrimorTrace™, ≥99.999% metals basis	High-purity Ga(III) salt: gallium source / solution precursor; suited for sulfate-based systems or syntheses requiring specific ionic strength.
Ga (Gallium) | Sulfate (anhydrous / labeled (III))	13494-91-2	G475156	Gallium(III) sulfate	PrimorTrace™, ≥99.99% metals basis	Ga(III) sulfate: common for solution preparation and inorganic synthesis; suited for sulfate systems or routes controlling coordination environment.
Ga (Gallium) | Oxide (Ga₂O₃)	12024-21-4	G110982	Gallium oxide	PrimorTrace™, ≥99.999% metals basis	Ultra-high-purity Ga₂O₃ functional oxide: common in wide-bandgap semiconductors/transparent electronics; high purity improves electrical/optical consistency.
Ga (Gallium) | β-diketonate complex (acac)	14405-43-7	G107856	Gallium(III) acetylacetonate	PrimorTrace™, ≥99.99% metals basis	Typical Ga(acac)₃ precursor: used for Ga₂O₃/gallium-based films and powders (solution routes, coating, thermal decomposition, etc.).
Ga (Gallium) | Organometallic (MOCVD precursor)	1115-99-7	T475958	Triethylgallium	Packaged for deposition systems	Typical Ga source for MOCVD/epitaxial deposition (GaAs/GaN-related research); highly volatile/reactive; packaging is designed for deposition delivery.
Ga (Gallium) | Organometallic (MOCVD precursor)	1445-79-0	T432113	Trimethylgallium	Packaged for deposition systems	Typical MOCVD Ga source: for GaN/GaAs films/epitaxy; oxygen/moisture sensitive and supplied for system-level delivery.
Tl (Thallium) | Halide (high-purity bromide)	7789-40-4	T578964	Thallium(I) bromide	Ultra-dry, ≥99.998% metals basis	Tl(I) halide crystal/salt precursor: relevant to Tl-halide materials for infrared optics and radiation detection (Tl is highly toxic; strict compliance required).
Tl (Thallium) | Halide (iodide)	7790-30-9	T292456	Thallium iodide	PrimorTrace™, ultra-dry, ≥99.99% metals basis	High-purity TlI: used in Tl-halide crystal materials for infrared optics/radiation detection; strict safety and regulatory compliance required due to extreme toxicity.
Al (Aluminum) | Oxide support (porous alumina)	1344-28-1	A1492668	Activated alumina balls	For catalyst supports	Typical catalyst support/adsorbent: for metal loading, drying/dehydration, and purification adsorption; pore structure and surface area govern loading and mass transfer.
Al (Aluminum) | Hydroxide	21645-51-2	A657564	Aluminum hydroxide	For preparing alumina	Al₂O₃ precursor: calcination yields alumina; also common in inorganic fillers/flame retardancy systems and aluminum-salt preparation routes.
Al (Aluminum) | Halide (hydrate)	7784-13-6	A475793	Aluminum chloride hexahydrate	High purity, reagent grade, ≥99%	Common Al(III) salt: for preparing aluminum-salt solutions and hydrolysis/precipitation syntheses; hydrate chloride is sensitive to acidity and complexation.
Al (Aluminum) | Sulfate	10043-01-3	A101186	Aluminum sulfate	Anhydrous, ≥99.95% metals basis	Common Al(III) salt: for water-treatment flocculation, papermaking, inorganic synthesis, and alumina-route precursors; high purity suits materials/analytical uses.
Al (Aluminum) | Fluoride	7784-18-1	A105069	Aluminum fluoride	Anhydrous, ≥99.9% metals basis	Typical Al–F inorganic salt: fluoride-chemistry/inorganic-synthesis precursor; also linked to aluminum electrolysis flux/catalyst-support modification in some systems.
Al (Aluminum) | Nitrate (hydrate)	7784-27-2	A434090	Aluminum nitrate nonahydrate	Analytical grade, premium	Common soluble Al(III) salt: for inorganic synthesis/sol–gel precursors and analytical reagents; hydrate form facilitates solution preparation and impregnation.
Al (Aluminum) | Halide (high-purity iodide)	7784-23-8	A434022	Aluminum iodide	PrimorTrace™, anhydrous, ≥99.999% metals basis, powder	High-purity Al(III) halide / Lewis-acid-type precursor: for high-purity inorganic synthesis and Al–halide chemistry; anhydrous high purity helps trace control.
Al (Aluminum) | Halide solution (Lewis acid)	7727-15-3	A433866	Aluminum bromide solution	Anhydrous, 1.0 M in dibromomethane	Typical strong Lewis acid: promotes Friedel–Crafts, halogenation, rearrangements, etc.; solution form enables accurate dosing and anhydrous use.
Al (Aluminum) | Alkoxide	555-31-7	A432901	Aluminum isopropoxide (triisopropoxide)	For synthesis	Typical metal-alkoxide precursor: sol–gel preparation of alumina/composite-oxide films and powders; also used as an Al source in organic catalysis/transformations.
Al (Aluminum) | Basic salt (basic acetate)	142-03-0	A100197	Basic aluminum acetate	AR	Al(III) salt/complex system: for aluminum-salt solutions, precipitation/colloid systems, and materials precursors; basic salts are sensitive to pH/hydrolysis.
Al (Aluminum) | Polymeric salt (PAC)	1327-41-9	A190574	Polyaluminum chloride	Al₂O₃ ≥28%	Typical water-treatment flocculant/polymeric Al salt: dominated by multinuclear hydroxy-aluminum species; widely used in engineering, with emphasis on effective Al₂O₃ content.
Al (Aluminum) | Analytical standard solution	7429-90-5	A105852	Aluminum standard solution	Analytical standard, 100 µg/mL in 5% HCl	For ICP/AAS/IC calibration; acidic matrix (5% HCl) stabilizes metal ions and supports traceable quantification.
Al (Aluminum) | Organometallic (ALD/MOCVD precursor)	75-24-1	T433589	Trimethylaluminum (TMA)	Packaged for deposition systems	Classic ALD precursor for Al₂O₃ films; also used as a co-catalyst/scavenger in polymerization (highly pyrophoric/reactive; requires dedicated gas handling).
Al (Aluminum) | Organometallic (TEAl solution)	97-93-8	T434622	Triethylaluminum solution	25 wt.% in toluene	Typical Ziegler–Natta/metallocene co-catalyst & scavenger; highly pyrophoric/reactive; solution form aids metering (requires inert handling).

Note: The above are representative Aladdin catalog numbers. For more products, please refer to the product tables at the end of this article or search the official website by CAS number or product name.

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