From EL to UPSSS: Cleanliness Grades, Key Specifications, and Selection Logic for Electronic-Grade Reagents

1. Why are electronic-grade reagents divided into so many grades?

Electronic-grade reagents are mainly used in semiconductors, display panels, photovoltaics, light-emitting diodes, printed circuit boards, electronic components, precision cleaning, and high-end trace analysis. Their main difference from ordinary laboratory reagents is not simply higher assay or main-component content. More importantly, they require stricter control of metallic impurities, particles, ionic residues, organic residues, nonvolatile residues, packaging cleanliness, and batch-to-batch consistency.

In electronics manufacturing, reagents often come into direct contact with wafers, silicon substrates, glass substrates, metal interconnects, thin-film materials, or highly clean surfaces. Trace metals, particles, or residues that may be negligible in ordinary laboratory experiments can cause pattern defects, short circuits, corrosion, surface residues, yield loss, or reliability problems in semiconductor, display, and precision electronics manufacturing.

The liquid chemical analysis guide issued by Semiconductor Equipment and Materials International states that liquid chemicals are widely used in semiconductor device manufacturing, and their purity can affect device yield during manufacturing. Different purity grades require analytical methods with corresponding sensitivity. The role of grades such as EL, UP, UPS, UPSS, and UPSSS is to translate downstream process requirements for cleanliness into product specifications that can be tested, compared, and accepted.

2. Relationship among EL, UP, UPS, UPSS, and UPSSS grades

EL, UP, UPS, UPSS, and UPSSS are common grade designations used for electronic-grade reagents and wet electronic chemicals in China. They can be understood as a cleanliness ladder from lower to higher grade:

EL → UP → UPS → UPSS → UPSSS

A higher grade usually means lower limits for individual metallic impurities, stricter particle control, higher cleanliness requirements for packaging and filling, and greater analytical difficulty. Two classification conventions need to be distinguished here:

1. The common domestic reagent-labeling convention, namely the EL, UP, UPS, UPSS, and UPSSS designations used in many product documents.

2. The G-grade convention used by Semiconductor Equipment and Materials International. In publicly available industry materials, common G-grade tables for wet electronic chemicals range from G1 to G5. The limits for individual metallic impurities are usually listed as: G1 ≤1000 ppb, G2 ≤10 ppb, G3 ≤1 ppb, G4 ≤0.1 ppb, and G5 ≤0.01 ppb. These tables also consider controlled particle size, particle count, and applicable integrated-circuit feature size.

Note: EL, UP, UPS, UPSS, and UPSSS are commonly seen on domestic reagent labels and in some supplier documents, but this does not mean that all wet electronic chemicals follow one unified standard. SEMI G1–G5, or C1, C7, C8, C12, and Grade 5 systems, not only consider metallic impurities but also include particle size, particle count, applicable process feature size, and other indicators. The cleanliness requirements of the two systems may be used as references for each other, but they cannot be directly converted one-to-one. Actual selection should be confirmed based on the specific product standard, Certificate of Analysis, and technical agreement.

Grade	Full English name	Common domestic designation	Limit for individual metallic impurities	Relationship with G grade	Main features
EL	Electronic Level	Electronic grade	≤100 ppb	Between common G1 and G2 requirements; some materials classify it within the G1–G2 range	Basic electronic grade, suitable for electronic processes with relatively lower cleanliness requirements
UP	Ultra Pure	Ultrapure grade	≤10 ppb	Close to common G2 metallic-impurity level	Metallic impurities are significantly lower than EL; suitable for higher-cleanliness applications
UPS	Ultra Pure Special	Special ultrapure grade	≤1 ppb	Close to common G3 metallic-impurity level	Enters stricter ppb-level contamination control
UPSS	Ultra Pure Special Special	Advanced special ultrapure grade	≤0.1 ppb	Close to common G4 metallic-impurity level	Used for high-cleanliness electronics manufacturing and critical semiconductor processes
UPSSS	Ultra Pure Special Special Special	Higher-level special ultrapure grade	≤0.01 ppb	Close to common G5 metallic-impurity level; G5+ and G6 are often nonstandard designations defined by companies or customers	Used for advanced processes, extremely low metallic contamination control, or ultra-low-blank analysis

Here, ppb means one part per billion. The limit for individual metallic impurities refers to the control limit for each single metal element and is not equivalent to the total amount of all metallic impurities. Some products also specify a separate limit for total metallic impurities. In addition, it is necessary to confirm how ppb is expressed: by mass fraction, mass concentration, target element, or target ion. Solvents with different densities, concentrated acids, and formulated liquids cannot simply be treated as having the same mass-concentration meaning when expressed in ppb.

3. The specification system behind the grades: metals, particles, ions, residues, and packaging

The grade of an electronic-grade reagent is not determined solely by assay or main-component content. For the same reagent, even if the main-component content is similar, there may be significant differences in metallic impurities, particle count, nonvolatile residue, total organic carbon, and packaging cleanliness. Electronic-grade reagent grades are mainly supported by the following types of specifications.

3.1 Assay or concentration

Assay or concentration determines the basic function of the reagent. For example, acid concentration affects etch rate and cleaning effect, alkali concentration affects reaction strength, and solvent purity affects cleaning and evaporation behavior. However, assay is not the only core factor in electronic-grade classification. Electronic-grade reagents place greater emphasis on low contamination, low particle levels, low residue, and batch-to-batch stability.

3.2 Metallic impurities

Metallic impurities are among the most important control specifications for electronic-grade reagents. Commonly monitored elements include sodium, potassium, iron, copper, calcium, magnesium, aluminum, chromium, nickel, and zinc. These metal ions may introduce contamination onto wafer surfaces and affect electrical performance, device reliability, film quality, etch uniformity, and the stability of subsequent processes.

From EL to UPSSS, the limits for individual metallic impurities usually decrease by orders of magnitude. Based on the limits in the table above, EL is ≤100 ppb and UPSSS is ≤0.01 ppb, a difference of 10,000 times.

3.3 Particles

Particles are a critical source of contamination in electronics manufacturing. Tiny particles may cause pattern defects, short circuits, scratches, film abnormalities, or surface residues. High-grade electronic-grade reagents require not only low metallic impurities but also low particle counts and smaller controlled particle sizes. In publicly available G-grade materials, G1, G2, G3, G4, and G5 not only specify metallic impurity requirements, but also list controlled particle size, particle count, and applicable integrated-circuit feature size.

3.4 Ions and nonmetallic impurities

Different reagents require attention to different ions and nonmetallic impurities. Common items include chloride, sulfate, nitrate, phosphate, fluoride, silicon, boron, phosphorus, and arsenic. These impurities may affect corrosion, etching, cleaning, residues, surface condition, and analytical blanks. The key specifications for acids, bases, solvents, oxidants, etchants, and cleaning solutions are not exactly the same.

3.5 Nonvolatile residue and total organic carbon

Nonvolatile residue refers to the residue left after a reagent evaporates. For solvents, cleaning agents, stripping solutions, and some acid or alkaline reagents, excessive nonvolatile residue can contaminate device surfaces. Total Organic Carbon, abbreviated as TOC, is commonly used to evaluate organic contamination in electronic-grade water, aqueous systems, and some inorganic acid or alkaline reagents. For organic solvents themselves, greater attention is usually paid to gas chromatographic purity, water content, acidity or alkalinity, evaporation residue, ultraviolet absorbance, metallic impurities, and particle specifications. TOC should not be used as the only criterion for judging cleanliness.

3.6 Cleanliness of packaging, filling, and storage

High-purity reagents are very susceptible to secondary contamination. Containers, caps, pipelines, filters, air, filling environments, transportation, and opening operations can all introduce metals, particles, or organic contamination. High-grade electronic-grade reagents require not only purification capability, but also low-extractable packaging materials, clean filling environments, final filtration, sealing control, batch traceability, and stable supply.

4. Key differences between adjacent grades

The differences between adjacent grades are first reflected in the limits for individual metallic impurities. In common labeling conventions such as UP, UPS, UPSS, and UPSSS, the limits for individual metallic impurities often decrease by one order of magnitude at each step.

Adjacent grades	Change in individual metallic impurities	Core difference	Situations where upgrading is appropriate
EL → UP	100 ppb → 10 ppb	From basic electronic grade to stricter ultrapure control	Ordinary electronic cleaning or general electronic component processes no longer meet metallic impurity requirements
UP → UPS	10 ppb → 1 ppb	Metallic contamination control enters a lower ppb range, and particle and ion requirements usually increase accordingly	Critical processes in displays or photovoltaics, precision cleaning, or customer requirements for higher cleanliness
UPS → UPSS	1 ppb → 0.1 ppb	From high-purity control to ultrahigh-purity control, with significantly greater difficulty in testing, filtration, packaging, and filling	Semiconductor wet processes, critical wafer cleaning, and high-cleanliness processes requiring lower contamination risk
UPSS → UPSSS	0.1 ppb → 0.01 ppb	Enters an extremely low metallic-impurity control range, usually requiring higher-sensitivity testing and stricter supply-chain management	Advanced processes, high-end wafer manufacturing, ultra-low-blank analysis, or explicit requirements in customer technical agreements

The changes brought by upgrading between adjacent grades are not limited to a lower limit for a single metallic impurity. In practice, they also include:

1. Higher sensitivity of analytical methods;

2. Smaller controlled particle size;

3. Higher requirements for filtration systems;

4. Lower risk of extractables from packaging materials;

5. Higher cleanliness of the filling environment;

6. Stricter requirements for batch-to-batch consistency;

7. Longer customer qualification cycles;

8. Higher product cost and greater supply difficulty.

Grade upgrading is essentially an overall upgrade of the product quality-control system.

5. How should these grades be understood in different application fields?

Electronic-grade reagents are not used only in semiconductors. Different fields have different grade requirements, depending on product precision, process sensitivity, and tolerance for contamination.

Application field	Common uses	Key points in grade selection
Semiconductor manufacturing	Wafer cleaning, wet etching, oxide removal, metallic contamination control, surface treatment, stripping	Metallic impurities, particles, nonvolatile residue, packaging cleanliness
Display panels	Glass substrate cleaning, etching, developing, stripping, surface treatment	Particles, metals, ionic residues, batch stability
Photovoltaic cells	Silicon wafer cleaning, texturing, etching, surface treatment	Cost, metallic impurities, particles, and process stability
Printed circuit boards	Cleaning, etching, pretreatment before electroplating, surface treatment	Impurity control, supply stability, cost
Light-emitting diodes and electronic components	Precision cleaning, etching, surface treatment	Metals, particles, ionic residues, batch stability
High-end trace analysis	Sample pretreatment, blank control, elemental analysis	Blank value, target-element limits, analytical method, and measured values

Publicly available industry materials indicate that the photovoltaic solar-cell field usually uses relatively lower grades; flat-panel displays and light-emitting diodes are often concentrated in middle grades; and the integrated-circuit field has higher purity requirements for wet electronic chemicals and is usually concentrated in higher grades.

Common general-purpose wet electronic chemicals in semiconductor manufacturing include hydrofluoric acid, sulfuric acid, phosphoric acid, hydrochloric acid, nitric acid, ammonia solution, hydrogen peroxide, and isopropanol. Functional wet electronic chemicals include etchants, cleaning solutions, electroplating solutions, and additives.

6. When should EL be selected, and when is UPSSS needed?

Selection of electronic-grade reagents should begin with the application scenario, contact object, contamination risk, target standard, and acceptance specifications.

6.1 Ordinary electronic cleaning or noncritical auxiliary steps

EL or UP is usually prioritized in these scenarios. The key points are:

1. Whether the assay or concentration is stable;

2. Whether basic metallic impurities meet the requirements;

3. Whether particle levels are acceptable;

4. Whether cost and supply are stable.

When the reagent does not directly contact high-value wafers, chips, or highly clean surfaces, directly selecting UPSS or UPSSS is usually unnecessary.

6.2 Photovoltaics, displays, light-emitting diodes, and general electronic components

UP or UPS is commonly selected in these scenarios. The key points are:

1. Individual metallic impurities;

2. Particle count;

3. Ionic residues;

4. Batch-to-batch stability;

5. Whether the reagent meets the required process documentation.

The grade may be raised for critical cleaning, etching, and surface-treatment steps, while noncritical pretreatment steps should be selected with cost considerations in mind.

6.3 Mature semiconductor processes and critical wet processes

UPS or UPSS is usually considered in these scenarios. The key points are:

1. Key metallic elements such as sodium, potassium, iron, and copper;

2. Controlled particle size and particle count;

3. Nonvolatile residue;

4. Total organic carbon;

5. Packaging cleanliness;

6. Target qualification or certification requirements.

When a specific grade, specific elemental limits, or a particular analytical method is explicitly required, the technical agreement should be followed.

6.4 Advanced processes, high-end wafer manufacturing, and ultra-low-blank analysis

UPSSS or customer-specific internal grades are more likely to be needed in these scenarios. The key points are:

1. Whether individual metallic impurity limits reach the 0.01 ppb level;

2. Whether the analytical method is sufficiently sensitive;

3. Whether the detection limit is lower than the target limit;

4. Whether the particle test conditions are clearly defined;

5. Whether the packaging material has low extractables;

6. Whether a Certificate of Analysis is provided for each batch;

7. Whether the supplier has long-term stable supply capability.

Application scenario	Grades that may be prioritized	Selection focus
Ordinary electronic cleaning	EL	Basic impurity control, cost, supply stability
General electronic components and printed circuit boards	EL / UP	Metallic impurities, particles, batch stability
Photovoltaics and some display processes	UP / UPS	Particles, metals, ionic residues
Mature semiconductor processes	UPS / UPSS	Metal ions, particles, packaging cleanliness
High-cleanliness wafer cleaning and critical wet processes	UPSS	Ultra-low metals, low particles, low residues
Advanced processes or special customer requirements	UPSSS or customer-specific internal grade	Customer agreement, detection limits, packaging and supply-chain qualification
High-end trace analysis	High-grade electronic grade or dedicated ultrapure grade	Blank value, target elements, analytical method, measured data

Electronic-grade reagents are not better simply because the grade is higher. Correct selection means matching the grade, specifications, process risk, target requirements, and cost.

7. Items in COA that are easily misread

First, do not look only at “pass.”

It is important to see how far the measured value is from the limit. If the measured value is consistently close to the limit, the quality margin is small.

Second, do not look only at metallic impurities.

Particles, nonvolatile residue, total organic carbon, anions, and packaging cleanliness may also affect performance.

Third, do not interpret “not detected” as “absent.”

“Not detected” only means that the analyte is below the detection limit of that method. If the detection limit is higher than the target requirement, “not detected” is not sufficiently informative.

Fourth, do not ignore the analytical method.

Low-ppb and ppt-level testing places high demands on instruments, containers, reagent blanks, the environment, and method validation. If the method is not appropriate, the data cannot adequately support a high-grade classification.

Fifth, do not look only at the grade name.

What truly determines usability is the product standard, measured data, analytical method, packaging conditions, and target technical agreement.

8. Why do products of the same grade vary so much in price?

Even if products are all labeled UP, UPS, or UPSS, prices can vary greatly among manufacturers. The difference usually does not lie in the label itself, but in raw materials, purification, testing, packaging, filling, and the quality system.

8.1 Different raw-material purity

High-grade products require raw materials with higher purity and greater consistency. The lower the levels of metals, particles, organics, water, and other impurities in the raw materials, the higher the procurement cost and the greater the supply difficulty.

8.2 Different purification processes

Electronic-grade reagents may require combinations of processes such as multistage distillation, sub-boiling distillation, ion exchange, membrane filtration, microporous filtration, and circulating purification. The higher the grade, the more complex the purification steps and the higher the requirements for equipment materials and process control.

8.3 Different testing capabilities

From 100 ppb to 0.01 ppb, analytical difficulty increases dramatically. Low-ppb and ppt-level testing depends not only on instruments, but also on the testing environment, container cleanliness, reagent blanks, sample pretreatment, and method validation. Testing capability itself is an important barrier for suppliers of high-grade reagents.

8.4 Different packaging materials

High-grade reagents cannot be packaged casually in ordinary containers. Packaging containers may leach metals, particles, or organic substances, causing contamination during storage and transportation. High-grade products usually require packaging systems with low extractables, corrosion resistance, high cleanliness, and good sealing performance.

8.5 Different filling environments

Filling in an ordinary environment can easily introduce particles and metallic contamination. High-grade reagents require clean filling environments, clean pipelines, final filtration, strict sealing, and controlled operations.

8.6 Different quality systems

High-end quality requirements demand more than one qualified batch; they require long-term consistency. Suppliers need capabilities in batch traceability, retained samples, change control, abnormality handling, audits, and continuous supply.

8.7 Different yields and losses

The higher the grade, the more likely even minor contamination during production can cause an entire batch to fail specifications. Production yield, testing cycle, release cycle, and quality risk for high-grade products are all reflected in the price.

Behind price differences among products of the same grade is usually a combined difference in raw materials, purification, testing, packaging, filling, quality systems, and supply stability.

9. Common misconceptions

9.1 Electronic-grade reagents are judged only by assay

Electronic-grade reagents cannot be judged only by assay. Assay determines basic performance, while metallic impurities, particles, ions, organic residues, nonvolatile residues, and packaging cleanliness determine contamination risk.

9.2 The higher the grade, the better

A higher grade means stricter cleanliness requirements, but it also means higher cost and greater requirements for storage, use, and qualification. Ordinary electronic cleaning applications may not need UPSSS. Advanced processes, critical wet processes, or ultra-low-blank analysis are more likely to require high-grade products.

9.3 Buying UPSSS means it will not be contaminated

Even high-grade reagents can still be secondarily contaminated if they are opened, dispensed, or poured in an ordinary environment, or if they pass through unclean pipelines, containers, or filters. High-grade products must be supported by proper storage, opening, transfer, and use methods.

9.4 EL, UP, and UPS can be directly equated with analytical grade or guaranteed reagent grade

They cannot be directly equated. Analytical grade and guaranteed reagent grade are mainly intended for general laboratory analysis and chemical use. EL, UP, UPS, UPSS, and UPSSS are intended for electronics manufacturing and high-cleanliness applications, with a focus on trace metals, particles, residues, and packaging cleanliness. The two systems focus on different requirements and cannot be simply converted.

9.5 High grade means low hazard

Grade represents cleanliness and impurity-control level; it does not mean low hazard. Reagents such as hydrofluoric acid, sulfuric acid, nitric acid, ammonia solution, and hydrogen peroxide still have their corresponding chemical hazards even when they meet high-grade electronic-grade requirements. They must be used according to the Safety Data Sheet and on-site safety procedures.

10. Selection Tables for Representative Electronic-Grade and Semiconductor-Grade Products: From Wet-Process Reagents and Clean Solvents to Lithography Materials, Deposition Precursors, and Functional Materials

Note: Tables 1–3 mainly cover wet electronic chemicals such as acids, bases, solvents, cleaning solutions, and developers. These products are directly related to the electronic-grade reagent grades discussed above, as well as metallic impurity, particle, and residue control. Tables 4–6 cover lithography materials, electronic specialty gases, deposition precursors, polymers, electrolytes, and functional materials. The evaluation priorities for these products are not exactly the same. In addition to cleanliness indicators such as low metals, low water, and low ions, they also need to be assessed according to their intended use, including lithographic performance, gas purity, volatility, thermal stability, molecular weight, formulation compatibility, or process compatibility.

Table 1 | Electronic/Semiconductor-Grade Organic Solvents and Lithography Formulation Solvents

Product Category	CAS No.	Aladdin Cat. No.	Name	Specification or Purity	Product Features and Applications
Ester solvent for lithography formulation	108-65-6	P299435	Propylene glycol monomethyl ether acetate (PMA)	PrimorTrace™ Ultra, electronic grade, ≥99.9999% metals basis	A commonly used solvent in photoresists and electronic coating systems. Its evaporation rate and solvency are suitable for spin-coating film formation, and the high-metal-purity grade can be used for high-cleanliness lithography formulations.
Ester solvent for lithography formulation	97-64-3	E1520801	Ethyl lactate (EL)	PrimorTrace™, electronic grade	An ester-type lithography solvent that can be used in photoresist formulations, edge bead removal, resin dissolution, and coating-solution adjustment, with good film-forming compatibility.
Ester formulation solvent	123-86-4	B1522436	Butyl acetate	USP, electronic grade, ≥99.5%	An ester solvent that provides both resin solvency and film-formation adjustment. It can be used in coating solutions, inks, cleaning agents, and electronic material formulations.
Glycol ether solvent for lithography formulation	107-98-2	M299436	1-Methoxy-2-propanol (PGME)	PrimorTrace™ Ultra, electronic grade, ≥99.9999% metals basis	A glycol ether solvent for lithography formulations. It can be used in resin, additive, and cleaning systems, and is suitable for combination with solvents such as propylene glycol monomethyl ether acetate to adjust evaporation and film formation.
Glycol ether formulation solvent	1569-02-4	E1522406	1-Ethoxy-2-propanol	USP, electronic grade, ≥99.5%	A glycol ether solvent with both solvency and evaporation-control capability. It can be used in coating formulations, electronic cleaning, and resin-system formulations.
Ketone solvent for photoresists	120-92-3	C1522445	Cyclopentanone	USP, electronic grade, ≥99.5%	A commonly used ketone solvent in photoresist and polymer systems, suitable for resin dissolution, spin-coating film formation, and electronic coating formulations.
Ketone resin solvent	108-94-1	C1522434	Cyclohexanone	USP, electronic grade, ≥99.5%	A ketone solvent with strong solvency, commonly used in resin, polymer, photoresist, and coating systems to adjust film formation and dissolution behavior.
Ketone formulation solvent	110-43-0	H1520803	2-Heptanone	PrimorTrace™, electronic grade	A ketone solvent with moderate volatility. It can be used for screening photoresist, resin, coating-solution, and electronic material formulations. The low-metal grade helps reduce background contamination in formulations.
Ketone developer/cleaning solvent	108-10-1	M1522409	4-Methyl-2-pentanone	USP, electronic grade, ≥99.5%	A ketone solvent that can be used in electron-beam resists, resin systems, and organic material formulations, as well as in developer, cleaning, and solvent-system screening.
High-boiling polar amide solvent	872-50-4	M103246	1-Methyl-2-pyrrolidinone	Electronic grade, ≥99.9%	A strongly polar, high-boiling solvent commonly used in polyimide precursors, conductive polymers, photoresist stripping solutions, and electronic material dissolution systems.
Polar amide solvent	68-12-2	D1522473	N,N-Dimethylformamide (DMF)	Electronic grade, UPS, ≥99.5%	A strongly polar amide solvent that can be used in electronic material synthesis, polymer dissolution, functional small-molecule formulation, and thin-film material preparation.
Highly polar sulfoxide solvent	67-68-5	D1522460	Dimethyl sulfoxide (DMSO)	Electronic grade, UPS, ≥99.5%	A highly polar, high-boiling solvent that can be used in stripping solutions, cleaning formulations, polymer dissolution, and electronic material synthesis systems.
High-boiling lactone solvent	96-48-0	H1520798	γ-Butyrolactone	PrimorTrace™, electronic grade	A high-boiling lactone solvent with solvency for various resins and polar materials. It can be used in photoresist, polyimide, stripping, and electronic coating systems.
Diol solvent/formulation aid	107-21-1	E1522420	Ethylene glycol	USP, electronic grade, ≥99.5%	A diol solvent and humectant component that can be used in electronic chemical formulations, wet-process treatment systems, dispersion systems, and viscosity adjustment.
Wafer cleaning/drying alcohol solvent	67-63-0	I419710	Isopropyl Alcohol (IPA)	PrimorTrace™, electronic grade, ≥99.999% metals basis	A commonly used rinsing, dehydration, and drying solvent in semiconductor and electronic cleaning. It can be used for surface treatment after cleaning wafers, glass, metals, and precision components.
Alcohol cleaning/rinsing solvent	64-17-5	E1498352	Ethanol	Electronic grade, total metal impurities ≤20 ppm, particles ≥0.5 μm: ≤25 per mL	A common cleaning, rinsing, and formulation solvent. The listed metallic impurity and particle specifications help illustrate the cleanliness requirements for electronic-grade solvents.
Alcohol cleaning/formulation solvent	67-56-1	M1522475	Methanol	Electronic grade, UPS, ≥99.5%	A small-molecule alcohol solvent commonly used for cleaning, rinsing, formulation, and sample pretreatment, suitable for systems requiring low residue and rapid evaporation.
Alcohol co-solvent	71-36-3	B1522458	n-Butanol (NBA)	Electronic grade, UPS, ≥99.5%	An alcohol solvent and co-solvent that can be used in cleaning solutions, coating liquids, resin formulations, and solvent evaporation-rate adjustment.
Polar nitrile solvent	75-05-8	A1522466	Acetonitrile (ACN)	Electronic grade, UPS, ≥99.5%	A polar nitrile solvent suitable for electronic material synthesis, precision cleaning, sample pretreatment, and low-residue solvent systems.
Nitrogen-containing basic solvent	110-86-1	P1522432	Pyridine	USP, electronic grade, ≥99.5%	A nitrogen-containing basic solvent and reagent that can be used in electronic material synthesis, ligand chemistry, functional small-molecule preparation, and adjustment of acidic components.
Polar ether solvent	123-91-1	D1522462	Dioxane	Electronic grade, UPS, ≥99.5%	A polar ether solvent that can be used in electronic material synthesis, resin dissolution, coating formulation, and organic-residue cleaning. The electronic-grade specification is suitable for systems concerned with metallic impurity and particle control.
Ether extraction/cleaning solvent	108-20-3	I1522414	Isopropyl ether	USP, electronic grade, ≥99.5%	A low-polarity ether solvent that can be used for organic-residue cleaning, extraction, hydrophobic material dissolution, and electronic material formulation adjustment.
Ether extraction/cleaning solvent	1634-04-4	B1522464	tert-Butyl methyl ether (MTBE)	Electronic grade, UPS, ≥99.5%	A low-polarity ether solvent that can be used for organic extraction, cleaning, and hydrophobic formulation systems. The electronic-grade specification helps reduce metallic background.
Aromatic ether solvent	100-66-3	A1522412	Anisole	USP, electronic grade, ≥99.5%	An aromatic ether solvent that can be used in organic semiconductor materials, conjugated polymers, photosensitive resins, and spin-coated thin-film preparation.
Chlorinated hydrocarbon solvent	67-66-3	C1522417	Chloroform	USP, electronic grade, ≥99.5%	A chlorinated hydrocarbon solvent commonly used for dissolving organic semiconductor materials, conjugated polymers, and hydrophobic resins. It can also be used in electronic material analysis and formulation research.
Chlorinated hydrocarbon solvent	75-09-2	C1522417	Dichloromethane	Electronic grade, UPS, ≥99.5%	A chlorinated hydrocarbon solvent with strong solvency. It can be used for organic material dissolution, extraction, cleaning, and pretreatment in electronic material synthesis.
Chlorinated cleaning solvent	156-60-5	T278880	Trans-1,2-Dichloroethylene	PrimorTrace™ Ultra, electronic grade, ≥99.999995% metals basis	A low-metal chlorinated cleaning solvent that can be used for precision cleaning, degreasing, and organic-residue removal, suitable for cleaning systems sensitive to metallic contamination.
Aromatic hydrocarbon solvent	1330-20-7	X1522441	Xylene	USP, electronic grade, ≥99.5%	An aromatic hydrocarbon solvent that can be used for dissolving resins, coatings, polymers, and organic electronic materials, and is also suitable for some hydrophobic cleaning systems.
Semiconductor-grade aromatic hydrocarbon solvent	108-88-3	T399681	Toluene	Semiconductor grade, ≥99%	An aromatic hydrocarbon solvent that can be used for dissolving organic electronic materials, resins, coatings, and hydrophobic polymers. The semiconductor-grade specification is suitable for clean formulation scenarios.
Nonpolar hydrocarbon cleaning solvent	110-54-3	H1522443	n-Hexane	USP, electronic grade, ≥99.5%	A nonpolar hydrocarbon solvent that can be used for cleaning oils, waxes, and hydrophobic contaminants, and also for electronic material extraction and nonpolar formulation systems.
Nonpolar hydrocarbon cleaning solvent	142-82-5	H1522469	Heptane	Electronic grade, UPS, ≥99.5%	A nonpolar hydrocarbon solvent with slower evaporation than n-hexane. It can be used for precision cleaning, hydrophobic-residue removal, and organic material formulation screening.
Cycloalkane solvent	110-82-7	C1522430	Cyclohexane	USP, electronic grade, ≥99.5%	A cycloalkane solvent that can be used for dissolving nonpolar organic substances, electronic material extraction, degreasing cleaning, and hydrophobic formulation systems.
Nonpolar hydrocarbon solvent	111-65-9	O431477	Octane	Electronic grade, ≥99%, ≥99.999% metals basis	A high-purity nonpolar hydrocarbon solvent that can be used for hydrophobic electronic material dissolution, cleaning, extraction, and low-metal-background formulation research.

Table 2 | Electronic-Grade Acids, Bases, and Basic Wet-Process Reagents

Product Category	CAS No.	Aladdin Cat. No.	Name	Specification or Purity	Product Features and Applications
Organic acid wet-process reagent	64-19-7	A116171	Acetic acid	Moligand™, electronic grade, ≥99.7%	A weakly acidic wet-process reagent that can be used in acidic formulations, metal surface treatment, buffer systems, and electronic material cleaning formulation adjustment.
Silicon oxide etching acid	7664-39-3	H116237	Hydrofluoric acid	PrimorTrace™ Ultra, electronic grade, ≥99.99998% metals basis, 49 wt.% in H2O	A critical wet etching and cleaning acid used for silicon oxide removal, silicon wafer surface treatment, and fluoride cleaning systems. The low-metal specification helps control wafer contamination.
Fluoride etching reagent	12125-01-8	A111760	Ammonium fluoride	Electronic grade, 40% solution	A fluoride wet-process reagent that can be combined with hydrofluoric acid and other components to form silicon oxide etching or buffered etching systems for treating oxide layers on wafer surfaces.
Strong acid for metallic contamination removal	7647-01-0	H1520896	Hydrochloric acid	Electronic grade, UPSS	A high-cleanliness strong acid that can be used for metal ion removal, acid washing, wafer cleaning, and contamination control in semiconductor wet processes.
Oxidizing strong acid	7697-37-2	N116243	Nitric acid	Electronic grade, ≥70%	A strongly oxidizing acid that can be used for metal surface treatment, oxidative cleaning, wet etching formulations, and pretreatment of high-purity inorganic materials.
Integrated-circuit-grade phosphoric acid etchant	7664-38-2	P1507270	Phosphoric acid	Electronic grade, IC grade	An integrated-circuit-grade acidic wet-process reagent commonly used for silicon nitride etching, surface treatment, and high-cleanliness acidic process systems.
Lithography developer base	75-59-2	T1492629	Tetramethylammonium hydroxide (TMAH)	Electronic grade, UPSS, 2.38% aqueous solution	A 2.38% aqueous solution is a commonly used developer concentration for positive photoresists. It can be used to evaluate development rate, resist residue control, and high-cleanliness developing systems.
Strong alkaline wet-process reagent	1310-73-2	S163080	Sodium hydroxide	Electronic grade, ≥99.9% metals basis	A strong alkaline wet-process reagent that can be used in alkaline cleaning, surface treatment, formulation adjustment, and inorganic contamination removal systems.
Strong alkali for silicon etching	1310-58-3	P112287	Potassium hydroxide	Electronic grade, ≥99.999% metals basis, excludes sodium content	A strong alkaline reagent that can be used for anisotropic silicon etching, alkaline cleaning, and developer-related formulations. The specification notes that sodium content is excluded from the metals-basis purity calculation.
Alkaline cleaning reagent	1336-21-6	A112083	Ammonia solution	Electronic grade, ≥28% NH3 in H2O	An alkaline cleaning component that can be used in ammonia–hydrogen peroxide systems, particle removal, surface activation, and wet-process cleaning formulations.

Table 3 | Dedicated Developer, Etching, Cleaning, and Electroplating Process Liquids

Product Category	CAS No.	Aladdin Cat. No.	Name	Specification or Purity	Product Features and Applications
Developer process liquid	—	D1511718	DeveloperNMD-3	Electronic grade	A dedicated developer process liquid that can be used in photoresist development and pattern transfer, suitable for evaluating development rate, linewidth control, and residue.
Alkaline developer/silicon treatment liquid	1310-58-3	P1492633	Potassium hydroxide developer solution	Electronic grade	An alkaline developer or wet-process treatment liquid that can be used for specific photoresist systems, silicon material treatment, and alkaline process-condition screening.
Aluminum etchant	—	A1511715	Aluminum Etchant	Electronic grade	A formulated aluminum etchant that can be used for aluminum thin-film patterning, metal-layer wet etching, and microfabrication experiments for electronic devices.
Semiconductor cleaning agent	—	A1511198	Ala-1511198 Semiconductor cleaning agent	Semiconductor grade, total metal impurities ≤2 ppm, particles ≥0.5 μm: ≤25 per mL	A semiconductor-grade cleaning agent with stated total metallic impurity and particle specifications. It is suitable for general electronic cleaning, formulation, or R&D evaluation. For critical wafer cleaning, advanced processes, or ultra-low-blank analysis, it should be further qualified based on measured values of target elements, particles, and residues.
Copper electroplating process liquid	—	H475915	High speed bright copper electroplating solution	Semiconductor grade	A copper electroplating process liquid that can be used for high-brightness copper deposition, interconnect metallization, electroplating fill, and electronic packaging-related process research.

Table 4 | Photoresist/Photosensitive Material Monomers, Photoacid Generators, and Functional Additives

Product Category	CAS No.	Aladdin Cat. No.	Name	Specification or Purity	Product Features and Applications
Acidic small molecule/resin modifier	595-46-0	D684752	Dimethylmalonic acid	Electronic grade	A small molecule containing two carboxyl groups, usable in electronic material resin modification, acidic functional components, formulation additives, or organic material intermediate screening.
Aromatic diamine functional additive	3102-87-2	T476349	2,3,5,6-Tetramethyl-p-phenylenediamine	Electronic grade, ≥99% metals basis	An aromatic diamine electron-donor structure that can be used in electronic material synthesis, redox systems, photosensitive formulations, and functional additive research.
Biphenol crosslinking/resin monomer	455943-61-0	T1507094	3,3′,5,5′-Tetrakis(MethoxyMethyl)-[1,1′-biphenyl]-4,4′-diol (TMOM-BP)	Electronic grade, ≥98%	Contains phenolic hydroxyl and methoxymethyl structures. It can be used in photoresist resins, crosslinking systems, thermally acid-responsive materials, and electronic coating formulation research.
Acrylamide functional monomer	5117-12-4	A299430	4-Acryloylmorpholine	PrimorTrace™ Ultra, electronic grade, ≥99.9999% metals basis	An acrylamide functional monomer that can be used in UV-curable materials, photoresist resins, hydrophilic modified polymers, and low-metal electronic material formulations.
Fluorinated methacrylate monomer	352-87-4	T299433	2,2,2-Trifluoroethyl methacrylate	PrimorTrace™ Ultra, electronic grade, ≥99.9999% metals basis	A fluorinated methacrylate monomer that can be used in low-surface-energy resins, fluorinated photoresists, electronic coatings, and etch-resistant polymer material research.
Sulfonate photoacid generator	307531-76-6	N476346	N-Hydroxy-5-norbornene-2,3-dicarboximide perfluoro-1-butanesulfonate	Electronic grade, ≥99% metals basis	A sulfonate-type photoacid generator that can be used in chemically amplified photoresist systems, suitable for studying acid generation efficiency, exposure response, and pattern formation.
Sulfonium salt photoacid generator	134708-14-8	T476344	Tris(4-tert-butylphenyl)sulfonium triflate	Electronic grade, ≥99% metals basis	A triarylsulfonium salt photoacid generator that can be used in photoresists and cationic photocuring systems, suitable for studying acid diffusion, sensitivity, and resin deprotection reactions.
Fluorinated sulfonium salt photoacid generator	241806-75-7	T476345	Tris(4-tert-butylphenyl)sulfonium perfluoro-1-butanesulfonate	Electronic grade, ≥99% metals basis	A perfluorobutanesulfonate-type photoacid generator that can be used in chemically amplified photoresists, suitable for adjusting acid strength, hydrophobicity, and pattern-edge control.
Sulfonium salt photoacid/cationic initiator	437-13-8	T299434	Triphenylsulfonium Tetrafluoroborate	PrimorTrace™ Ultra, electronic grade, ≥99.9999% metals basis	A triphenylsulfonium salt photoacid or cationic photoinitiator. The high-metal-purity specification is suitable for high-cleanliness photosensitive materials and electronic coating research.
Iodonium salt photoacid generator	131717-99-2	B476343	Bis(4-tert-butylphenyl)iodonium p-toluenesulfonate	Electronic grade, ≥99% metals basis	A diaryliodonium salt photoacid generator that can be used in photoresists, cationic photocuring, and photosensitive resin formulations.
Fluorinated iodonium salt photoacid generator	194999-85-4	B476350	Bis(4-tert-butylphenyl)iodonium perfluoro-1-butanesulfonate	Electronic grade, ≥99%	A perfluorobutanesulfonate-type iodonium photoacid generator that can be used to increase photoacid strength and adjust photoresist development, deprotection, and pattern stability.

Table 5 | Electronic Specialty Gases and Deposition/Epitaxy Precursors

Product Category	CAS No.	Aladdin Cat. No.	Name	Specification or Purity	Product Features and Applications
Unsaturated hydrocarbon gas-phase feedstock	590-19-2	B693475	1,2-BUTADIENE	Electronic grade, ≥99.5%	An electronic-grade unsaturated hydrocarbon gas-phase feedstock that can be used in gas-phase reactions, carbon-source screening, specialty polymers, and electronic material-related research.
Boron-source electronic specialty gas	14452-61-0	D1068329	Diboron	Electronic grade, ≥99.99%, diborane only, 9–11% (balance hydrogen), 10% in hydrogen	A boron-containing electronic specialty gas that can be used for boron doping, borosilicate glass, boron-containing film deposition, and semiconductor gas-phase processes.
Silicon-source electronic specialty gas	1590-87-0	D476340	Disilane	Electronic grade	A highly reactive silicon-source gas that can be used in silicon epitaxy, polysilicon, silicon-germanium materials, and low-temperature chemical vapor deposition processes.
Silicon-source organometallic precursor	15112-89-7	T476356	Tris(dimethylamino)silane	PrimorTrace™, electronic grade, ≥99.999% metals basis	An organosilicon precursor that can be used for silicon oxide, silicon nitride, or silicon-containing thin-film deposition, suitable for low-temperature thin films and atomic layer deposition process research.
Gallium-source organometallic precursor	1445-79-0	T283549	Trimethylgallium, elec. gr.	PrimorTrace™ Ultra, electronic grade, ≥99.9999% metals basis	An organogallium epitaxy precursor that can be used to prepare compound semiconductor materials such as gallium nitride, gallium arsenide, and gallium phosphide, as well as light-emitting diode and power-device materials.
Arsenic-source organometallic precursor	593-88-4	T283548	Trimethylarsine, elec. gr.	Electronic grade, ≥99.995% metals basis	An organoarsenic epitaxy precursor that can be used to prepare III–V semiconductor materials such as gallium arsenide and indium arsenide, and for metal-organic vapor phase epitaxy research.
Tantalum organometallic precursor	511292-99-2	T476342	Tris(ethylmethylamido)(tert-butylimido)tantalum(V)	Electronic grade, ≥95%, ≥99.99% metals basis	An organotantalum precursor that can be used for deposition of tantalum, tantalum nitride, or tantalum oxide films, suitable for diffusion barriers, high-k materials, and metallization process research.
Zirconium alkoxide precursor	2081-12-1	Z432313	Zirconium(IV) tert-butoxide	PrimorTrace™, electronic grade, ≥99.999% metals basis	A zirconium alkoxide precursor that can be used in zirconia thin films, ceramic precursors, sol-gel processes, and high-k material research.
Zirconium amide precursor	19756-04-8	T432279	Tetrakis(dimethylamido)zirconium(IV)	PrimorTrace™, electronic grade, ≥99.99% metals basis	An organozirconium thin-film precursor that can be used for atomic layer deposition or chemical vapor deposition of zirconia and zirconium-containing high-k films.
Germanium fluoride gas-phase precursor	7783-58-6	G476353	Germanium(IV) fluoride	Electronic grade, ≥99.9%	A germanium-containing fluoride precursor that can be used in germanium-containing material preparation, gas-phase reactions, optical materials, and semiconductor-related thin-film research.

Table 6 | Polymers, Inorganic Materials, Electrolytes, and Functional Additives

Product Category	CAS No.	Aladdin Cat. No.	Name	Specification or Purity	Product Features and Applications
Conductive polymer monomer	126213-50-1	E1520163	3,4-Ethylenedioxythiophene (EDOT)	Electronic grade, ≥99.9%, water ≤0.1%	A conductive polymer monomer that can be used to prepare poly(3,4-ethylenedioxythiophene), suitable for transparent conductive coatings, antistatic layers, organic electronics, and electrochemical device research.
Conjugated conductive polymer	104934-51-2	P431320	P3OT	Electronic grade, ≥99.995% metals basis, regioregular, average Mn ~25,000	A regioregular polythiophene conjugated polymer that can be used in organic semiconductors, conductive films, thin-film transistors, and optoelectronic device materials.
Conjugated polymer	137191-59-4	P432006	Poly(3-dodecylthiophene-2,5-diyl)	Electronic grade, ≥99.995% metals basis, average Mw ~27,000	An alkyl-substituted polythiophene conjugated polymer that can be used in organic semiconductor films, flexible electronics, optoelectronic devices, and conductive coating research.
Polyimide precursor	29319-22-0	P432551	Poly(3,3′,4,4′-biphenyltetracarboxylic dianhydride-co-1,4-phenylenediamine), amic acid solution	Electronic grade, 9.5–11.5 wt.% in 1-methyl-2-pyrrolidinone	A polyimide precursor solution that can be used to prepare heat-resistant insulating films, flexible electronic substrates, passivation layers, and electronic packaging materials.
Polyimide precursor coating solution	—	P485973	Poly(pyromellitic dianhydride-co-4,4′-oxydianiline), amic acid solution	Viscosity 5–7 poise, electronic grade, 13 wt.% in 80% NMP/20% xylene	A directly coatable polyimide precursor solution suitable for preparing flexible insulating films, heat-resistant protective layers, passivation layers, and electronic packaging materials.
Lithium battery electrolyte salt	21324-40-3	L777368	Lithium Hexafluorophosphate	Electronic grade, ≥99.99% trace metals basis	A core lithium salt for lithium-ion battery electrolytes, suitable for preparing high-purity electrolytes and requiring close control of water, acidic impurities, and trace metals.
Carbonate electrolyte solvent	96-49-1	E777011	Ethylene carbonate	Electronic grade, ≥99%	A carbonate solvent with a high dielectric constant that can be used in lithium battery electrolytes, ion-conducting systems, and high-purity electrochemical material research.
Organophosphate electrolyte/flame-retardant additive	512-56-1	T278892	Trimethyl phosphate (TMP)	PrimorTrace™ Ultra, electronic grade, ≥99.99999% metals basis	A high-purity organophosphate that can be used as an electrolyte additive, flame-retardant solvent, electronic material formulation component, and in low-metal electrochemical systems.
Buffer base/low-metal buffer	77-86-1	T1372375	Tris(hydroxymethyl)aminomethane (TRIS, Trometamol)	Electronic grade, ≥99.999% metals basis	A high-purity buffer base that can be used for acid-base adjustment in electronic chemical formulations, low-metal buffer systems, and surface treatment research.
Metal ion chelator	85715-60-2	E1522386	Ethylenediaminetetraacetic Acid Trisodium Salt Hydrate	USP, electronic grade, ≥99.5%	A chelating-agent sodium salt that can complex metal ions and be used in cleaning solutions, wet-process formulations, metallic contamination control, and stabilization of aqueous systems.
Potassium-salt chelator	65501-24-8	E1522396	Ethylenediaminetetraacetic acid tripotassium salt dihydrate	USP, electronic grade, ≥99.5%	A potassium-salt chelator that can be used in cleaning, complexation, and formulation designs where intentional introduction of sodium salts needs to be avoided. For processes sensitive to mobile ions, potassium ion and sodium impurity limits should also be monitored.
Metal ion chelator	25102-12-9	E1522403	Ethylenediaminetetraacetic acid dipotassium salt dihydrate	USP, electronic grade, ≥99.5%	A dipotassium-type chelator that can be used for metal ion control, electronic cleaning formulations, and complexation adjustment in buffer systems.
Ammonium-salt chelator	304675-80-7	D1522400	Diammonium Ethylenediaminetetraacetate Monohydrate (EDTA diammonium salt hydrate)	USP, electronic grade, ≥99.5%	An ammonium-salt chelator that can be used in cleaning and complexation systems requiring reduced introduction of metal cations, suitable for metallic contamination control formulations.
Chelator for alkaline systems	13235-36-4	T1522383	Tetrasodium Ethylenediaminetetraacetate Tetrahydrate	Electronic grade, UPS, ≥99.5%	A highly soluble tetrasodium chelator that can be used in alkaline cleaning solutions, metal ion complexation, and stabilization of electronic chemical formulations.
Antimicrobial preservative additive	26172-55-4 / 2682-20-4	C778427	CMIT/MIT	Electronic grade, 10–12% in PG solvent	An isothiazolinone preservative component that can be used for microbial control in aqueous electronic chemicals, cleaning solutions, or functional formulations.
Complexing/functional organic acid	69-72-7	S1507096	Salicylic acid	Electronic grade, Moligand™, ≥99.5%	Contains a hydroxycarboxylic acid structure and can be used in complexation, surface treatment, electronic chemical additives, and functional organic material synthesis research.
Pyrophosphate complexing agent/electroplating additive	7320-34-5	P1458028	Potassium pyrophospate (TKPP)	Electronic grade, ≥99.5%	A pyrophosphate complexing agent that can be used in metal electroplating, cleaning formulations, buffer systems, and metal ion stabilization.
High-purity aluminum source/Lewis acid	7446-70-0	A278954	Aluminum chloride	PrimorTrace™, electronic grade, ≥99.999% metals basis	A high-purity aluminum source and Lewis acid that can be used in inorganic material synthesis, electronic material preparation, catalytic systems, and metal-source research.
High-purity metal material	7439-97-6	M433427	Mercury	PrimorTrace™ Ultra, electronic grade, ≥99.9999% metals basis	High-purity metallic mercury that can be used in high-purity metal material research, analytical calibration, and special electrochemical or materials experiments. Safety and waste disposal must be strictly controlled during use.
High-purity oxide material	1313-96-8	N108410	Niobium pentaoxide	Electronic grade, ≥99.98% metals basis	A high-purity niobium oxide that can be used in dielectric ceramics, optical materials, functional oxides, thin-film materials, and electronic ceramic research.
High-purity potassium salt/oxidizing salt	7757-79-1	P1511616	Potassium nitrate	Electronic grade, ≥99.999% metals basis	A high-purity potassium salt and oxidizing salt that can be used in electronic ceramics, glass ion exchange, inorganic material preparation, and high-cleanliness potassium-source systems.
High-purity iodide salt	7681-11-0	P1511709	Potassium iodide	Electronic grade, ≥99.5%	A high-purity iodide salt that can be used in electrochemical systems, metal etching formulations, iodine sources, and electronic material synthesis research.
Barium source for electronic ceramics	513-77-9	B1519978	Barium carbonate	Electronic grade, ≥99.8% metals basis	A high-purity barium source that can be used in barium titanate-based dielectric ceramics, electronic ceramics, functional oxides, and inorganic material preparation.
Strontium source for electronic ceramics	1633-05-2	S102043	Strontium Carbonate	Electronic grade, ≥99.5%, 0–1 μm	A high-purity strontium source with a particle-size range suitable for ceramic batching. It can be used in strontium titanate, barium strontium titanate, and electronic ceramic material research.
Nano-oxide functional material	13463-67-7	N1519826	Nano Titanium oxide	Electronic grade, ≥99.8% metals basis, 300–700 nm	A high-purity nano-oxide that can be used in dielectric materials, optoelectronic materials, electronic ceramics, functional coatings, and inorganic filler systems.
High-purity aluminum salt	7784-31-8	A1511301	Aluminum sulfate octadecahydrate	Semiconductor grade, ≥99.9999% metals basis	A high-purity aluminum salt that can be used as an inorganic aluminum source, raw material for electronic chemical formulations, or raw material for preparing functional inorganic materials. The semiconductor-grade specification helps control trace impurities.

Note: The products above are representative Aladdin products. For additional product specifications, search by “product name/CAS/catalog number” on the Aladdin website.

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